FHX05LG

FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available DESCRIPTION The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Symbol VDS VGS Pt* Tstg Tch Rating 3.5 -3.0 180 -65 to +175 175 Unit V V mW °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V, IDS =1mA IGS = -10µA Min. 15 35 -0.2 -3.0 9.5 9.5 9.5 Limit Typ. Max. 30 60 45 -0.7 0.75 10.5 0.9 10.5 1.1 10.5 300 -1.5 0.85 1.1 1.35 400 Unit mA mS V V dB dB dB dB dB dB °C/W VDS = 2V, IDS = 10mA, f = 12GHz Channel to Case Note: RF parameters are measured on a sample basis as follows: Lot qty. Sample qty. Accept/Reject 1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) Edition 1.1 July 1999 1 FHX04LG, 05LG, 06LG Super Low Noise HEMT POWER DERATING CURVE 200 Total Power Dissipation (mW) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 VGS =0V LG 100 Drain Current (mA) 150 30 20 -0.2V 50 10 -0.4V -0.6V -0.8V 3 0 0 50 100 150 200 0 1 2 4 Ambient Temperature (°C) NF & Gas vs. FREQUENCY FHX04LG 4 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15 Associated Gain (dB) 2 20 3 Drain-Source Voltage (V) NF & Gas vs. IDS FHX04LG 12 Associated Gain (dB) f=12GHz VDS=2V 11 Gas 10 9 1 8 NF 7 1 NF 0 0 4 6 8 10 12 20 5 0 0 0 10 20 30 Frequency (GHz) NF & Gas vs. TEMPERATURE FHX04LG 1.5 f=12GHz VDS=2V IDS=10mA 15 Gas 10 Output Power (dBm) Drain Current (mA) OUTPUT POWER vs. INPUT POWER 15 f=12GHz VDS=2V 10 Noise Figure Matched IDS=10mA Gain Matched IDS=15mA Noise Figure (dB) 1.0 5 0.5 NF 5 0 0 100 200 300 400 Ambient Temperature (°K) -10 -5 0 5 Input Power (dBm) 2 FHX04LG, 05LG, 06LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE FHX04LG +j25 +j50 +j100 +j10 Γopt 1.0dB 1.5 +j250 2.0 2.5 3.0 0 10 25 50 100 f=12GHz VDS=2V IDS=10mA Γopt=0.72∠152° Rn/50=0.04 NFmin=0.75dB -j10 -j250 -j25 -j50 -j100 Ga(max) AND |S21| vs. FREQUENCY FHX04LG VDS=2V IDS=10mA Ga(max) 12 Gain (dB) 8 |S21| 4 0 2 4 6 810 20 Frequency (GHz) NOISE PARAMETERS FHX04LG VDS=2V, IDS=10MA Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 Γopt (MAG) (ANG) 0.99 0.97 0.93 0.87 0.80 0.72 0.63 0.53 0.42 29.0 53.0 77.0 101.0 127.0 152.0 178.0 -156.0 -129.0 NFmin (dB) 0.33 0.35 0.45 0.55 0.66 0.75 0.88 1.05 1.30 Rn/50 0.43 0.30 0.20 0.12 0.07 0.04 0.03 0.05 0.09 3 FHX04LG, 05LG, 06LG Super Low Noise HEMT S11 S22 +j100 4 6 8 +j50 +j25 +90° S21 S12 2 +j10 18 GHz 14 18 GHz 16 +j250 1 GHz 50Ω 2 2 1 1 GHz 12 16 0.04 18 GHz 14 16 4 6 8 10 10 12 0 16 12 25 14 12 100 2 250 1 GHz 1 GHz 180° 4 3 SCALE FOR |S21| 0° -j10 8 8 6 6 2 -j250 SCALE FOR |S12| 10 10 4 0.08 0.12 18 GHz -j25 4 -j100 0.16 -j50 -90° S-PARAMETERS FHX04LG VDS = 2V, IDS = 10mA FREQUENCY (GHZ) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 MAG 0.990 0.965 0.928 0.886 0.844 0.804 0.771 0.741 0.717 0.695 0.675 0.650 0.630 0.607 0.585 0.557 0.522 0.480 S21 ANG -19.3 -37.5 -55.2 -72.1 -88.3 S12 ANG 162.1 144.1 127.4 110.9 95.6 80.8 66.4 53.1 40.7 28.6 16.4 4.2 -7.8 -19.1 -30.7 -43.2 -56.9 -71.2 S22 ANG 75.1 64.8 53.3 41.9 32.2 23.9 16.6 11.5 4.9 -0.3 -3.0 -6.4 -9.3 -12.5 -16.4 -22.2 -29.4 -39.2 MAG 4.232 4.115 3.923 3.737 3.518 3.302 3.090 2.876 2.703 2.592 2.476 2.374 2.277 2.176 2.144 2.151 2.142 2.136 MAG 0.016 0.030 0.042 0.052 0.059 0.063 0.066 0.065 0.066 0.065 0.064 0.064 0.063 0.064 0.065 0.066 0.067 0.068 MAG 0.576 0.563 0.546 0.525 0.505 0.489 0.484 0.487 0.497 0.503 0.517 0.534 0.552 0.585 0.617 0.642 0.673 0.694 ANG -14.3 -28.1 -41.2 -54.4 -67.6 -80.7 -93.0 -104.5 -115.1 -124.9 -135.7 -145.8 -156.1 -164.6 -171.7 177.8 169.5 159.7 -103.4 -117.4 -129.6 -140.3 -150.8 -161.2 -171.5 178.9 170.2 161.8 151.8 140.9 128.4 Download S-Parameters, click here FHX04LG, 05LG, 06LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 1.5±0.3 (0.059) 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1 1.78±0.15 1.5±0.3 (0.07) (0.059) 4.78±0.5 4 3 2 0.5 (0.02) 1.3 Max (0.051) 1. 2. 3. 4. 0.1 (0.004) Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 5