FLL410IK-4C

FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 107.0 -65 to +175 175 o Unit V V W C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item DC Input Voltage Gate Current Gate Current Operating Channel Temperature Symbol VDS IGF IGR Tch RG=5Ω RG=5Ω Condition Limit ≤12 ≤117 ≥-23 ≤145 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Drain Current Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS Vp VGSO POUT 1 Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=100mA IGS=-1.0mA VDS=12V f=3.6 GHz IDS=3A Pin=36.0dBm Channel to Case Min. -0.1 -5.0 45.0 10.5 - Limit Typ. 4.0 -0.3 46.0 11.5 6.7 44 1.0 Max. -0.5 8.7 1.4 Unit A V V dBm dB A % o Output Power Linear Gain * Drain Current Power-added Efficiency Thermal Resistance GL Idsr ηadd Rth C/W *１：GL is measured at Pin=22.0dBm ESD Class Ⅲ 2000V　~ CASE STYLE: IK Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 Oct 2003 1 FLL410IK-4C L-Band High Power GaAs FET OUTPUT POWER vs. INPUT POWER OUTPUT POWER , POWER ADDED EFFICIENCY vs. TOTAL INPUT POWER VDS=12V, IDS(DC)=3A, f=3.6GHz Pin=38dBm Pin=34dBm 48 46 Output Power [dBm] 44 42 40 38 36 34 32 3.3 3.4 VDS=12V, IDS(DC)=3A 48 46 Output Power [dBm] 44 42 40 38 36 34 32 21 23 25 27 29 31 33 35 37 39 Input Power [dBm] P.A.E Pout 80 70 60 50 40 30 20 10 0 Power Added Efficiency [%] Pin=30dBm Pin=26dBm Pin=22dBm 3.5 3.6 3.7 3.8 Frequency [GHz] IMD vs. TOTAL OUTPUT POWER -20 -24 -28 -32 -36 -40 -44 -48 -52 -56 -60 VDS=12V, f=3.6GHz, ∆ f=5MHz IM3 IM5 IMD [dBc] 2A 3A 2A 5A 3A 5A 24 26 28 30 32 34 36 38 40 42 44 Total Output Power [dBm] 2 FLL410IK-4C L-Band High Power GaAs FET ■ S-PARAMETER +50j +25j +100j +90° +10j 3. H z 6G +250j 3.6GHz 0 ∞ ±180° 6 2 Scale for |S21| 3.6GHz 0° 3. H z 6G -10j 25 10Ω -250j -25j -100j S 11 S 22 -50j 0.3 -90° Scale for |S 12| S 12 S 21 VDS=12V, IDS=3.0A Freq [GHz] 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 S11 MAG ANG 0.58 35.68 0.42 13.30 0.25 -20.74 0.14 -94.08 0.23 -164.13 0.36 163.77 0.45 142.74 0.50 124.23 0.50 108.29 0.47 93.47 0.39 78.62 0.25 65.52 0.07 82.54 0.20 179.28 0.42 166.40 0.60 150.07 0.71 136.32 0.78 124.93 0.81 115.73 0.84 107.96 0.85 101.79 S21 MAG 2.79 3.06 3.39 3.74 3.98 4.33 4.40 4.11 3.94 4.12 4.35 4.47 4.54 4.40 3.75 3.02 2.49 2.10 1.73 1.47 1.34 ANG -88.92 -111.83 -135.39 -152.40 -172.83 160.16 136.09 116.10 97.42 79.27 59.40 36.18 10.84 -17.44 -46.02 -67.67 -86.14 -103.97 -120.83 -133.98 -145.90 S12 MAG 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.05 0.05 0.04 0.03 0.03 0.02 0.02 ANG -106.81 -133.45 -165.02 167.96 138.89 113.65 88.25 67.09 45.57 26.25 5.29 -15.70 -37.11 -63.99 -90.06 -113.42 -130.59 -143.89 -155.27 -165.37 -172.96 S22 MAG ANG 0.79 62.67 0.78 52.26 0.74 39.91 0.68 26.00 0.60 11.96 0.52 -2.49 0.45 -17.92 0.39 -35.62 0.34 -56.13 0.33 -79.22 0.32 -105.46 0.32 -133.85 0.29 -165.63 0.25 156.61 0.21 109.33 0.21 58.18 0.25 18.29 0.30 -8.49 0.36 -27.76 0.40 -43.35 0.42 -58.31 3 FLL410IK-4C L-Band High Power GaAs FET ■ BOARD LAYOUT(Reference) εr=3.5 εr=3.5 εr=3.5 , t=0.6mm Unit : mm 4 FLL410IK-4C L-Band High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 5 FLL410IK-4C L-Band High Power GaAs FET For further information please contact : CAUTION FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. HONG KONG BRANCH Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 FUJITSU QUANTUM DEVICES LTD. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL: +81-55-275-4411 FAX: +81-55-275-9461 FUJITSU QUANTUM DEVICES LIMITED Business Development Division Hachioji Daiichi-Seimei Bldg., 11th Floor 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2004 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. 6