FMM5048GJ

FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 36.0dBm(Typ.) High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION The FMM5048GJ is a module that contains a two-stage amplifier, internally matched, for standard communications in the 13.75 to 14.5GHz frequency range. This product is well suited for VSAT applications as it offers high power, high gain, and low VSWR. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Parameter DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Tc = 25°C Condition Rating 12 -7 12 -55 to +125 -55 to +85 Unit V V dBm °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 10 volts. 2. The gate operating voltage (VGG) should not exceed -5 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Ta = 25°C) Item Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Gain Flatness Input VSWR Output VSWR DC Input Current DC Input Current Symbol P1dB G1dB ∆G VSWRi VSWRo IDD IGG VDD = 10V VGG = -5V f = 13.75 ~ 14.5GHz Condition Min. 35.0 23.0 Limit Typ. Max. 36.0 26.0 1.2 2:1 3:1 2.1 6 3.0 2.5:1 3.5:1 2.5 12 Unit dBm dB dB A mA CASE STYLE: GJ G.C.P.: Gain Compression Point Edition 1.1 January 2001 1 FMM5048GJ VSAT MMIC OUTPUT POWER vs. FREQUENCY VDS = 10V P1dB 36 OUTPUT POWER vs. INPUT POWER VDS=10V f = 14.25 GHz 36 Output Power (dBm) Pin=10dBm 7dBm 34 32 Output Power (dBm) 34 4dBm 32 28 26 20 10 2dBm 30 0dBm 28 -4 -2 0 2 4 6 8 10 12 14 Input Power (dBm) 13.75 14 14.25 14.5 Frequency (GHz) RECOMMENDED BIAS CIRCUIT 1000pF 50Ω VGG VDD 50Ω 1000pF 3 2 RFin 1 1000pF 50Ω 4 5 RFout 6 50Ω 1000pF VGG VDD Note: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. 2 ηadd (%) 30 30 FMM5048GJ VSAT MMIC +j50 +j100 +j25 14.1 14.1 14.5 14.7 14.3 14.5 S11 S22 +90° 14.3 S21 S12 +j10 +j250 13.9 13.9 20 13.7 13.5GHZ 10 13.7 14.3 14.7 0 10 14.1 13.9 14.1 14.3 14.7 14.5 250 180° 40 30 SCALE FOR |S21| 13.5GHZ 14.5 0° 13.9 13.5GHZ 13.5GHZ -j250 SCALE FOR |S12| -j10 .004 14.7 .006 .008 -j25 -j50 -j100 -90° S-PARAMETERS VDD = 10V, VGG = -5V FREQUENCY S11 (MHZ) MAG ANG 1350 1360 1370 1380 1390 1400 1410 1420 1430 1440 1450 1460 1470 .273 .275 .278 .263 .227 .145 .022 .118 .214 .257 .258 .244 .230 -65.1 -67.3 -71.8 -78.4 -89.5 -102.8 -97.8 24.0 6.2 -8.1 -17.8 -21.6 -21.4 S21 MAG 18.067 20.347 22.777 25.351 27.258 28.576 28.940 28.940 28.379 27.542 26.546 25.003 22.777 ANG -103.9 -127.4 -152.9 -179.5 152.0 121.9 92.7 65.6 37.7 7.4 -22.0 -50.4 -76.9 S12 MAG ANG .002 .001 .001 .002 .003 .005 .007 .008 .009 .009 .009 .009 .008 -13.5 -89.7 -168.0 160.2 137.4 112.2 90.0 68.2 59.6 56.0 51.7 44.1 24.2 S22 MAG ANG .421 .400 .402 .417 .421 .386 .322 .307 .342 .363 .375 .389 .404 -128.4 -129.1 -131.7 -137.8 -148.5 -163.4 -174.7 180.0 163.0 132.0 99.4 67.7 42.0 Download S-Parameters, click here 3 FMM5048GJ VSAT MMIC Case Style "GJ" Metal-Ceramic Hermetic Package 4-R 1.2±0.15 (0.047) 6-0.3 (0.012) 3.5 Max. (0.137) 1.3±0.15 (0.051) 3 11±0.15 (0.433) 15 (0.591) 7 (0.276) 3.8 (0.149) 4 5 6 7 (0.276) 0.9 (0.035) 1. 2. 3. 4. 5. 6. 7. VDD RFin VGG VGG RFout VDD GND Unit: mm(inches) 2 1 7 6±0.15 (0.236) 12±0.15 (0.472) INDEX 1Min. (0.039) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0)1628 504800 FAX: +44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0500M200 4