MB3761

FUJITSU SEMICONDUCTOR DATA SHEET DS04-27300-2E ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications, the Fujitsu MB3761 is a dual comparator with a built-in high precision reference voltage generator. Outputs are open-collector outputs and enable use of the OR-connection between both channels. Both channels have hysteresis control outputs. Because of a wide power supply voltage range and a low power supply current, the MB3761 is suitable for power supply monitors and battery backup systems. • Wide power supply voltage range: 2.5 V to 40 V • Low power and small voltage dependency supply current: 250 µA typical. • Built-in stable low voltage generator: 1.20 V typical. • Easy-to-add hysteresis characteristics. • Package: 8-pin Plastic SIP Package (Suffix: -PS) 8-pin Plastic DIP Package (Suffix: -P) 8-pin Plastic FPT Package (Suffix: -PF) ABSOLUTE MAXIMUM RATINGS (See NOTE) Rating Power Supply Voltage Output Voltage Output Current Input Voltage Power Dissipation Storage Temperature Symbol VCC VO IO VIN PD TSTG Value 41 41 50 -0.3 to +6.5 350 (TA ≤ 70°C) -55 to 125 Unit V V mA V mW IN-B HYS-A IN-A OUT-A 1 PLASTIC PACKAGE SIP-08P-M03 PLASTIC PACKAGE DIP-08P-M01 PLASTIC PACKAGE FPT-08P-M01 PIN ASSIGNMENT (FRONT VIEW) B (+) + — (—) A — + 3 (+) 2 1 (—) 8 7 6 5 4 VCC HYS-B OUT-B GND OUT-A IN-A HYS-A IN-B (TOP VIEW) (+) + B — (+) 3 + A — (—) 6 (—) 7 8 VCC HYS-B OUT-B GND °C 2 NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 4 5 This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit. 1 MB3761 Figure 1. MB3761 Equivalent Circuit 8 V CC 2 HYS-A 4 OUT-A V REF ∼ 1.2V 7 HYS-B 5 GND 3 IN-A 1 IN-B 6 OUT-B s RECOMMENDED OPERATING CONDITIONS Parameter Symbol VCC TA IO4 IO6 Value 2.5 to 40 -20 to 75 4.5 3.0 Unit V °C mA mA Power Supply Voltage Operating Temperature Output Current at pin 4 Output Current at pin 6 2 MB3761 s ELECTRICAL CHARACTERISTICS TA=25°C, VCC=5V Parameter Designator ICCL ICCH VTH Conditions VCC=40 V, VIL=1.0 V VCC=40 V, VIH =1.5 V IO =2 mA, VO=1 V 2.5 V ≤ VCC ≤ 5.5 V 4.5 V ≤ VCC ≤ 40 V IOA= 4.5 mA, VOA=2 V IHA= 20 mA, VHA=3 V IOB=3 mA, VOB=2 V IHB=3 mA, VHB=2 V -20°C ≤ TA ≤ 70°C Values Min 1.15 -10 VIL=1.0 V VIH=1.5 V VO=40 V, VIL=1.0 V VCC=40 V, VHA=0 V, VIL=1.0 V VHB=40 V, VIH=1.5 V VO=1.0 V, VIH=1.5 V VO=1.0 V, VIH=1.5 V VH=0 V, VIH=1.5 V VH=1.0 V,VIL =1.0 V IO= 4.5 mA, VIH =1.5 V IO= 3.0 mA, VIH=1.5 V IH= 20 µA, VIH=1.5 V IH= 3.0 mA, VIL=1.0 V RL=5 KΩ RL=5 KΩ 6 4 40 4 Typ 250 400 1.20 3 10 2.0 2.0 Max 400 600 1.25 12 40 -10 Unit µA µA V mV mV mV mV mV/°C mV nA 500 1 0.1 1 400 400 200 400 nA µA µA µA mA mA µA mA mV mV mV mV µs µs Power Supply Voltage Threshold Voltage Deviation of Threshold Voltage Offset Voltage between Outputs Temperature Coefficient of Threshold Voltage Difference Voltage on Threshold Voltage between Channel Input Current Output Leakage Current Hysteresis Output Leakage Current Output Sink Current Hysteresis Current Output Saturation Voltage Hysteresis Saturation Output Delay Time ∆VTH1 ∆VTH2 VOOSA VOSSB α ±0.05 5 100 12 10 80 10 120 120 50 120 2 3 ∆VTHAB IIL IIH IOH IHLA IHHB IOLA IOLB IHHA IHLB VOLA VOLB VHHA VHLB tPHL tPLH 3 MB3761 Figure 2. Operational Definitions V OA V IN R4 R6 R1 1 R5 2 R3 3 6 7 HYS-B OUT-B VOB 4 R2 V OA OUT-A GND V ILB V IHB V IN 5 V IN 8 V ILA V HB V HB V IHA RL RL V IN V CC V OB NOTE) VIHA =(1+ R1 )V R R2 R1 R 2 // R )V R R1 V R 3 CC V IHB =(1+ R4 R 5 // R R4 )V R R5 6 )V R VR ∼ VTH ( ∼ 1.20V) VILA =(1+ 3 V ILB =(1+ R 2 // R 3 = R2 R3 R2 + R 3 R5 R6 R5 + R 6 R 5 // R 6 = 4 MB3761 s TYPICAL PERFORMANCE CHARACTERISTICS Fig. 3 Power Supply Current ICC (µA) 500 400 VIH = 1.5V 300 200 VIL=1.0V 100 0 0 10 20 30 (V) 40 Power Supply Voltage VCC 70°C 25°C -20°C 70°C 25°C -20°C 60 30 0 0 10 20 30 (V) 40 Power Supply Voltage VCC 90 VIH=1.5V Power Supply Current vs Power Supply Voltage Fig. 4 Hysteresis 150 (A) Current IHHA ( µA) 120 Hysteresis (A) Current vs Power Supply Voltage 70°C 25°C -20°C Output (A) Voltage VOLA (V) 1.0 0.8 0.6 0.4 0.2 0 Fig. 5 - Output (A) Voltage vs. Output (A) Current -20°C 25°C VCC=5V VIH=1.5V Fig. 6 Output 1.0 (B) Voltage VOLB (V) 0.8 0.6 0.4 0.2 0 Output (B) Voltage vs. Output (B) Current -20°C 25°C 70°C 70°C VCC=5V VIH=1.5V 0 5 10 15 20 25 0 5 10 15 20 25 Output (A) Current IOLA (mA) Output (B) Current IOLB (mA) Threshold 1.22 Voltage VTH (V) 1.21 1.20 Fig. 7 - Threshold Voltage vs. Power Supply Voltage Fig. 8 Threshold Voltage VTH (V) 1.22 1.21 1.20 Threshold Voltage vs. Temperature TA=25°C 1.19 1.18 1.17 1.19 VCC=5V 1.18 1.17 0 10 20 30 40 -20 0 20 40 60 80 Power Supply Voltage VCC (V) Temperature TA (°C) 5 MB3761 s APPLICATION EXAMPLES Figure 9. Addition of Hysteresis VOA VCC (VIN) R1 1 R2 2 3 4 R3 VIHA =(1+ GND 8 7 6 5 VOA VILA R1 + R2 )V R3 VIHA VILA =(1+ R2 )VR R3 VIH (VCC) RL IN VCC R1 R 1 R2 2 3 R3 4 8 7 6 5 C1 GND VIH VILB VIHB VOB VHB VOB VIH L VHB Note: All calculations occur with the output voltage at 0. The hysteresis values are adjusted for load condition and saturation voltage. VIHB = (1 + R1 )V R R2 V ILB =(1+ R1 R2 + R3 )VR 6 MB3761 s APPLICATION EXAMPLES (Continued) Figure 10. Voltage Detection for Alarm VCC R3 R1 1 2 3 4 R2 R4 8 7 6 5 RL VO VO VCCL VCCH = (1+ GND R1 )VR R2 VCCH VCCL = (1+ R3 R4 VCC )VR VCCL ≥ 2.5 V For hysteresis, a positive feedback from pin 2 or 7 is required. Figure 11. Voltage Detection for Alarm VCC R3 R1 1 R4 2 3 R2 4 8 7 6 5 RL VO VO VCC VCCL GND VCCH = (1 + R3 )VR R4 VCCH VCCL = (1 + R1 )VR R2 VCCL ≥ 2.5 V 7 MB3761 s APPLICATION EXAMPLES (Continued) Figure 12. Programmable Zener VCC R1 VZ R2 1 2 3 + R3 GND 4 8 7 6 5 VZ R2 +R3 R2 VZ ∼ (1+ R3 ) VR ≤ VCC - VZ R1 ≤ 6mA Channel B can be used independently. Figure 13. Recovery Reset Circuit VCC = 5 V R1 R2 3.3 KΩ 15 KΩ 330 KΩ R4 1 2 3 6.8 KΩ R3 4 0.1µF C1 OUT GND 8 7 6 5 R5 6.8 KΩ OUT 8 MB3761 s TYPICAL CHARACTERISTICS Figure 14. DC Characteristics VO (V) 6 Figure 15. Response Characteristics VCC 5 VCCL VCCH 4 VCC (V) 0 VO 2 4.4 VO (V) tRST 0 0 1 2 3 VCC (V) 4 5 6 0 ∼ 30 ms • Voltage Threshold Levels (VCCL and VCCH) and Hysteresis Width can be changed by the resistors (R1 through R4). R1 + R2 + R3 VCCL = VTH R3 VCCH = VCCL + R1 (R2 + R3 ) VTH R3 R4 • Power-On Reset Time is provided by the following approximate equation: VTH R1 tRST = -C1 R4 • In { 1 (1 + VCC R2 + R3 The recommended value of hFE of the external transistor is from 50 to 200. In the case of an instant power fail, the remaining charge in C1 effects tRST. If necessary, the reversed output is provided on HYS terminal )} • • • 9 MB3761 s PACKAGE DIMENSIONS (Continued) 8 pin, Plastic SIP (SIP-08P-M03) 19.65 –0.35 +0.15 +.006 3.26±0.25 (.128±.010) .774 –.014 INDEX-1 6.20±0.25 (.244±.010) 8.20±0.30 (.323±.012) INDEX-2 0.99 –0 +0.30 +.012 .039 –0 4.00±0.30 (.157±.012) 2.54(.100) TYP 1.52 –0 +0.30 +.012 .060 –0 0.50±0.08 (.020±.003) 0.25±0.05 (.010±.002) C 1994 FUJITSU LIMITED S08010S-3C-2 Dimensions in mm (inches). 10 MB3761 s PACKAGE DIMENSIONS (Continued) 8 pin, Plastic DIP (DIP-08P-M01) 9.40 –0.30 +0.40 +.016 .370 –.012 1 PIN INDEX 6.20±0.25 (.244±.010) 4.36(.172)MAX 0.51(.020)MIN 0.25±0.05 (.010±.002) 3.00(.118)MIN 0.46±0.08 (.018±.003) +0.30 +.012 –0 0.99 –0 .039 0.89 .035 +0.30 1.52 –0 +.012 –0 +0.35 –0.30 +.014 –.012 .060 2.54(.100) TYP 7.62(.300) TYP 15°MAX C 1994 FUJITSU LIMITED D08006S-2C-3 Dimensions in mm (inches). 11 MB3761 s PACKAGE DIMENSIONS (Continued) 8 pin, Plastic SOP (FPT-08P-M01) 2.25(.089)MAX 6.35 –0.20 .250 –.008 +0.25 +.010 0.05(.002)MIN (STAND OFF) INDEX 5.30±0.30 (.209±.012) 7.80±0.40 (.307±.016) 6.80 –0.20 +.016 .268 –.008 +0.40 1.27(.050) TYP 3.81(.150)REF 0.45±0.10 (.018±.004) Ø0.13(.005) M 0.15 –0.02 +.002 .006 –.001 +0.05 0.50±0.20 (.020±.008) Details of "A" part 0.20(.008) 0.50(.020) "A" 0.10(.004) 0.18(.007)MAX 0.68(.027)MAX C 1994 FUJITSU LIMITED F08002S-4C-4 Dimensions in mm(inches). 12 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-88, Japan Tel: (044) 754-3763 Fax: (044) 754-3329 North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, U.S.A. Tel: (408) 922-9000 Fax: (408) 432-9044/9045 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10 63303 Dreieich-Buchschlag Germany Tel: (06103) 690-0 Fax: (06103) 690-122 Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LIMITED #05-08, 151 Lorong Chuan New Tech Park Singapore 556741 Tel: (65) 281-0770 Fax: (65) 281-0220 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan. F9703 © FUJITSU LIMITED Printed in Japan 24