MB82DBS02154E-70L

FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11451-2E 32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus MB82DBS02154E-70L F EATURES • • • • • • • TM Pseudo SRAM with Single Data Rate (SDR) Burst Interface COSMORAM (Common Specifications for Mobile RAM ) Revision 3 16 bit Multiplexed Address and Data Bus Asynchronous Mode Capability _____ ______ • Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial 16 Mbit Partial Chip / Wafer Business M AIN SPECIFICATIONS Part Number Organization I/O Bus Configuration Supply Voltage Burst Frequency (Max.) CLK Access Time (Max.) _____ MB82DBS02154E-70L 2 M Word × 16 bit Multiplexed Address and Data Bus 1.7 V to 1.95 V RL＝7 RL＝7 104 MHz 7 ns 70 ns 30 mA 120 μA Sleep 10 μA CE1 Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2007 FUJITSU LIMITED All rights reserved