FLU17ZM

FLU17ZM FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Gate-Soutce Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 8.3 -55 to +150 150 Unit V V W ℃ ℃ Recommended Operating Condition (Case Temperature Tc=25℃) Item DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current Gate Resistance Symbol VDS Tch Igsf Igsr Rg Condition ≤ 10 ≤ 145 ≤ 9..6 ≥-1.0 200 Unit V ℃ mA mA Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Thermal Resistance CASE STYLE: ZM Symbol IDSS gm Vp VGSO P1dB G1dB Rth Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=400mA VDS=5V, IDS=30mA IGS=-30uA VDS=10V, f=2.0GHz, IDS=0.6IDSS(Typ.) Channel to Case Min. -1.0 -5 31.5 11.5 Limit Typ. 600 300 -2.0 32.5 12.5 12 Max. 900 -3.5 15 Unit mA mS V V dBm dB ℃/W G.C.P.:Gain Compression Point Note 1: Product supplied to this specification are 100% DC performance tested. Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. ESD Class Ⅱ 500 ～ 1999 V Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kΩ) Edition 1.1 May 2003 1 FLU17ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 9 Total Power Dissipation [W] 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature [℃] OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER 36 34 32 30 28 26 24 22 20 18 16 4 f = 2.0GHz, VDS = 10V, IDS = 0.6IDSS 100 80 Pout 60 40 P.A.E. 20 0 6 8 10 12 14 16 18 20 22 24 Input Power [dBm] SMALL SINGLE R.L. vs FREQUENCY Wide Band Tuning (1.8GHz ～ 2.2GHz) 15 10 Small Signal R.L. & Isolation [dB] 5 0 -5 -10 -15 -20 -25 -30 -35 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 S22 S12 S21 S11 14 10 8 6 4 2 0 -2 -4 -6 3.2 Small Signal Gain [dB] 12 Frequency [GHz] 2 Power Added Efficiency [%] Output Power [dBm] FLU17ZM L-Band Medium & High Power GaAs FET ■ S-PARAMETER +50j +25j 10 Ω 25 Ω +90 ° +100j +10j 3. 0 50 Ω 100 Ω +250j 1.0GH z 2.0 0 3. 0 2. 0 2. 0 1. H z 0G ∞ ±1 80° 1 0 6 Scale for |S 21| 3.0 0° 1. H z 0G -10j -250j 0 .4 -25j -50j -100j S 11 S 22 0.6 -9 0° Scale fo r |S 12| S 12 S 21 VDS = 10V, IDS = 360mA Freq [GHz] 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 S11 MAG ANG 0.89 -130.40 0.87 -159.47 0.87 -172.30 0.87 176.73 0.85 166.01 0.84 153.61 0.85 142.11 0.87 131.82 0.89 124.40 0.90 118.39 S21 ANG MAG 7.82 106.20 4.26 84.91 2.95 71.11 2.31 58.41 1.89 45.71 1.58 31.88 1.33 18.68 1.12 5.71 0.94 -5.77 0.79 -16.59 S12 MAG 0.05 0.05 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.03 ANG 22.81 10.25 3.23 -2.81 -10.38 -11.34 -15.81 -20.61 -22.32 -26.62 S22 MAG ANG 0.38 -144.06 0.40 -157.62 0.41 -162.28 0.42 -166.91 0.43 -172.98 0.44 179.73 0.48 170.94 0.52 162.31 0.57 154.52 0.61 147.78 3 FLU17ZM L-Band Medium & High Power GaAs FET OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER @ VDS = 10V, IDS = 0.6IDSS 35 Output Power [dBm] 30 25 20 15 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Pout Ids[mA] P.A.E. Pout Pin-Pout @f = 1.8GHz 450 Drain Current [mA] Output Power [dBm] Pin-Pout @f = 2.0GHz 35 75 Power Added Efficiency[%] 450 400 75 Power Added Efficiency[%] 350 300 250 50 Drain Current [mA] 400 30 25 20 15 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Ids[mA] P.A.E. 350 300 250 50 25 25 0 0 Pin-Pout @f = 2.2GHz 35 Output Power[dBm] 30 25 20 15 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Pout Ids[mA] P.A.E. 450 Drain Current [mA] 400 350 300 250 In p u t Po w e r [d Bm ] 75 Power Added Efficiency[%] OUTPUT POWER vs. FREQUENCY 35 30 25 20 15 1.7 1.9 2.1 2.3 50 25 0 Fr e que ncy [GHz] Pin=10dBm Pin=25dBm Pin=15dBm Pin=28dBm Pin=20dBm P1dB 4 FLU17ZM L-Band Medium & High Power GaAs FET @ VDS = 10V, IDS = 0.6IDSS IMD vs OUTPUT POWER(2-tone) 0 -10 IMD [dBc] -30 -40 -50 -60 -70 -80 15 20 25 30 35 2-tone total Pout [dBm] @∆f=+5MHz IM3@1.8GHz IM5@2.0GHz IM5@1.8GHz IM3L dBc IM3@2.0GHz IM5L dBc W-CDMA, 2-CARRIER IMD(ACLR) *fo=2.1325GHz *f1=2.1475GHz -25 ACLR(IMD) [dBc] -30 -35 -40 -45 -50 -55 -60 18 19 20 21 22 23 24 25 26 27 28 2-tone total Pout [dBm] IM3-L IM3-U IM5-L IM5-U -20 W-CDMA SINGLE CARRIER ACLR *fo=2.1325GHz -25 -30 ACLR [d Bc] W-CDMA SINGLE CARRIER CCDF AND GAIN *fo =2.1325GHz 15 14 13 CCDF,Gain [d B] 12 11 10 9 8 7 6 -35 -40 -45 -50 -55 -60 20 21 22 23 24 25 26 27 28 29 30 Ou tpu t Pow e r [d Bm ] - 5M Hz - 10M Hz +5M Hz +10M Hz 5 18 23 Ou tpu t Pow e r [d Bm ] 0.01% Pe ak Gain 28 Note : *All signals are W-CDMA modulated at 3GPP3.4.12-00 BS-1 64ch non clipping. 5 FLU17ZM L-Band Medium & High Power GaAs FET ■ Recommended Bias Circuit and Internal Block Diagram εr=3.5, t=0.8 * Board was tuned for wide band performance with data shown on pages 4 and 5. 6 FLU17ZM L-Band Medium & High Power GaAs FET ■ Package Outline 7 FLU17ZM L-Band Medium & High Power GaAs FET For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. . . FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 8