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TS868C06R

TS868C06R

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    TS868C06R - Low IR Schottky barrier diode - Fuji Electric

  • 数据手册
  • 价格&库存
TS868C06R 数据手册
TS868C06R (60V/30A) Low IR Schottky barrier diode 10 +0.5 [200509] Outline drawings, mm 0.9 ±0.3 4.5 ±0.2 1.32 Low IR Low VF Center tap connection 1.5 Max 9.3 ±0.5 Features 1.2 ±0.2 5.08 0.8 —0.1 2.7 +0.2 0.4 +0.2 Applications High frequency operation DC-DC converters AC adapter 1. Gate 2, 4. Drain 3. Source Package : T-pack Epoxy resin UL : V-0 Connection diagram 1 2 3 Maximum ratings and characteristics Maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average output current Non-repetitive surge current non-repetitive reverse surge power dissipation Symbol VRSM VRRM Viso Io IFSM PRM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 60 60 Unit V V V * A A W °C °C Terminals-to-Case, AC.1min. Square wave, duty=1/2 Tc=119°C 1500 30 160 750 +150 -40 to +150 Sine wave 10ms tw=10µs, Tj=25°C Operating junction temperature Storage temperature * Out put current of center tap full wave connection Electrical characteristics (at Ta=25°C Unless otherwise specified ) Item Forward voltage ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=15A VR=60V Junction to case Max. 0.74 200 1.25 Unit V µA °C/W **Rating per element Mechanical characteristics Mounting torque Approximate mass http://www.fujielectric.co.jp/fdt/scd/ Recommended torque 0.3 to 0.5 2 N·m g 3.0 ±0.3 (60V / 30A ) Characteristics Forward Characteristic (typ.) TS868C06R (30A) Reverse Characteristic (typ.) Tj=150 C Tj=125 C o o 10 10 1 Tj=100 C o IF Forward Current (A) IR Reverse Current (mA) Tj=150 C 1 Tj=125 C o Tj=100 C o Tj=25 C o o 10 0 10 -1 Tj= 25 C o 0.1 10 -2 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -3 0 10 20 30 40 50 60 70 80 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation (max.) 24 7 Io Reverse Power Dissipation (max.) 360 º DC λ PR Reverse Power Dissipation (W) WF Forward Power Dissipation (W) 20 18 16 6 VR 5 360 º o Square wave λ=60 o 14 Square wave λ=120 o Sine wave λ=180 12 o Square wave λ=180 DC 10 8 6 4 2 0 0 2 4 6 8 10 12 Per 1element 14 16 18 α 4 α=180 o 3 2 1 0 0 10 20 Io Average Output Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) (max.) 150 Junction Capacitance Characteristic (max.) 1000 140 Tc Case Temperature ( C) 130 DC 120 360 º Junction Capacitance (pF) o Square wave λ=180 o Sine wave λ=180 o 100 110 Square wave λ=120 o λ 100 Square wave λ=60 o VR=30V Cj 90 0 λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 543210987654321 543210987654321 543210987654321 543210987654321 Io 10 5 10 15 20 25 30 35 40 45 1 Io Average Output Current (A) VR 4321 4321 4321 4321 4321 4321 4321 4321 30 40 50 60 4321 432 4321 4321 4321 4321 4321 1 4321 543210987654321 543210987654321 543210987654321 543210987654321 22 70 80 10 100 1000 Reverse Voltage (V) (60V / 30A ) TS868C06R (30A) Surge Capability (max.) 1000 I FSM Peak Half - Wave Current (A) 100 10 1 10 100 Number of Cycles at 50Hz Surge Current Ratings (max.) 1000 IFSM PeakHAlf-WaveCurrent (A) 100 10 1 10 100 1000 tTime (ms) Sinewave 10 1 Transient Thermal Impedance (max.) (°C/W) Rth(j-c):1.25°C/W Transient Thermal Impedance 10 0 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec) http://www.fujielectric.co.jp/fdt/scd/
TS868C06R 价格&库存

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