MB81ES641645A-07

FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11453-1E 64 Mbit SDR I/F Consumer FCRAM Consumer Embedded Application Specific Memory MB81ES641645A-07 F EATURES • • • • • • • • • • TM SDRAM Interface 1 M word × 16 bit × 4 bank organization 1.8 V Low Power Supply (VDD = VDDQ) 4K Refresh Cycle every 64ms Auto- and Self-Refresh Burst Read / Burst Write and Burst Read / Single Write Operation Capability Programmable Partial Array Self Refresh (PASR) Programmable Driver Strength (DS) Deep Power Down Mode CKE Power Down Mode M AIN SPECIFICATIONS Part Number Organization Supply Voltage (VDD = VDDQ) Clock Frequency (Max.) CL＝2 CL＝3 CL＝2 CL＝3 CL＝2 CL＝3 MB81ES641645A-07 1 M Word × 16 bit × 4 bank 1.7 V to 1.95 V 81 MHz 135 MHz 12.3 ns 7.4 ns 9 ns 6.5 ns T.B.D. T.B.D. T.B.D. Clock Period (tCK) (Min.) Access Time from Clock (tAC) (Max.) Operating Current (Max.) Standby Current (Power Down Mode) (Max.) Self Refresh Current (Max.) Note: FCRAM is a trademark of Fujitsu Limited, Japan. July, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved