TS868C04R

TS868C04R (45V/30A) Low IR Schottky barrier diode 10 +0.5 [200509] Outline drawings, mm 0.9 ±0.3 4.5 ±0.2 1.32 Low IR Low VF Center tap connection 1.5 Max 9.3 ±0.5 Features 1.2 ±0.2 5.08 0.8 —0.1 2.7 +0.2 0.4 +0.2 Applications High frequency operation DC-DC converters AC adapter 1. Gate 2, 4. Drain 3. Source Package : T-pack Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current non-repetitive reverse surge power dissipation Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 45 45 Unit V V V * A A W °C °C Terminals-to-Case, AC.1min. Square wave, duty=1/2 Tc=122°C 1500 30 160 1000 +150 -40 to +150 Sine wave 10ms tw=10µs, Tj=25°C Operating junction temperature Storage temperature * Out put current of center tap full wave connection Electrical characteristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=15A VR=40V Junction to case Max. 0.63 200 1.25 Unit V µA °C/W **Rating per element Mechanical characteristics Mounting torque Approximate mass http://www.fujielectric.co.jp/fdt/scd/ Recommended torque 0.3 to 0.5 2 N·m g 3.0 ±0.3 (45V / 30A ) Characteristics Forward Characteristic (typ.) 10 1 TS868C04R (30A) Reverse Characteristic (typ.) Tj=150 C Tj=125 C Tj=100 C o o o 10 IF Forward Current (A) IR Reverse Current (mA) Tj=150 C 1 Tj=125 C o Tj=100 C Tj=25 C 0.1 o o o 10 0 10 -1 Tj= 25 C o 10 -2 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 -3 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) 24 22 Forward Power Dissipation (max.) 5 Io Reverse Power Dissipation (max.) 360 º λ PR Reverse Power Dissipation (W) WF Forward Power Dissipation (W) 20 18 4 VR 360 º 16 Square wave λ=60o o 14 Square wave λ=120 Sine wave λ=180 12 Square wave λ=180o DC 10 8 6 4 2 Per 1element 0 0 2 4 6 8 10 12 14 16 18 o 3 2 1 0 0 Io Average Output Current (A) Current Derating (Io-Tc) (max.) 150 Junction Capacitance Characteristic (max.) 1000 Tc Case Temperature ( C) 140 130 DC Square wave λ=180 Sine wave λ=180 360 º o o o Junction Capacitance (pF) o 100 120 Square wave λ=120 110 λ 100 VR=20V Square wave λ=60 o Cj 90 0 λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 543210987654321 543210987654321 543210987654321 Io 10 5 10 15 20 25 30 35 40 45 1 Io Average Output Current (A) 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 4321 α 10 20 30 40 543210987654321 543210987654321 543210987654321 DC α=180 o 50 60 VR Reverse Voltage (V) 10 100 1000 VR Reverse Voltage (V) (45V / 30A ) TS868C04R (30A) 1000 Surge Capability (max.) I FSM Peak Half - Wave Current (A) 100 10 1 10 100 Number of Cycles at 50Hz Surge Current Ratings (max.) 1000 IFSM PeakHAlf-WaveCurrent (A) 100 10 1 10 100 1000 tTime (ms) Sinewave 10 1 Transient Thermal Impedance (max.) (°C/W) Rth(j-c):1.25°C/W Transient Thermal Impedance 10 0 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) http://www.fujielectric.co.jp/fdt/scd/