TS865C10R

TS865C10R (100V/20A) Low IR Schottky barrier diode 10 +0.5 [200509] Outline drawings, mm 0.9 ±0.3 4.5 ±0.2 1.32 Low IR Low VF Center tap connection 1.5 Max 9.3 ±0.5 Features 1.2 ±0.2 5.08 0.8 —0.1 2.7 +0.2 0.4 +0.2 Applications High frequency operation DC-DC converters AC adapter 1. Gate 2, 4. Drain 3. Source Package : T-pack Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current non-repetitive reverse surge power dissipation Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 100 100 Unit V V V * A A W °C °C Terminals-to-Case, AC.1min. Square wave, duty=1/2 Tc=117°C 1500 20 145 660 +150 -40 to +150 Sine wave 10ms tw=10µs, Tj=25°C Operating junction temperature Storage temperature * Out put current of center tap full wave connection Electrical characteristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=100V Junction to case Max. 0.86 175 1.75 Unit V µA °C/W **Rating per element Mechanical characteristics Mounting torque Approximate mass http://www.fujielectric.co.jp/fdt/scd/ Recommended torque 0.3 to 0.5 2 N·m g 3.0 ±0.3 (100V / 20A ) Characteristics Forward Characteristic (typ.) 10 1 TS865C10R (20A) Reverse Characteristic (typ.) Tj=150 C Tj=125 C Tj=100 C o o o IF Forward Current (A) IR Reverse Current (mA) 10 Tj=150 C Tj=125 C o Tj=100 C Tj=25 C 1 o o o 10 0 10 -1 Tj= 25 C 10 -2 o 10 -3 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 -4 0 10 20 30 40 50 60 70 80 90 100 110 120 VF Forward Voltage (V) VR Reverse Voltage (V) 16 14 Forward Power Dissipation (max.) 8 Io Reverse Power Dissipation (max.) 360 º λ PR Reverse Power Dissipation (W) WF Forward Power Dissipation (W) 12 10 360 º 6 VR Square wave λ=60 o α Square wave λ=120 o Sine wave λ=180 o 8 Square wave λ=180 DC 6 4 2 o 4 α=180 o 2 Per 1element 0 0 2 4 6 8 10 12 0 0 20 Io Average Output Current (A) VR Reverse Voltage (V) 160 Current Derating (Io-Tc) (max.) Junction Capacitance Characteristic (max.) 1000 150 TC Case Temperature ( C) 140 130 DC 120 360 º Junction Capacitance (pF) o 100 Sine wave λ=180 o o Square wave λ=180 Square wave λ=120 110 o λ 90 0 5 10 15 20 25 30 λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 543210987654321 543210987654321 543210987654321 543210987654321 100 Io Square wave λ=60 o VR=50V Cj 10 1 10 100 1000 Io Average Output Current (A) VR 4321 4321 4321 4321 4321 4321 4321 4321 40 60 80 100 4321 4321 4321 4321 4321 4321 4321 4321 543210987654321 543210987654321 543210987654321 543210987654321 DC 120 Reverse Voltage (V) (100V / 20A ) TS865C10R (20A) 1000 Surge Capability (max.) I FSM Peak Half - Wave Current (A) 100 10 1 10 100 Number of Cycles at 50Hz Surge Current Ratings (max.) 1000 IFSM PeakHAlf-WaveCurrent (A) 100 10 1 10 100 1000 tTime (ms) Sinewave 10 1 Transient Thermal Impedance (max.) (°C/W) Rth(j-c):1.75°C/W Transient Thermal Impedance 10 0 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) http://www.fujielectric.co.jp/fdt/scd/