MB82DP02183C-65LPBT

FUJITSU SEMICONDUCTOR DATA SHEET DS05-11422-3E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory MB82DP02183C-65L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface ■ DESCRIPTION The Fujitsu MB82DP02183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DP02183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. This MB82DP02183C is suited for mobile applications such as Cellular Handset and PDA. *: FCRAM is a trademark of Fujitsu Limited, Japan ■ FEATURES • • • • • • • Asynchronous SRAM Interface Fast Access Cycle Time : tAA = tCE = 65 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V Wide Operating Temperature : TA = -30 °C to +85 °C Byte Control by LB and UB Low Power Consumption : IDDA1 = 30 mA Max IDDS1 = 80 µA Max • Various Power Down mode : Sleep 4M-bit Partial 8M-bit Partial • Shipping Form : Wafer/Chip, 71-ball plastic FBGA package Copyright© 2004-2006 FUJITSU LIMITED All rights reserved MB82DP02183C-65L ■ PIN ASSIGNMENT (TOP VIEW) A B C D E F G H J K L M 8 7 6 5 4 3 2 1 NC NC NC NC A11 A8 WE DU LB A15 A12 A19 CE2 DU UB A6 A3 NC A13 A9 A20 DU A18 A5 A2 NC A14 A10 A16 NC DQ7 NC DQ16 VSS DQ8 DQ15 DQ6 NC DQ12 DQ3 DQ9 NC NC NC NC DQ14 DQ13 DQ5 DQ4 VDD VDD A17 A4 A1 DQ2 VSS A0 DQ10 DQ11 OE NC DQ1 CE1 NC NC NC A7 NC NC NC NC (BGA-71P-M03) 2 MB82DP02183C-65L ■ PIN DESCRIPTION Pin Name A20 to A0 CE1 CE2 WE OE LB UB DQ8 to DQ1 DQ16 to DQ9 VDD VSS NC DU Address Input Chip Enable 1 (Low Active) Chip Enable 2 (High Active) Write Enable (Low Active) Output Enable (Low Active) Lower Byte Control (Low Active) Upper Byte Control (Low Active) Lower Byte Data Input/Output Upper Byte Data Input/Output Power Supply Ground No Connection Don’t Use Description 3 MB82DP02183C-65L ■ BLOCK DIAGRAM VDD VSS A20 to A0 Address Latch & Buffer Row Decoder Memory Cell Array 33,554,432 bit DQ8 to DQ1 I/O Data Buffer DQ16 to DQ9 Input Data Latch & Control Sense/Switch Output Data Control Column Decoder Address Latch & Buffer CE2 Power Control CE1 WE LB UB OE Timing Control 4 MB82DP02183C-65L ■ FUNCTION TRUTH TABLE Mode Standby (Deselect) Output Disable*1 Output Disable (No Read) Read (Upper Byte) H Read (Lower Byte) Read (Word) No Write Write (Upper Byte) L Write (Lower Byte) Write (Word) Power Down*2 L X X X H* 4 CE2 H CE1 H WE X H OE X H LB X X H H UB X X H L H L H L H L X A20 to A0 X *3 Valid Valid Valid Valid Valid Valid Valid Valid X DQ8 to DQ1 High-Z High-Z High-Z High-Z Output Valid Output Valid Invalid Invalid Input Valid DQ16 to DQ9 High-Z High-Z High-Z Output Valid High-Z Output Valid Invalid Input Valid Invalid L L H L L H H L L X Input Valid Input Valid High-Z High-Z Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance *1 : Should not be kept this logic condition longer than 1 µs. *2 : Power Down mode can be entered from Standby state and all DQ pins are in High-Z state. Data retention depends on the selection of Power Down Program. Refer to “■ Power Down” for the detail. *3 : Can be either VIL or VIH but must be valid before Read or Write. *4 : OE can be VIL during Write operation if the following conditions are satisfied; (1) Write pulse is initiated by CE1. See “(12) READ/WRITE Timing #1-1 (CE1 Control)” in “■ TIMING DIAGRAMS”. (2) OE stays VIL during Write cycle. 5 MB82DP02183C-65L ■ POWER DOWN Power Down The Power Down is low power idle state controlled by CE2. CE2 Low drives the device in power down mode and maintains low power idle state as long as CE2 is kept Low. CE2 High resumes the device from power down mode. This device has 3 power down modes, Sleep, 4M-bit Partial and 8M-bit Partial. These can be programmed by series of read/write operation. Each mode has following features. Mode Data Retention Retention Address Sleep (default) 4M-bit Partial 8M-bit Partial No 4M bits 8M bits N/A 00000h to 3FFFFh 00000h to 7FFFFh The default state is Sleep and it is the lowest power consumption but all data will be lost once CE2 is brought to Low for Power Down. It is not required to program to Sleep mode after power-up. Power Down Program Sequence The program requires total six read/write operations with unique address. Between each read/write operation requires that device be in standby mode. Following table shows the detail sequence. Cycle # Operation Address Data 1st 2nd 3rd 4th 5th 6th Read Write Write Write Write Read 1FFFFFh (MSB) 1FFFFFh 1FFFFFh 1FFFFFh 1FFFFFh Address Key Read Data (RDa) RDa RDa Don’t care (X) X Read Data (RDb) The first cycle is to read from most significant address (MSB). The second and third cycle are to write back the data (RDa) read by first cycle. If the second or third cycle is written into the different address, the program is cancelled and the data written by the second or third cycle is valid as a normal write operation. The forth and fifth cycle is to write to MSB. The data of forth and fifth cycle are don’t-care. If the forth or fifth cycle is written into different address, the program is also cancelled but write data may not be written as normal write operation. The last cycle is to read from specific address key for power down mode selection. Once this program sequence is performed from a Partial mode to other Partial mode, the write data stored in memory cell array may be lost. So, it should perform this program prior to regular read/write operation if Partial power down mode is used. Address Key The address key has following format. Mode Sleep (default) 4M-bit Partial 8M-bit Partial 6 Address A20 1 1 0 A19 1 0 1 A18 to A0 1 1 1 Hexadecimal 1FFFFFh 17FFFFh 0FFFFFh MB82DP02183C-65L ■ ABSOLUTE MAXIMUM RATINGS Parameter Voltage of VDD Supply Relative to VSS Voltage at Any Pin Relative to VSS Short Circuit Output Current Storage Temperature Symbol VDD VIN, VOUT IOUT TSTG Value Min − 0.5 − 0.5 − 50 − 55 Max + 3.6 + 3.6 + 50 + 125 Unit V V mA o C WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol VDD (31) Supply Voltage*1, *2 VDD (26) VSS High Level Input Voltage *1, *2, *3 Low Level Input Voltage *1, *4 Ambient Temperature VIH (31) VIH (26) VIL TA Value Min 3.1 2.6 0 VDD × 0.8 VDD × 0.8 − 0.3 − 30 Max 3.5 3.1 0 VDD + 0.2 ( ≤ 3.6) VDD + 0.2 VDD × 0.2 + 85 Unit V V V V V V °C *1 : All voltages are referenced to VSS. *2 : This device supports both VDD(31) and VDD(26) voltage ranges on identical device. VDD range is divided into two ranges as VDD(31) and VDD(26) on the table due to VIH varied according to VDD supply voltage. *3 : Maximum DC voltage on input and I/O pins are VDD + 0.2 V. During voltage transitions, inputs may overshoot to VDD + 1.0 V for periods of up to 5 ns. *4 : Minimum DC voltage on input or I/O pins are -0.3 V. During voltage transitions, inputs may undershoot VSS to -1.0 V for periods of up to 5 ns. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. ■ PACKGE CAPACITANCE (f = 1 MHz, TA = +25 °C) Parameter Address Input Capacitance Control Input Capacitance Data Input/Output Capacitance Symbol CIN1 CIN2 CI/O Test conditions VIN = 0 V VIN = 0 V VIO = 0 V Value Min ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ Max 5 5 8 Unit pF pF pF 7 MB82DP02183C-65L ■ ELECTRICAL CHARACTERISTICS (At recommended operating conditions unless otherwise noted.) 1. DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current Output High Voltage Level Output Low Voltage Level VDD Power Down Current Symbol ILI ILO VOH VOL IDDPS IDDP4 IDDP8 IDDS VDD Standby Current IDDS1 VSS ≤ VIN ≤ VDD 0 V ≤ VOUT ≤ VDD, Output Disable VDD = VDD Min, IOH = −0.5 mA IOL = 1 mA VDD = VDD (26) Max, VIN = VIH or VIL, CE2 ≤ 0.2 V SLEEP 4M-bit partial 8M-bit partial Test conditions Value Min −1.0 −1.0 2.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max +1.0 +1.0 ⎯ 0.4 10 40 50 1.5 Unit µA µA V V µA µA µA mA µA mA mA VDD = VDD (26) Max, VIN = VIH or VIL, CE1 = CE2 = VIH VDD = VDD (26) Max, VIN ≤ 0.2 V or VIN ≥ VDD − 0.2 V, CE1 = CE2 ≥ VDD − 0.2 V VDD = VDD (26) Max, VIN = VIH or VIL, CE1 = VIL and CE2 = VIH, IOUT = 0 mA tRC/tWC = Min tRC/tWC = 1 µs 80 IDDA1 VDD Active Current IDDA2 30 3 VDD Page Read Current IDDA3 VDD = VDD (26) Max, VIN = VIH or VIL, CE1 = VIL and CE2 = VIH, IOUT = 0 mA, tPRC = Min 10 mA Notes : • All voltages are referenced to VSS. • IDD depends on the output termination, load conditions, and AC characteristics. • After power on, initialization following POWER-UP timing is required. DC characteristics are guaranteed after the initialization. 8 MB82DP02183C-65L 2. AC CHARACTERISTICS (1) READ OPERATION Parameter Read Cycle Time CE1 Access Time OE Access Time Address Access Time LB, UB Access Time Page Address Access Time Page Read Cycle Time Output Data Hold Time CE1 Low to Output Low-Z OE Low to Output Low-Z LB, UB Low to Output Low-Z CE1 High to Output High-Z OE High to Output High-Z LB, UB High to Output High-Z Address Setup Time to CE1 Low Address Setup Time to OE Low Address Invalid Time Address Hold Time from CE1 High Address Hold Time from OE High WE High to OE Low Time for Read CE1 High Pulse Width Symbol tRC tCE tOE tAA tBA tPAA tPRC tOH tCLZ tOLZ tBLZ tCHZ tOHZ tBHZ tASC tASO tAX tCHAH tOHAH tWHOL tCP Value Min 65 ⎯ ⎯ ⎯ ⎯ ⎯ 20 5 5 0 0 ⎯ ⎯ ⎯ −5 10 ⎯ −6 −6 12 12 Max 1000 65 40 65 30 20 1000 ⎯ ⎯ ⎯ ⎯ 20 15 20 ⎯ ⎯ 10 ⎯ ⎯ 1000 ⎯ Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns *10 *5, *8 *9 Notes *1, *2 *3 *3 *3, *5 *3 *3, *6 *1, *6, *7 *3 *4 *4 *4 *3 *3 *3 *1 : Maximum value is applicable if CE1 is kept at Low without change of address input of A20 to A3. *2 : Address should not be changed within minimum tRC. *3 : The output load 50 pF. *4 : The output load 5 pF. *5 : Applicable to A20 to A3 when CE1 is kept at Low. *6 : Applicable only to A2, A1 and A0 when CE1 is kept at Low for the page address access. *7 : In case Page Read Cycle is continued with keeping CE1 stays Low, CE1 must be brought to High within 4 µs. In other words, Page Read Cycle must be closed within 4 µs. *8 : Applicable when at least two of address inputs among applicable are switched from previous state. *9 : tRC(Min) and tPRC(Min) must be satisfied. *10 : If actual value of tWHOL is shorter than specified minimum values, the actual tAA of following Read may become longer by the amount of subtracting actual value from specified minimum value. 9 MB82DP02183C-65L (2) WRITE OPERATION Value Min 65 0 40 40 40 −5 −5 0 12 12 12 12 0 −5 0 30 Max 1000 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1000 1000 ⎯ ⎯ ⎯ ⎯ ⎯ Parameter Write Cycle Time Address Setup Time CE1 Write Pulse Width WE Write Pulse Width LB, UB Write Pulse Width LB, UB Byte Mask Setup Time LB, UB Byte Mask Hold Time Write Recovery Time CE1 High Pulse Width WE High Pulse Width LB, UB High Pulse Width Data Setup Time Data Hold Time OE High to CE1 Low Setup Time for Write OE High to Address Setup Time for Write LB and UB Write Pulse Overlap Symbol tWC tAS tCW tWP tBW tBS tBH tWR tCP tWHP tBHP tDS tDH tOHCL tOES tBWO Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns *7 *8 Notes *1, *2 *3 *3 *3 *3 *4 *5 *6 *1 : Maximum value is applicable if CE1 is kept at Low without any address change. *2 : Minimum value must be equal or greater than the sum of write pulse (tCW, tWP or tBW) and write recovery time (tWR). *3 : Write pulse is defined from High to Low transition of CE1, WE, LB or UB, whichever occurs last. *4 : Applicable for byte mask only. Byte mask setup time is defined to the High to Low transition of CE1 or WE whichever occurs last. *5 : Applicable for byte mask only. Byte mask hold time is defined from the Low to High transition of CE1 or WE whichever occurs first. *6 : Write recovery is defined from Low to High transition of CE1, WE, LB or UB, whichever occurs first. *7 : If OE is Low after minimum tOHCL, read cycle is initiated. In other word, OE must be brought to High within 5 ns after CE1 is brought to Low. *8 : If OE is Low after new address input, read cycle is initiated. In other word, OE must be brought to High at the same time or before new address valid. 10 MB82DP02183C-65L (3) POWER DOWN PARAMETERS Parameter CE2 Low Setup Time for Power Down Entry CE2 Low Hold Time after Power Down Entry CE1 High Hold Time following CE2 High after Power Down Exit [Sleep mode only] CE1 High Hold Time following CE2 High after Power Down Exit [not in Sleep mode] CE1 High Setup Time following CE2 High after Power Down Exit *1 : Applicable also to power-up. *2 : Applicable when 4M-bit and 8M-bit Partial mode is programmed. (4) OTHER TIMING PARAMETERS Parameter CE1 High to OE Invalid Time for Standby Entry CE1 High to WE Invalid Time for Standby Entry CE2 Low Hold Time after Power-up CE1 High Hold Time following CE2 High after Power-up Input Transition Time Symbol tCHOX tCHWX tC2LH tCHH tT Value Min 10 10 50 300 1 Max ⎯ ⎯ ⎯ ⎯ 25 Unit ns ns µs µs ns *2 *1 Note Symbol tCSP tC2LP tCHH tCHHP tCHS Value Min 10 65 300 1 0 Max ⎯ ⎯ ⎯ ⎯ ⎯ Unit ns ns µs µs ns *1 *2 *1 Note *1 : Some data might be written into any address location if tCHWX(Min) is not satisfied. *2 : The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns, it may violate AC specification of some timing parameters. (5) AC TEST CONDITIONS Description Input High Level Input Low Level Input Timing Measurement Level Input Transition Time Symbol VIH VIL VREF tT Test Setup ⎯ ⎯ ⎯ Between VIL and VIH Value VDD × 0.8 VDD × 0.2 VDD × 0.5 5 Unit V V V ns Note • AC MEASUREMENT OUTPUT LOAD CIRCUIT VDD 0.1 µF VSS Device under Test 50 pF Output 11 MB82DP02183C-65L ■ TIMING DIAGRAMS (1) READ Timing #1 (Basic Timing) tRC Address tASC tCE Address Valid tCHAH tASC CE1 tOE tCP tCHZ OE tOHZ tBA LB, UB tBLZ tOLZ tOH tBHZ DQ (Output) tCLZ Valid Data Output Note : This timing diagram assumes CE2 = H and WE = H. 12 MB82DP02183C-65L (2) READ Timing #2 (OE & Address Access) tRC tAX tRC Address Address Valid Address Valid tAA tOHAH tAA CE1 Low tASO tOE OE LB, UB tOHZ tOLZ tOH Valid Data Output tOH Valid Data Output DQ (Output) Note : This timing diagram assumes CE2 = H and WE = H. 13 MB82DP02183C-65L (3) READ Timing #3 (LB , UB Byte Access) tAX tRC tAX Address tAA Address Valid CE1, OE Low tBA tBA LB tBA UB tBHZ tBLZ tOH tBLZ tBHZ tOH DQ8 to DQ1 (Output) Valid Data Output tBLZ Valid Data Output tBHZ tOH DQ16 to DQ9 (Output) Valid Data Output Note : This timing diagram assumes CE2 = H and WE = H. 14 MB82DP02183C-65L (4) READ Timing #4 (Page Address Access after CE1 Control Access) tRC Address (A20 to A3) tRC Address Valid tPRC Address Valid tPRC Address Valid tPRC Address (A2 to A0) tASC Address Valid Address Valid tPAA tCHAH tPAA tPAA CE1 tCE tCHZ OE LB, UB tCLZ tOH tOH tOH tOH DQ (Output) Valid Data Output (Normal Access) Note : This timing diagram assumes CE2 = H and WE = H. Valid Data Output (Page Access) 15 MB82DP02183C-65L (5) READ Timing #5 (Random and Page Address Access) tRC tAX tRC tAX Address (A20 to A3) tRC Address Valid tPRC Address Valid Address Valid tRC Address Valid tPRC Address Valid Address (A2 to A0) Address Valid tAA tPAA tAA tPAA CE1 LOW tASO tOE OE tBA LB, UB tOLZ tOH tOH tOH tOH DQ (Output) tBLZ Valid Data Output (Normal Access) Valid Data Output (Page Access) Notes : • This timing diagram assumes CE2 = H and WE = H. • Either or both LB and UB must be Low when both CE1 and OE are Low. 16 MB82DP02183C-65L (6) WRITE Timing #1 (Basic Timing) tWC Address tAS Address Valid tCW tWR tAS CE1 tCP tAS tWP tWR tAS WE tAS tWR tWHP tBW tAS LB, UB tOHCL tBHP OE tDS tDH DQ (Input) Valid Data Input Note : This timing diagram assumes CE2 = H. 17 MB82DP02183C-65L (7) WRITE Timing #2 (WE Control) tWC tWC Address Address Valid Address Valid tOHAH CE1 Low tAS tWP tWR tAS tWHP tWP tWR WE LB, UB tOES OE tOHZ tDS tDH tDS tDH DQ (Input) Valid Data Input Valid Data Input Note : This timing diagram assumes CE2 = H. 18 MB82DP02183C-65L (8) WRITE Timing #3-1 (WE, LB, UB Byte Write Control) tWC tWC Address Address Valid Address Valid CE1 Low tAS tWP tAS tWP WE tWR tWHP tBS tBH LB tBS tBH tWR UB tDS tDH DQ8 to DQ1 (Input) tDS tDH DQ16 to DQ9 (Input) Valid Data Input Valid Data Input Note : This timing diagram assumes CE2 = H and OE = H. 19 MB82DP02183C-65L (9) WRITE Timing #3-2 (WE, LB, UB Byte Write Control) tWC tWC Address Address Valid Address Valid CE1 Low tWR tWR WE tAS tBW tWHP tBS tBH LB tBH tAS tBW tBS UB tDS tDH DQ8 to DQ1 (Input) tDS tDH DQ16 to DQ9 Valid Data Input (Input) Valid Data Input Note : This timing diagram assumes CE2 = H and OE = H. 20 MB82DP02183C-65L (10) WRITE Timing #3-3 (WE, LB, UB Byte Write Control) tWC tWC Address Address Valid Address Valid CE1 Low WE tAS tBW tWR tWHP tBS tBH LB tBS tBH tAS tBW tWR UB tDS tDH DQ8 to DQ1 (Input) tDS tDH DQ16 to DQ9 Valid Data Input (Input) Valid Data Input Note : This timing diagram assumes CE2 = H and OE = H. 21 MB82DP02183C-65L (11) WRITE Timing #3-4 (WE, LB, UB Byte Write Control) tWC tWC Address Address Valid Address Valid CE1 Low WE tAS tBW tWR tBHP tBWO tDS tDH tDS tDH tAS tBW tWR LB DQ8 to DQ1 (Input) tAS Valid Data Input tBW tWR tAS Valid Data Input tBWO tBW tWR UB tDS tDH tBHP tDS tDH DQ16 to DQ9 (Input) Valid Data Input Valid Data Input Note : This timing diagram assumes CE2 = H and OE = H. 22 MB82DP02183C-65L (12) READ / WRITE Timing #1-1 (CE1 Control) tWC tRC Address tCHAH CE1 tCP tAS Write Address tWR tCW tASC Read Address tCHAH tCE tCP WE UB, LB tOHCL OE tCHZ tOH DQ tDS tDH tCLZ tOH Read Data Output Write Data Input Read Data Output Notes : • This timing diagram assumes CE2 = H. • Write address is valid from either CE1 or WE of last falling edge. 23 MB82DP02183C-65L (13) READ / WRITE Timing #1-2 (CE1, WE, OE Control) tWC tRC Address tCHAH CE1 tCP tAS Write Address tWR tASC Read Address tCHAH tCE tCP tWP WE UB, LB tOHCL OE tCHZ tOH DQ tDS tDH tOLZ tOH tOE Read Data Output Write Data Input Read Data Output Notes : • This timing diagram assumes CE2 = H. • OE can be fixed Low during write operation if it is CE1 controlled write at Read-Write-Read sequence. 24 MB82DP02183C-65L (14) READ / WRITE Timing #2 (OE, WE Control) tWC tRC Address Write Address Read Address tAA tOHAH CE1 Low tAS WE tOES tWP tWR tOHAH UB, LB tASO OE tOHZ tOH DQ tDS tDH tOLZ tOH tOE tWHOL tOHZ Read Data Output Write Data Input Read Data Output Notes : • This timing diagram assumes CE2 = H. • CE1 can be tied to Low for WE and OE controlled operation. 25 MB82DP02183C-65L (15) READ / WRITE Timing #3 (OE, WE, LB, UB Control) tWC tRC Address Write Address Read Address tAA tOHAH CE1 Low tOHAH WE tOES UB, LB tBHZ tASO tAS tBW tWR tBA OE tOH DQ tDS tDH tWHOL tBHZ tBLZ tOH Read Data Output Write Data Input Read Data Output Notes : • This timing diagram assumes CE2 = H. • CE1 can be tied to Low for WE and OE controlled operation. (16) POWER-UP Timing #1 CE1 tCHS tC2LH CE2 tCHH VDD 0V VDD Min Note : The tC2LH specifies after VDD reaches specified minimum level. 26 MB82DP02183C-65L (17) POWER-UP Timing #2 CE1 tCHH CE2 VDD 0V VDD Min Note : The tCHH specifies after VDD reaches specified minimum level and applicable both CE1 and CE2. If transition time of VDD (from 0 V to VDD Min) is longer than 50 ms, POWER-UP Timing #1 must be applied. (18) POWER DOWN Entry and Exit Timing CE1 tCHS CE2 tCSP tC2LP High-Z tCHH (tCHHP) DQ Power Down Entry Power Down Mode Power Down Exit Note : This Power Down mode can be also used as a reset timing if “POWER-UP timing” above could not be satisfied and Power Down program was not performed prior to this reset. 27 MB82DP02183C-65L (19) Standby Entry Timing after Read or Write CE1 tCHOX tCHWX OE WE Active (Read) Standby Active (Write) Standby Note : Both tCHOX and tCHWX define the earliest entry timing for Standby mode. 28 MB82DP02183C-65L (20) POWER DOWN PROGRAM Timing tRC tWC MSB*1 tWC MSB*1 tWC MSB*1 tWC MSB*1 tRC Key*2 Address MSB*1 tCP tCP tCP tCP tCP tCP*3 CE1 OE WE LB, UB DQ*3 RDa RDa RDa X X RDb Cycle #1 Cycle #2 Cycle #3 Cycle #4 Cycle #5 Cycle #6 *1 : The all address inputs must be High from Cycle #1 to #5. *2 : The address key must confirm the format specified in “■ POWER DOWN”. If not, the operation and data are not guaranteed. *3 : After tCP following Cycle #6, the Power Down Program is completed and returned to the normal operation. 29 MB82DP02183C-65L ■ BONDING PAD INFORMATION Please contact local FUJITSU representative for pad layout and pad coordinate information. ■ ORDERING INFORMATION Part Number MB82DP02183C-65LWT MB82DP02183C-65LPBT Shipping Form / Package Wafer 71-ball plastic FBGA (BGA-71P-M03) Remarks 30 MB82DP02183C-65L ■ PACKAGE DIMENSION 71-ball plastic FBGA Ball pitch Package width × package length Lead shape Sealing method Ball size Mounting height 0.80 mm 7.00 × 11.00 mm Soldering ball Plastic mold ∅0.45 mm 1.20 mm Max. 0.14 g (BGA-71P-M03) Weight 71-ball plastic FBGA (BGA-71P-M03) 11.00±0.10(.433±.004) 0.20(.008) S B 1.09 .043 +0.11 –0.10 +.004 –.004 B (Seated height) 0.80(.031) REF A 0.40(.016) REF 0.80(.031) REF 8 7 6 5 4 3 2 1 MLKJHGFEDCBA 7.00±0.10 (.276±.004) 0.40(.016) REF 0.10(.004) S INDEX-MARK AREA S 0.39±0.10 (Stand off) (.015±.004) 0.20(.008) S A 71-ø0.45 +0.10 –0.05 +.004 71-ø.018 –.002 ø0.08(.003) M S AB 0.10(.004) S C 2003 FUJITSU LIMITED B71003S-c-1-1 Dimensions in mm (inches). Note: The values in parentheses are reference values. 31 MB82DP02183C-65L FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party’s intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. Edited Business Promotion Dept. F0604