MB82DBS08314A-80L

FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11445-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS08314A-80L F EATURES • • • • • • • • TM Pseudo SRAM with Single Data Rate (SDR) Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3 Burst Mode Function Multiplexed Address and Data Bus Asynchronous Mode Capability High-speed Data Transfer Rate _____ _____ • Byte Control by B3 to B0 Various Power Down Mode Sleep 32 Mbit Partial 64 Mbit Partial 128 Mbit Partial Shipping Form : Wafer and Chip M AIN SPECIFICATIONS Part Number Organization I/O Bus Configuration Interface Supply Voltage Burst Frequency (Max.) Data Transfer Rate CLK Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Sleep RL=8, 7 MB82DBS08314A-80L 8 M WORD × 32 BIT × 32 Multiplexed Address and Data Bus Single Data Rate (SDR) 1.7 V to 1.95 V 100 MHz 400M byte / s 7 ns 40 mA 250 μA 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright©2006-2007 FUJITSU LIMITED All rights reserved