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MB85R4001ANC-GE1

MB85R4001ANC-GE1

  • 厂商:

    FUJITSU(富士通)

  • 封装:

    TFSOP48

  • 描述:

    IC FRAM 4MBIT PARALLEL 48TSOP

  • 数据手册
  • 价格&库存
MB85R4001ANC-GE1 数据手册
FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit (512 K × 8) MB85R4001A ■ DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R4001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES : 524,288 words × 8 bits : 1010 times / byte : 10 years ( + 55 °C), 55 years ( + 35 °C) : 3.0 V to 3.6 V : Operating power supply current 15 mA (Typ) Standby current 50 μA (Typ) • Operation ambient temperature range : − 40 °C to + 85 °C • Package : 48-pin plastic TSOP (FPT-48P-M48) RoHS compliant • • • • • Bit configuration Read/write endurance Data retention Operating power supply voltage Low power operation Copyright©2011-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2013.2 MB85R4001A ■ PIN ASSIGNMENTS (TOP VIEW) A11 A9 NC A8 A13 WE CE2 A15 A18 VDD NC NC VSS NC NC VDD A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 OE NC VSS A10 CE1 NC I/O8 I/O7 I/O6 I/O5 I/O4 VDD NC I/O3 I/O2 I/O1 DNU DNU DNU A0 A1 VSS A2 A3 (FPT-48P-M48) ■ PIN DESCRIPTIONS Pin Number Pin Name 1, 2, 4, 5, 8, 9, 17 to 26, 28, 29, 45 A0 to A18 33 to 35, 38 to 42 I/O1 to I/O8 Data Input/Output pins 44 CE1 Chip Enable 1 Input pin 7 CE2 Chip Enable 2 Input pin 6 WE Write Enable Input pin 48 OE Output Enable Input pin 10, 16, 37 VDD Supply Voltage pins Connect all three pins to the power supply. 13, 27, 46 VSS Ground pins Connect all three pins to ground. 3, 11, 12, 14, 15, 36, 43, 47 NC No Connect pins Leave these pins open, or connect to VDD or VSS. 30 to 32 DNU Do Not Use pins Make sure to connect these pins to ground. 2 Functional Description Address Input pins DS501-00005-3v0-E MB85R4001A ■ BLOCK DIAGRAM Address Latch Row Decoder A0 FRAM Array 524,288 × 8 A18 Column Decoder S/A intWE intOE I/O1 to I/O8 I/O8 CE2 CE1 WE OE I/O1 ■ FUNCTIONAL TRUTH TABLE Operation Mode Standby Precharge CE1 CE2 WE OE H X X X X L X X X X H H H L I/O1 to I/O8 Supply Current Hi-Z Standby (ISB) H Read L Read (Pseudo-SRAM, OE control*1) L Data Output H H Operation (IDD) H Write L H L Write (Pseudo-SRAM, WE control*2) L Data Input H Note: L = VIL, H = VIH, X can be either VIL, VIH, or : Latch address and latch data at falling edge, H , Hi-Z = High Impedance : Latch address and latch data at rising edge *1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read. *2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write. DS501-00005-3v0-E 3 MB85R4001A ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Min Max Unit Power Supply Voltage* VDD − 0.5 + 4.0 V Input Pin Voltage* VIN − 0.5 VDD + 0.5 ( ≤ 4.0) V VOUT − 0.5 VDD + 0.5 ( ≤ 4.0) V TA − 40 + 85 °C TSTG − 55 + 125 °C Output Pin Voltage* Operation Ambient Temperature Storage Temperature * : All voltages are referenced to VSS (ground 0 V). WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Power Supply Voltage* VDD 3.0 3.3 3.6 V High Level Input Voltage* VIH VDD × 0.8 ⎯ VDD + 0.5( ≤ 4.0) V Low Level Input Voltage* VIL − 0.5 ⎯ + 0.6 V Operation Ambient Temperature TA − 40 ⎯ + 85 °C * : All voltages are referenced to VSS (ground 0 V). WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. 4 DS501-00005-3v0-E MB85R4001A ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Symbol Condition (within recommended operating conditions) Value Unit Min Typ Max Input Leakage Current*1 |ILI| VIN = 0 V to VDD ⎯ ⎯ 10 μA Output Leakage Current |ILO| VOUT = 0 V to VDD, CE1 = VIH or OE = VIH ⎯ ⎯ 10 μA Operating Power Supply Current*2 IDD CE1 = 0.2 V, CE2 = VDD−0.2 V, Iout = 0 mA ⎯ 15 20 mA ⎯ 50 150 μA VDD × 0.8 ⎯ ⎯ V ⎯ ⎯ 0.4 V CE1 ≥ VDD−0.2 V Standby Current*3 ISB CE2 ≤ 0.2 V OE ≥ VDD−0.2 V, WE ≥ VDD−0.2 V High Level Output Voltage VOH IOH = −1.0 mA Low Level Output Voltage VOL IOL = 2.0 mA *1 : This also applies to DNU pins. *2 : During the measurement of IDD, the Address and Data In were taken to only change once per active cycle. Iout: output current *2 : All pins other than setting pins shall be input at the CMOS level voltages such as H ≥ VDD − 0.2 V, L ≤ 0.2 V. DS501-00005-3v0-E 5 MB85R4001A 2. AC Characteristics • AC Test Conditions Power Supply Voltage Operation Ambient Temperature Input Voltage Amplitude Input Rising Time Input Falling Time Input Evaluation Level Output Evaluation Level Output Load Capacitance : 3.0 V to 3.6 V : −40 °C to +85 °C : 0.3 V to 2.7 V : 5 ns : 5 ns : 2.0 V / 0.8 V : 2.0 V / 0.8 V : 50 pF (1) Read Cycle Parameter Symbol Value Min Max Unit Read Cycle Time tRC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns CE2 Active Time tCA2 120 ⎯ ns OE Active Time tRP 120 ⎯ ns Precharge Time tPC 20 ⎯ ns Address Setup Time tAS 0 ⎯ ns Address Hold Time tAH 50 ⎯ ns OE Setup Time tES 0 ⎯ ns Output Hold Time tOH 0 ⎯ ns Output Set Time tLZ 30 ⎯ ns CE1 Access Time tCE1 ⎯ 120 ns CE2 Access Time tCE2 ⎯ 120 ns OE Access Time tOE ⎯ 120 ns Output Floating Time tOHZ ⎯ 20 ns (2) Write Cycle Parameter Symbol Value Min Max Unit Write Cycle Time tWC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns CE2 Active Time tCA2 120 ⎯ ns Precharge Time tPC 20 ⎯ ns Address Setup Time tAS 0 ⎯ ns Address Hold Time tAH 50 ⎯ ns Write Pulse Width tWP 120 ⎯ ns Data Setup Time tDS 0 ⎯ ns Data Hold Time tDH 50 ⎯ ns Write Setup Time tWS 0 ⎯ ns 6 DS501-00005-3v0-E MB85R4001A 3. Pin Capacitance Parameter Input Capacitance Symbol CIN Output Capacitance COUT DNU Pin Input Capacitance CDNU DS501-00005-3v0-E Condition VDD = VIN = VOUT = 0 V, f = 1 MHz, TA = +25 °C Value Unit Min Typ Max ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF 7 MB85R4001A ■ TIMING DIAGRAMS 1. Read Cycle Timing (CE1 Control) tRC tCA1 tPC CE1 CE2 tAS A0 to A18 tAH Valid H or L tES tRP OE tCE1 tOH tLZ I/O1 to I/O8 tOHZ Hi-Z Valid Invalid Invalid :H or L 2. Read Cycle Timing (CE2 Control) CE1 tRC tPC tCA2 CE2 tAS A0 to A18 tAH Valid H or L tES tRP OE tCE2 tOH tLZ I/O1 to I/O8 tOHZ Hi-Z Valid Invalid Invalid :H or L 8 DS501-00005-3v0-E MB85R4001A 3. Read Cycle Timing (OE Control) CE1 CE2 tAS A0 to A18 tAH Valid H or L tRC tPC tRP OE tOE tOHZ tOH tLZ I/O1 to I/O8 Hi-Z Valid Invalid Invalid :H or L 4. Write Cycle Timing (CE1 Control) tWC tCA1 tPC CE1 CE2 tAS A0 to A18 tAH Valid H or L tWS tWP WE tDS tDH Hi-Z Valid Data In H or L :H or L DS501-00005-3v0-E 9 MB85R4001A 5. Write Cycle Timing (CE2 Control) CE1 tWC tPC tCA2 CE2 tAS A0 to A18 tAH Valid H or L tWS tWP WE tDS tDH Hi-Z Valid Data In H or L :H or L 6. Write Cycle Timing (WE Control) CE1 CE2 tAS A0 to A18 tAH Valid H or L tWC tWP tPC WE tDS tDH Hi-Z Data In Valid H or L :H or L 10 DS501-00005-3v0-E MB85R4001A ■ POWER ON/OFF SEQUENCE tPD tR tPU VDD VDD CE2 CE2 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) CE2 ≤ 0.2 V 0V 0V CE1 > VDD × 0.8* CE1 > VDD × 0.8* CE1 : Don't Care CE1 CE1 * : CE1 (Max) < VDD + 0.5 V Parameter Value Symbol Min Typ Max Unit CE1 level hold time for Power OFF tPD 85 ⎯ ⎯ ns CE1 level hold time for Power ON tPU 85 ⎯ ⎯ ns Power supply rising time tR 0.05 ⎯ 200 ms If the device does not operate within the specified conditions of read cycle, write cycle or power on/off sequence, memory data can not be guaranteed. In case the power is turned on or off, use the power supply reset IC and fix the CE2 to low level, to prevent unexpected writing. Use either of CE1 or CE2, or both to disable control of the device. ■ FRAM CHARACTERISTICS Item Min Max Read/Write Endurance*1 1010 ⎯ 10 ⎯ 55 ⎯ Data Retention*2 Unit Parameter Times/byte Operation Ambient Temperature TA = + 85 °C Years Operation Ambient Temperature TA = + 55 °C Operation Ambient Temperature TA = + 35 °C *1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates with destructive readout mechanism. *2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values are calculated by qualification results. ■ NOTES ON USE Data written before performing IR reflow is not guaranteed after IR reflow. DS501-00005-3v0-E 11 MB85R4001A ■ ESD AND LATCH-UP Test DUT Value ESD HBM (Human Body Model) JESD22-A114 compliant ≥ |2000 V| ESD MM (Machine Model) JESD22-A115 compliant ≥ |200 V| ESD CDM (Charged Device Model) JESD22-C101 compliant ⎯ Latch-Up (I-test) JESD78 compliant MB85R4001ANC-GE1 Latch-Up (Vsupply overvoltage test) JESD78 compliant ⎯ ⎯ Latch-Up (Current Method) Proprietary method ≥ |300 mA| Latch-Up (C-V Method) Proprietary method ⎯ • Current method of Latch-Up Resistance Test Protection Resistor A Test terminal IIN VIN VDD + DUT - VSS VDD (Max.Rating) V Reference terminal Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow. Confirm the latch up does not occur under IIN = ± 300 mA. In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be increased to the level that meets the specific requirement. 12 DS501-00005-3v0-E MB85R4001A • C-V method of Latch-Up Resistance Test Protection Resistor A 1 Test 2 terminal SW + VIN V - C 200pF VDD DUT VDD (Max.Rating) VSS Reference terminal Note : Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is considered as one cycle. Repeat this process 5 times. However, if the latch-up condition occurs before completing 5 times, this test must be stopped immediately. DS501-00005-3v0-E 13 MB85R4001A ■ REFLOW CONDITIONS AND FLOOR LIFE Item Condition Method IR (infrared reflow) , Convection Times 2 Before unpacking Please use within 2 years after production. From unpacking to 2nd reflow Within 8 days In case over period of floor life Baking with 125 °C+/-3 °C for 24hrs+2hrs/-0hrs is required. Then please use within 8 days. (Please remember baking is up to 2 times) Floor life Floor life condition Between 5 °C and 30 °C and also below 70%RH required. (It is preferred lower humidity in the required temp range.) Reflow Profile 260°C 255°C Liquidous Temperature 170 °C ~ 190 °C (b) RT (c) (a) (a) Average ramp-up rate (b) Preheat & Soak (c) Average ramp-up rate (d) Peak temperature (d’) Liquidous temperature (e) Cooling (d) (e) (d') : 1 °C/s to 4 °C/s : 170 °C to 190 °C, 60 s to 180 s : 1 °C/s to 4 °C/s : Temperature 260 °C Max; 255 °C within 10 s : Up to 230 °C within 40 s or Up to 225 °C within 60 s or Up to 220 °C within 80 s : Natural cooling or forced cooling Note : Temperature on the top of the package body is measured. 14 DS501-00005-3v0-E MB85R4001A ■ RESTRICTED SUBSTANCES This product complies with the regulations below (Based on current knowledge as of November 2011). • EU RoHS Directive (2002/95/EC) • China RoHS (Administration on the Control of Pollution Caused by Electronic Information Products ( )) • Vietnam RoHS (30/2011/TT-BCT) Restricted substances in each regulation are as follows. Substances Threshold Contain status* Lead and its compounds 1,000 ppm ❍ Mercury and its compounds 1,000 ppm ❍ 100 ppm ❍ Hexavalent chromium compound 1,000 ppm ❍ Polybrominated biphenyls (PBB) 1,000 ppm ❍ Polybrominated diphenyl ethers (PBDE) 1,000 ppm ❍ Cadmium and its compounds * : The mark of “❍” shows below a threshold value. DS501-00005-3v0-E 15 MB85R4001A ■ ORDERING INFORMATION Part Number MB85R4001ANC-GE1 16 Package Shipping form Minimum shipping quantity 48-pin plastic TSOP (FPT-48P-M48) Tray 1 DS501-00005-3v0-E MB85R4001A ■ PACKAGE DIMENSIONS 48-pin plastic TSOP Lead pitch 0.50 mm Package width × package length 12.00 mm × 12.40 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.20 mm MAX Weight 0.36 g (FPT-48P-M48) Note 1) # : Resin protrusion. (Each side : +0.15 (.006) Max). Note 2) * : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. 48-pin plastic TSOP (FPT-48P-M48) 0.10±0.05 (.004±.002) (STAND OFF) 1 48 0.50(.020) INDEX #12.00±0.10 (.472±.004) +0.05 0.22 –0.04 (.009 +.002 –.002 ) 24 0.10(.004) M 25 1.13±0.07 (.044±.003) (MOUNTING HEIGHT) Details of A part 14.00±0.20(.551±.008) *12.40±0.10(.488±.004) 0.25(.010) +0.05 0.145 –0.03 (.006 +.002 –.001 ) C 0.08(.003) 2010 FUJITSU SEMICONDUCTOR LIMITED F48048Sc-1-1 DS501-00005-3v0-E A 0.60±0.15 (.024±.006) 0~8 Dimensions in mm (inches). Note: The values in parentheses are reference values. 17 MB85R4001A ■ MARKING [MB85R4001ANC-GE1] JAPAN MB85R4001A 1150 E00 E1 [FPT-48P-M48] 18 DS501-00005-3v0-E MB85R4001A ■ SHIPPING FORM 1. Tray 1.1 Tray Dimensions TSOP48, 56 (I) Maximum storage capacity PKG code pcs/tray pcs/inner box pcs/outer box 128 1280 5120 322.6 315 15 × 19.0 = 285 15 15 8-NO HOLES 7.62 1.27 7 × 14.9 = 104.3 135.9 15.8 FPT-48P-M48 25.4 25.4 R4.7 255.3 1 13.564 12.2 10 8 1.27 1 1 1 SEC.A-A 1 10 19 15.8 1 1 8 0.9 1.27 1 15 0.9 1.27 1.27 7.62 7.62 2 1.27 15.564 14.2 11.8 10 2 34.3 C 5 B A 0.76 C3 2.54 A 15.8 B 14.9 SEC.B-B 2002-2010 FUJITSU SEMICONDUCTOR LIMITED TSOP (1) 12 × 14 : JHB-TS1-1214-1-D-3 (Dimensions in mm) Material : Conductive polyphenyleneether Heat proof temperature : 125 °C MAX Weight : 133 g DS501-00005-3v0-E 19 MB85R4001A 1.2 IEC (JEDEC) TRAY Dry Pack Packing Specifications Product (IC) Tray Index mark IC Chamfered corner Tray *5 Humidity indicator Desiccant *5 Label I *1*4*5 *5 Dry pack ↓ Inner box Heat seal Binding band or tape Aluminum laminated bag *5 Filled tray + one empty tray Cushioning material *5 Inner box *5 *5 Binding band or tape Label I *1*4*5 Cushioning material *5 Outer box Outer box *2*3*5 Use adhesive tapes. *5 Label II-A *4*5 Label II-B *4*5 *1: For a product of witch part number is suffixed with "E1", a " G bag and the inner boxes. Pb " marks is display to the moisture barrier *2: The size of the outer box may be changed depending on the quantity of inner boxes. *3: The space in the outer box will be filled with empty inner boxes, or cushions, etc. *4: Please refer to an attached sheet about the indication label. *5: The packing materials except tray may differ slightly from the color and dimensions depend on country of manufacture. Note: The packing specifications may not be applied when the product is delivered via a distributer. 20 DS501-00005-3v0-E MB85R4001A 1.3 Product label indicators Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping) [C-3 Label (50mm x 100mm) Supplemental Label (20mm x 100mm)] XXXXXXXXXXXXXX (Customer part number or FJ part number) C-3 Label (LEAD FREE mark) (3N)1 XXXXXXXXXXXXXX XXX (Part number and quantity) QC PASS (3N)2 XXXXXXXXXX XXXXXX (FJ control number) XXX pcs XXXXXXXXXXXXXX (Quantity) (Customer part number or FJ part number) (Customer part number or FJ part number bar code) XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx XXXXXXXXXXXXXX (Customer part number or FJ part number) (FJ control number bar code) XX/XX XXXX-XXX XXX (Package count) XXXX-XXX XXX XXXXXXXXXX (FJ control number ) (Lot Number and quantity) XXXXXXXXXXXXXX (Comment) Perforated line Supplemental Label Label II-A: Label on Outer box [D Label] (100mm x 100mm) D Label XXXXXXXXXXXXX (Customer Name) (CUST.) XXXXXXXXX (Delivery Address) (DELIVERY POINT) XXXXXXXXXXXXXX (TRANS.NO.) (FJ control number) XXXXXXXXXXXXXX (PART NO.) (Customer part number or FJ part number) XXX (FJ control number) XXX (FJ control number) XXX (FJ control number) XXXXXXXXXXXXXX (Part number) (PART NAME) XXXXXXXXXXXXXX (Part number) XXX/XXX (Q’TY/TOTAL Q’TY) (CUSTOMER'S REMARKS) XXXXXXXXXXXXXXXXXXXX (3N)3 XXXXXXXXXXXXXX XXX XX (UNIT) (PACKAGE COUNT) XXX/XXX (FJ control number + Product quantity) (FJ control number + Product quantity bar code) (Part number + Product quantity) (3N)4 XXXXXXXXXXXXXX XXX (Part number + Product quantity bar code) (3N)5 XXXXXXXXXX (FJ control number) (FJ control number bar code) Label II-B: Outer boxes product indicate XXXXXXXXXXXXXX (Lot Number) XXXX-XXX XXXX-XXX (Part number) (Count) X X (Quantity) XXX XXX XXX Note: Depending on shipment state, "Label II-A" and "Label II-B" on the external boxes might not be printed. DS501-00005-3v0-E 21 MB85R4001A 1.4 Dimensions for Containers (1) Dimensions for inner box H W L L W H 165 360 75 (Dimensions in mm) (2) Dimensions for outer box H W L L W H 355 385 195 (Dimensions in mm) 22 DS501-00005-3v0-E MB85R4001A ■ MAJOR CHANGES IN THIS EDITION A change on a page is indicated by a vertical line drawn on the left side of that page. Page Section Change Results ■ FEATURES Revised the Data retention 10 years ( + 55 °C) →10 years ( + 55 °C), 55 years ( + 35 °C) ■ ABSOLUTE MAXIMUM RANGES Revised the Storage Temperature − 40 °C → − 55 °C ■ POWER ON/OFF SEQUENCE Deleted the following description: “Because turning the power-on from an intermediate level cause malfunction, when the power is turned on, VDD is required to be started from 0V (see the figure below). ” 1 4 Moved the following description under the table: “If the device does not operate within the specified conditions of read cycle, write cycle or power on/off sequence, memory data can not be guaranteed. In case the power is turned on or off, use the power supply reset IC and fix the CE2 to low level, to prevent unexpected writing. Use either of CE1 or CE2, or both to disable control of the device.” 11 ■ FRAM CHARACTERISTICS DS501-00005-3v0-E Revised the table and Note 23 MB85R4001A FUJITSU SEMICONDUCTOR LIMITED Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America FUJITSU SEMICONDUCTOR AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://us.fujitsu.com/micro/ Asia Pacific FUJITSU SEMICONDUCTOR ASIA PTE. LTD. 151 Lorong Chuan, #05-08 New Tech Park 556741 Singapore Tel : +65-6281-0770 Fax : +65-6281-0220 http://sg.fujitsu.com/semiconductor/ Europe FUJITSU SEMICONDUCTOR EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/semiconductor/ FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD. 30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District, Shanghai 201204, China Tel : +86-21-6146-3688 Fax : +86-21-6146-3660 http://cn.fujitsu.com/fss/ Korea FUJITSU SEMICONDUCTOR KOREA LTD. 902 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://kr.fujitsu.com/fsk/ FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD. 2/F, Green 18 Building, Hong Kong Science Park, Shatin, N.T., Hong Kong Tel : +852-2736-3232 Fax : +852-2314-4207 http://cn.fujitsu.com/fsp/ Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited: Sales Promotion Department
MB85R4001ANC-GE1 价格&库存

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MB85R4001ANC-GE1
    •  国内价格
    • 1+150.61790

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    MB85R4001ANC-GE1
      •  国内价格
      • 1+225.18373
      • 10+204.95238

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