MB85R256H

FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256H ■ DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package Copyright©2006 FUJITSU LIMITED All rights reserved MB85R256H ■ PIN ASSIGNMENTS (TOP VIEW) A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 (FPT-28P-M17) (FPT-28P-M03) OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 (FPT-28P-M19) 2 MB85R256H ■ PIN DESCRIPTIONS Pin No. 10 to 1 11 to 13, 15 to 19 20 27 22 28 14 Pin name A0 to A14 I/O0 to I/O7 CE WE OE VCC GND Address Input Data input/output Chip enable input Write Enable input Output enable input Power supply ( + 3.3 V Typ) Ground Function 3 MB85R256H ■ BLOCK DIAGRAM A14 to A10 Block decoder A14 to A0 Address latch A7 to A0 Row decoder FRAM array: 32,768 x 8 CE Pseudo-SRAM interface logic circuit A8, A9 Column decoder WE Control logic I/O latch bus driver I/O0-I/O7 I/O0 I/O7 to OE ■ FUNCTION LIST Operation mode Standby precharge Latch address Write Read Output Disable CE H × L L L × L H H H L H WE × L OE × L I/O7 to I/O0 High-Z ⎯ Data input Data output High-Z Operation (ICC) Power supply current Standby (ISB) ⎯ H: High level, L: Low level, x: Irrespective of “H” or “L” 4 MB85R256H ■ ABSOLUTE MAXIMUM RANGES Parameter Power supply voltage Input voltage Output voltage Operating temperature Storage temperature Symbol VCC VIN VOUT TA Tstg Rating Min − 0.5 − 0.5 − 0.5 − 40 − 40 Max + 4.0 VCC + 0.5 VCC + 0.5 + 85 + 125 Unit V V V °C °C WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Power supply voltage High level input voltage Low level input voltage Operating temperature Symbol VCC VIH VIL TA Value Min 2.7 0.8 × VCC − 0.5 − 40 Typ 3.3 ⎯ ⎯ ⎯ Max 3.6 VCC + 0.5 + 0.6 + 85 Unit V V V °C WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 5 MB85R256H ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics (within recommended operating conditions) Parameter Input leakage current Output leakage current Operating power supply current Standby current High level output voltage Low level output voltage Symbol | ILI | | ILO | Conditions VIN = 0 V to VCC VOUT = 0 V to VCC, CE = VIH or OE = VIH CE = 0.2 V, Other Inputs = VCC − 0.2 V/0.2 V, tRC (Min), Ii/o = 0 mA CE, WE, OE ≥ VCC IOH = − 100 µA IOL = 1.0 mA Value Min ⎯ ⎯ ⎯ ⎯ 0.8 × VCC ⎯ Typ ⎯ ⎯ 5 5 ⎯ ⎯ Max 10 10 Unit µA µA mA µA V V ICC ISB VOH VOL 10 100 ⎯ 0.4 2. AC Characteristics (1) Read cycle (within recommended operating conditions) Parameter Read cycle time CE active time Read pulse width Precharge time Address setup time Address hold time CE access time OE access time CE output floating time OE output floating time Symbol tRC tCA tRP tPC tAS tAH tCE tOE tHZ tOHZ Value Min 150 70 70 80 0 25 ⎯ ⎯ ⎯ ⎯ Max ⎯ 2,000 2,000 ⎯ ⎯ ⎯ 70 70 25 25 ns Unit 6 MB85R256H (2) Write cycle (within recommended operating conditions) Parameter Write cycle time CE active time Write pulse width Precharge time Address setup time Address hold time Data setup time Data hold time Write set up time Write hold time (3) Power ON/OFF sequence (within recommended operating conditions) Parameter CE LEVEL hold time at power OFF CE LEVEL hold time at power ON Power interval Symbol tpd tpu tpi Value Min 80 80 1 Typ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ Unit ns ns s Symbol tWC tCA tWP tPC tAS tAH tDS tDH tWS tWH Value Min 150 70 70 80 0 25 50 0 0 0 Max ⎯ 2,000 2,000 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns Unit 3. Pin Capacitance Parameter Input capacitance output capacitance Symbol CIN COUT Conditions VIN = VOUT = GND, f = 1 MHz, TA = + 25 °C Value Min ⎯ ⎯ Typ ⎯ ⎯ Max 10 10 Unit pF pF 4. AC Characteristics Test Condition Power supply voltage Input voltage amplitude Input rising time Input falling time Input evaluation level Output evaluation level Output load : 2.7 V to 3.6 V : 0.3 V to 2.7 V : 10 ns : 10 ns : 2.0 V/0.8 V : 2.0 V/0.8 V : 100 pF 7 MB85R256H ■ TIMING DIAGRAM 1. Read cycle (CE Control) tRC tPC tCA tPC CE tAS tAH tAS Valid tRC tPC tAH A14 to A0 tPC Valid OE tRP tOE tOHZ Valid tHZ High-Z I/O7 to I/O0 Valid High-Z tCE WE : Don't care. “H” level 2. Read cycle (OE Control) tRC tPC tCA tPC CE tAS tAH tAS Valid tRC tPC tAH A14 to A0 Valid tPC OE tRP tOE tOHZ Valid tHZ High-Z I/O7 to I/O0 Valid High-Z tCE WE : Don't care. “H” level 8 MB85R256H 3. Write cycle (CE Control) tWC tPC tCA tPC CE tAS tAH tWC tWS tWP tDS tDH Valid tDS Valid tDH tWH tAS Valid tPC tWS tAH A14 to A0 tWH Valid tPC WE Data In OE “H” level : Don't care. 4. Write cycle (WE Control) tWC tPC tCA tPC CE tAS tAH tWC tWS tWP tDS tDH Valid tDS Valid tDH tWH tAS Valid tPC tWS tAH A14 to A0 tWH Valid tPC WE Data In OE “H” level : Don't care. 9 MB85R256H ■ POWER ON/OFF SEQUENCE tpd VCC 3.0 V VIH (Min) 1.0 V VIL (Max) 0.2 V GND CE > VCC × 0.8* CE CE : Don't Care CE > VCC × 0.8* CE tpi tpu VCC 3.0 V VIH (Min) 1.0 V VIL (Max) 0.2 V GND * : CE (Max) < VCC + 0.5 V ■ NOTES ON USE After IR reflow, the hold of data that was written before IR reflow is not guaranteed. ■ ORDERING INFORMATION Part number MB85R256HPF MB85R256HPFTN MB85R256HPFCN Package 28-pin, plastic SOP (FPT-28P-M17) 28-pin, plastic TSOP(1) (FPT-28P-M03) 28-pin, plastic TSOP(1) (FPT-28P-M19) Cu Lead Frame Remarks 10 MB85R256H ■ PACKAGE DIMENSIONS 28-pin plastic SOP Lead pitch Package width × package length Lead shape Sealing method Mounting height Weight 1.27 mm 8.6 × 17.75 mm Gullwing Plastic mold 2.80 mm MAX 0.82 g P-SOP28-8.6×17.75-1.27 (FPT-28P-M17) Code (Reference) 28-pin plastic SOP (FPT-28P-M17) +0.25 +.010 Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. 0.17 –0.04 15 +0.03 +.001 *1 17.75 –0.20 .699 –.008 28 .007 –.002 11.80±0.30 (.465±.012) INDEX *2 8.60±0.20 (.339±.008) Details of "A" part 2.65±0.15 (Mounting height) (.104±.006) 0.25(.010) 1 14 "A" 0~8˚ 1.27(.050) 0.47±0.08 (.019±.003) 0.13(.005) M 0.80±0.20 (.031±.008) 0.88±0.15 (.035±.006) 0.20±0.15 (.008±.006) (Stand off) 0.10(.004) C 2002 FUJITSU LIMITED F28048S-c-3-4 Dimensions in mm (inches). Note: The values in parentheses are reference values. (Continued) 11 MB85R256H 28-pin plastic TSOP (I) Lead pitch Lead shape Sealing method Lead bend direction 0.55 mm Gullwing Plastic mold Normal bend (FPT-28P-M03) 28-pin plastic TSOP (I) (FPT-28P-M03) 22 21 Details of "A" part 0.15(.006) MAX INDEX 28 LEAD No. "A" 1 0.35(.014) MAX 0.15(.006) 0.25(.010) 7 8 13.40±0.20 (.528±.008) 11.80±0.20 (.465±.008) 0.15±0.05 (.006±.002) 0.55(.0217) TYP 0.50±0.10 (.020±.004) 8.00±0.20 (.315±.008) 7.15(.281)REF 1.10 –0.05 +0.10 +.004 .043 –.002 (Mounting height) 0(0)MIN (STAND OFF) 0.20±0.10 (.008±.004) 0.09(.004) M 0.10(.004) 12.40±0.20 (.488±.008) C 1997 FUJITSU LIMITED F28018S-5C-3 Dimensions in mm (inches). Note: The values in parentheses are reference values. (Continued) 12 MB85R256H (Continued) 28-pin plastic TSOP (1) Lead pitch Package width × package length Lead shape Sealing method Mounting height Weight 0.55 mm 11.80 × 8.00 mm Gullwing Plastic mold 1.20 mm Max Approx. 0.25 g P-TSOP(1)28-11.8×8-0.55 (FPT-28P-M19) Code (Reference) 28-pin plastic TSOP (1) (FPT-28P-M19) 22 21 28 INDEX LEAD No. 1 7 8 0.15±0.05 (.006±.002) 13.40±0.20 (.528±.008) 11.80±0.20 (.465±.008) 0.55(.0217) TYP 0.50±0.10 (.020±.004) 8.00±0.20 (.315±.008) 0.00(.000) Min (Stand off) 1.10 –0.05 .043 –.002 (Mounting height) +0.10 +.004 0.10(.004) 12.40±0.20 (.488±.008) 7.15(.281) REF 0.20±0.10 (.008±.004) 0.09(.004) M C 2005 FUJITSU LIMITED F28062S-c-3-3 Dimensions in mm (inches). Note: The values in parentheses are reference values. 13 MB85R256H FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party’s intellectual property right or other right by using such information. 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Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. Edited Business Promotion Dept. F0606