TS868C12R

TS868C12R Major characteristics VRRM VF IO 120 0.88 30 V V A (30A) (120V / 30A ) [0402] High Voltage Schottky barrier diode Outline drawings, mm 0.9 ±0.3 10 +0.5 Characteristics TS868C12R Units Condition Tc=25°C MAX. 1.2 ±0.2 5.08 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 0.8 —0.1 2.7 +0.2 0.4 +0.2 1. Gate 2, 4. Drain 3. Source Features Low VF High Voltage Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : T-pack Epoxy resin UL : V-0 Connection diagram Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Average output current Non-repetitive surge current ** Operating junction temperature Storage temperature Symbol VRSM VRRM Io IFSM Tj Tstg Square wave, duty=1/2 Tc=121°C Sine wave 10ms 1shot Conditions tw=500ns, duty=1/40 1 2 3 Rating 120 120 30 * 225 +150 -40 to +150 Unit V V A A °C °C * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IFM=10A VR=VRRM Junction to case Max. 0.88 200 1.0 Unit V µA °C/W Mechanical characteristics Approximate mass 2 g 3.0 ±0.3 (120V / 30A ) Characteristics Forward Characteristic (typ.) TS868C12R (30A) Reverse Characteristic (typ.) Tj=150°C 10 1 Tj=125°C (A) (mA) 10 Tj=150°C Tj=125°C Tj=100°C 1 Tj=25°C 10 0 Forward Current Tj=100°C Reverse Current 10 -1 Tj= 25°C 10 -2 IF 0.1 IR 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 -3 0 10 20 30 40 50 60 70 80 90 100 110 120 130 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation (max.) 8 22 Io Reverse Power Dissipation (max.) DC 360° (W) 18 λ 360° (W) 20 Forward Power Dissipation Reverse Power Dissipation 6 VR α 16 14 12 Square wave λ =60° Square wave λ =120° Sine wave λ =180° Square wave λ =180° 10 DC 8 6 4 α =180° 4 2 WF 2 Per 1element 0 0 2 4 6 8 10 12 14 16 18 PR 0 0 20 40 60 80 100 120 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) (max.) 150 Junction Capacitance Characteristic (max.) 1000 Case Temperature (°C) 140 130 DC Sine wave λ =180° Square wave λ =180° 360° λ Io Junction Capacitance (pF) Cj 100 120 Square wave λ =120° VR=60V 110 Tc Square wave λ =60° 100 0 5 10 15 20 25 30 35 40 45 10 1 10 100 1000 Io Average Output Current (A) λ :Conduction angle of forward current for each rectifier element VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (120V / 30A ) Surge Capability (max.) 1000 1000 TS868C12R (30A) Surge Current Ratings (max.) (A) IFSM PeakHAlf-WaveCurrent (A) Peak Half - Wave Current 100 100 I FSM 10 1 10 100 10 1 10 100 1000 Number of Cycles at 50Hz tTime (ms) Sinewave Transient Thermal Impedance (max.) 10 1 (°C/W) Rth(j-c):1.0°C/W 10 0 Transient Thermal Impedance 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec)