FLL1200IU-2

FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W (Typ.) High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 187.5 -65 to +175 +175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 156.0 and -57.6 mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Drain Current Power-Added Efficiency Thermal Resistance CASE STYLE: IU Symbol IDSS gm Vp VGSO Pout GL IDSR ηadd Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 28.8A VDS = 5V, IDS = 2.88A IGS = -2.88mA VDS = 12V f=1.96 GHz IDS = 5.0A Pin = 41.0dBm Channel to Case Min. -1.0 -5 49.8 10.0 Limits Typ. Max. 48 24 -2.0 50.8 11.0 20 44 0.6 72 -3.5 30 0.8 Unit A S V V dBm dB A % °C/W Edition 1.7 December 1999 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 200 54 52 OUTPUT POWER & ηadd vs. INPUT POWER VDS = 12V IDS = 5.0A f = 1.96GHz Total Power Dissipation (mW) Pout 150 50 Output Power (dBm) 48 46 44 42 40 38 50 100 ηadd 40 30 20 10 0 24 26 28 30 32 34 36 38 40 42 50 0 0 50 100 150 200 36 34 Ambient Temperature (°C) Input Power (dBm) OUTPUT POWER vs. FREQUENCY VDS = 12V IDS = 5A Pin=42dBm 40dBm 38dBm 52 50 48 Output Power (dBm) 46 36dBm 44 34dBm 42 40 30dBm 38 36 26dBm 34 32 22dBm 30 1.87 1.90 1.93 1.96 1.99 2.02 2.05 Frequency (GHz) 2 ηadd (%) FLL1200IU-2 L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD VDS = 12V IDS = 5.0A f = 1.96GHz ∆f = 1.0MHz 2-tone test IM3 IM5 -36 -24 -28 -32 IMD (dBc) -40 -44 -48 -52 -56 -60 32 34 36 38 40 42 44 46 48 Total Output Power (dBm) S-PARAMETERS VDS = 12V, IDS = 2.5A FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 MAG .927 .926 .922 .909 .893 .864 .821 .765 .717 .722 .786 .857 .904 .929 .943 .946 .938 .933 .918 .903 .881 S21 ANG 170.0 168.8 167.2 165.5 163.7 161.7 160.4 160.1 163.3 168.6 170.8 168.7 164.3 158.9 153.3 148.4 140.8 131.3 119.4 104.1 83.0 S12 ANG MAG .005 .006 .006 .007 .009 .010 .011 .012 .012 .011 .009 .008 .009 .010 .013 .015 .018 .021 .025 .030 .037 S22 ANG MAG .929 .920 .917 .911 .907 .905 .914 .928 .940 .932 .886 .821 .766 .728 .700 .683 .662 .644 .620 .591 .553 MAG .410 .432 .470 .526 .614 .738 .895 1.084 1.268 1.353 1.320 1.174 1.006 .871 .751 .690 .653 .647 .634 .634 .558 ANG 170.6 169.8 168.7 167.8 166.9 166.0 164.8 163.5 160.2 155.8 151.6 148.8 147.6 147.3 146.9 145.8 144.2 141.4 136.9 131.2 123.4 47.9 42.6 35.7 28.6 19.7 7.5 -8.4 -28.3 -54.0 -81.1 -108.9 -134.3 -156.4 -174.7 169.0 158.3 144.8 130.6 113.5 97.3 79.7 39.5 38.5 37.8 32.2 24.7 15.1 1.8 -18.0 -46.9 -82.5 -126.8 -175.5 144.7 114.2 94.5 78.5 67.6 54.6 47.4 31.7 18.8 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. Download S-Parameters, click here 3 FLL1200IU-2 L-Band Medium & High Power GaAs FET Case Style "IU" 23.9±0.25 (0.941) 2.0 MIN. 12-R0.5 1 2 0.1 (0.004) 6 3 2.0 (0.078) 2.0 MIN. 4-R1.3 5 4 15.5±0.15 (0.610) 17.4±0.15 (0.685) 8.0±0.15 (0.315) 1.9±0.15 (0.075) 2.4±0.15 (0.094) 10.0±0.2 (0.393) 30.4±0.25 (1.181) 34.0±0.25 (1.339) 4.5 Max. (0.177) 1, 2: 3: 4, 5: 6: 0.7±0.2 Gate Source Drain Source Unit: mm (inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4