FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00010-6v0-E
Memory FRAM
16 K (2 K × 8) Bit I2C
MB85RC16V
■ DESCRIPTION
The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16V have at least 1012 Read/Write operation endurance per byte,
which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products.
The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike
Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is
not required.
■ FEATURES
: 2,048 words × 8 bits
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
: 1 MHz (Max)
: 1012 times / byte
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
: 3.0 V to 5.5 V
: Operating power supply current 90 μA (Typ @1 MHz)
Standby current 5 μA (Typ)
• Operation ambient temperature range: − 40 °C to + 85 °C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
•
•
•
•
•
•
•
Bit configuration
Two-wire serial interface
Operating frequency
Read/Write endurance
Data retention
Operating power supply voltage
Low power consumption
Copyright©2011-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.2
MB85RC16V
■ PIN ASSIGNMENT
(TOP VIEW)
NC
1
8
VDD
NC
2
7
WP
NC
3
6
SCL
VSS
4
5
SDA
(FPT-8P-M02)
■ PIN FUNCTIONAL DESCRIPTIONS
2
Pin
Number
Pin Name
1 to 3
NC
No Connect pins
Leave these pins open, or connect to VDD or VSS.
4
VSS
Ground pin
5
SDA
Serial Data I/O pin
This is an I/O pin which performs bidirectional communication for both memory
address and writing/reading data. It is possible to connect multiple devices. It is an
open drain output, so a pull-up resistor is required to be connected to the external
circuit.
6
SCL
Serial Clock pin
This is a clock input pin for input/output timing serial data. Data is sampled on the
rising edge of the clock and output on the falling edge.
7
WP
Write Protect pin
When the Write Protect pin is the “H” level, writing operation is disabled. When the
Write Protect pin is the “L” level, the entire memory region can be overwritten.
Reading operation is always enabled regardless of the Write Protect pin input level.
The write protect pin is internally pulled down to the VSS pin and, that is recognized
as the “L” level (write enabled) when the pin is the open state.
8
VDD
Supply Voltage pin
Functional Description
DS501-00010-6v0-E
MB85RC16V
■ BLOCK DIAGRAM
Control circuit
SCL
WP
Row Decoder
Serial/Parallel Converter
Memory Address Counter
SDA
FRAM Array
2,048 × 8
Column Decoder/Sense Amp/
Write Amp
■ I2C (Inter-Integrated Circuit)
The MB85RC16V has the two-wire serial interface; the I2C bus,and operates as a slave device.
The I2C bus defines communication roles of “master” and “slave” devices, with the master side holding the
authority to initiate control. Furthermore, an I2C bus connection is possible where a single master device is
connected to multiple slave devices in a party-line configuration.
• I2C Interface System Configuration Example
VDD
Pull-up Resistors
SCL
SDA
I2C Bus
Master
DS501-00010-6v0-E
I2C Bus
MB85RC16V
I2C Bus
Other slave
3
MB85RC16V
■ I2C COMMUNICATION PROTOCOL
The I2C bus provides communication by two wires only, therefore, the SDA input should change while SCL
is the “L” level. However, when starting and stopping the communication sequence, SDA is allowed to change
while SCL is the “H” level.
• Start Condition
To start read or write operations by the I2C bus, change the SDA input from the “H” level to the “L” level while
the SCL input is in the “H” level.
• Stop Condition
To stop the I2C bus communication, change the SDA input from the “L” level to the “H” level while the SCL
input is in the “H” level. In the reading operation, inputting the stop condition finishes reading and enters the
standby state. In the writing operation, inputting the stop condition finishes inputting the rewrite data and
enters the standby state.
• Start Condition, Stop Condition
SCL
SDA
“H” or “L”
Start
Stop
Note : At the write operation, the FRAM device does not need the programming wait time (tWC) after issuing the
Stop Condition.
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DS501-00010-6v0-E
MB85RC16V
■ ACKNOWLEDGE (ACK)
In the I2C bus, serial data including memory address or memory information is sent and received in units of
8 bits. The acknowledge signal indicates that every 8 bits of the data is successfully sent and received. The
receiver side usually outputs the “L” level every time on the 9th SCL clock after each 8 bits are successfully
transmitted and received. On the transmitter side, the bus is temporarily released to Hi-Z every time on this
9th clock to allow the acknowledge signal to be received and checked. During this Hi-Z released period, the
receiver side pulls the SDA line down to indicate the “L” level that the previous 8 bits communication is
successfully received.
In case the slave side receives Stop condition before sending or receiving the ACK “L” level, the slave side
stops the operation and enters to the standby state. On the other hand, the slave side releases the bus state
after sending or receiving the NACK “H” level. The master side generates Stop condition or Start condition
in this released bus state.
• Acknowledge timing overview diagram
1
SCL
2
3
8
SDA
9
ACK
Start
The transmitter side should always release SDA on the 9th bit.
At this time, the receiver side outputs a pull-down if the
previous 8 bits data are received correctly (ACK response).
■ MEMORY ADDRESS STRUCTURE
The MB85RC16V has the memory address buffer to store the 11-bit information for the memory address.
As for byte write, page write and random read commands, the complete 11-bit memory address is configured
by inputting the memory upper address (3 bits) and the memory lower address (8 bits), and saved to the
memory address buffer. Then access to the memory is performed.
As for a current address read command, the complete 11-bit memory address is configured and saved to
the memory address buffer, by inputting the memory upper address (3 bits) and the memory lower address
(8 bits) which has saved in the memory address buffer. Then access to the memory is performed.
DS501-00010-6v0-E
5
MB85RC16V
■ DEVICE ADDRESS WORD
Following the start condition, the 8 bit device address word is input. Inputting the device address word decides
whether writing or reading operation. However, the clock is always driven by the master. The device address
word (8 bits) consists of a device Type code (4 bits), memory upper address code (3 bits), and a Read/Write
code (1 bit).
• Device Type Code (4 bits)
The upper 4 bits of the device address word are a device type code that identifies the device type, and are
fixed at “1010” for the MB85RC16V.
• Memory Upper Address Code (3 bits)
Following the device type code, the 3 bits of the memory upper address code are input.
The slave address selection is not performed by the external pin setting on this device. These 3 bits are not
the setting bits for the slave address, but the upper 3-bit setting bits for the memory address.
• Read/Write Code (1 bit)
The 8th bit of the device address word is the R/W (Read/Write) code. When the R/W code is “0” input, a
write operation is enabled, and the R/W code is “1” input, a read operation is enabled for the MB85RC16V.
If the device code is not “1010”, the Read/Write operation is not performed and the standby state is chosen.
• Device Address Word
Start
1
2
3
4
5
6
7
8
9
1
2
..
SCL
SDA
ACK
S
1
0
1
0
Device Type Code
A2
A1
A0
Memory Upper
Address Code
R/W
A
..
Read/Write Code
Access from master
Access from slave
S Start Condition
A ACK (SDA is the "L" level)
6
DS501-00010-6v0-E
MB85RC16V
■ DATA STRUCTURE
The master inputs the device address word (8 bits) following the start condition, and then the slave outputs
the Acknowledge “L” level on the 9th bit. After confirming the Acknowledge response, the sequential 8-bit
memory lower address is input, to the byte write, page write and random read commands.
As for the current address read command, inputting the memory lower address is not performed, and the
address buffer lower 8-bit is used as the memory lower address.
When inputting the memory lower address finishes, the slave outputs the Acknowledge “L” level on the 9th
bit again.
Afterwards, the input and the output data continue in 8-bit units, and then the Acknowledge “L” level is output
for every 8-bit data.
■ FRAM ACKNOWLEDGE -- POLLING NOT REQUIRED
The MB85RC16V performs the high speed write operations, so any waiting time for an ACK* by the acknowledge polling does not occur.
*: In E2PROM, the Acknowledge Polling is performed as a progress check whether rewriting is executed or not.
It is normal to judge by the 9th bit of Acknowledge whether rewriting is performed or not after inputting the
start condition and then the device address word (8 bits) during rewriting.
■ WRITE PROTECT (WP)
The entire memory array can be write protected by setting the WP pin to the “H” level. When the WP pin is
set to the “L” level, the entire memory array will be rewritten. Reading is allowed regardless of the WP pin's
“H” level or “L” level.
Do not change the WP signal level during the communication period from the start condition to the stop
condition.
Note : The WP pin is pulled down internally to the VSS pin, therefore if the WP pin is open, the pin status is
recognized as the “L” level (write enabled).
DS501-00010-6v0-E
7
MB85RC16V
■ COMMAND
• Byte Write
If the device address word (R/W “0” input) is sent after the start condition, the slave responds with an ACK.
After this ACK, write memory addresses and write data are sent in the same way, and the write ends by
generating a stop condition at the end.
S
1 0 1 0 A2 A1 A0 0 A
XXX
Address
Low 8bits
A
Write
Data 8bits
A P
X X X X X X XX
Access from master
MSB
LSB
Access from slave
S Start Condition
P Stop Condition
A ACK (SDA is the "L" level)
• Page Write
If additional 8 bits are continuously sent after the same command (except stop condition) as Byte Write, a
page write is performed. The memory address rolls over to first memory address (000H) at the end of the
address. Therefore, if more than 2 Kbytes are sent, the data is overwritten in order starting from the start of
the memory address that was written first.
S
1 0 1 0 A2 A1 A0 0 A
Address
Low 8bits
A
Write
Data 8bits
A
Write
Data
...
A P
Access from master
Access from slave
S Start Condition
P Stop Condition
A ACK (SDA is the "L" level)
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DS501-00010-6v0-E
MB85RC16V
• Current Address Read
If the last write or read operation finishes successfully up to the end of stop condition, the memory address
that was accessed last remains in the memory address buffer (the length is 11 bits).
When sending this command without turning the power off, it is possible to read from the memory address
n+1 which adds 1 to the total 11-bit memory address n, which consists of the memory upper address 3-bit
from the device address word input and the lower 8-bit of the memory address buffer. If the memory address
n is the last address, it is possible to read with rolling over to the head of the memory address (000H). The
current address (address that the memory address buffer indicates) is undefined immediately after turning
the power on.
Access from master
Access from slave
(n+1) memory address
1 0 1 0 A2 A1 A0 1 A
S
Read
Data 8bits
N P
S Start Condition
P Stop Condition
A ACK (SDA is the "L"level)
N NACK (SDA is the "H" level)
• Random Read
The one byte of data from the memory address saved in the memory address buffer can be read out
synchronously to SCL by specifying the address in the same way as for a write, and then issuing another
start condition and sending the Device Address Word (R/W “1” input).
Setting values for the first and the second memory upper address codes should be the same (an example
is shown in below).
The final NACK (SDA is the “H” level) is issued by the receiver that receives the data. In this case, this bit is
issued by the master side.
S
1 0 1 0 A2 A1 A0 0 A
(Input example) when reading
memory address 16FH:
001B
Address
Low 8bits
01101111B
A S
1 0 1 0 A2 A1 A0 1 A
Read
Data 8bits
N P
001B
Access from master
Access from slave
S Start Condition
P Stop Condition
A ACK (SDA is the "L" level)
N NACK (SDA is the "H" level)
DS501-00010-6v0-E
9
MB85RC16V
• Sequential Read
Data can be received continuously following the Device address word (R/W “1” input) after specifying the
address in the same way as for Random Read. If the read reaches the end of address, the read address
automatically rolls over to the first memory address (000H) and keeps reading.
...
A
Read
Data 8bits
A
Read
Data
...
A
Read
Data 8bits
N P
Access from master
Access from slave
P Stop Condition
A ACK (SDA is the "L" level)
N NACK (SDA is the "H" level)
■ SOFTWARE RESET SEQUENCE OR COMMAND RETRY
In case the malfunction has occurred after power on, the master side stopped the I2C communication during
processing, or unexpected malfunction has occurred, execute the following (1) software recovery sequence
just before each command, or (2) retry command just after failure of each command.
(1) Software Reset Sequence
Since the slave side may be outputting “L” level, do not force to drive “H” level, when the master side drives
the SDA port. This is for preventing a bus conflict. The additional hardware is not necessary for this software
reset sequence.
9 set of “Start Conditions and one “1” data”
SCL
SDA
Hi-Z state by pull up Resistor
Send “Start Condition and one data “1”” .
Repeat these 9 times just before Write or Read command.
(2) Command Retry
Command retry is useful to recover from failure response during I2C communication.
10
DS501-00010-6v0-E
MB85RC16V
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Min
Max
Unit
Power supply voltage*
VDD
− 0.5
+ 6.0
V
Input voltage*
VIN
− 0.5
VDD + 0.5 ( ≤ 6.0)
V
VOUT
− 0.5
VDD + 0.5 ( ≤ 6.0)
V
TA
− 40
+ 85
°C
TSTG
− 55
+ 125
°C
Output voltage*
Operation ambient temperature
Storage temperature
*: These parameters are based on the condition that Vss is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Typ
Max
Unit
Power supply voltage*
VDD
3.0
⎯
5.5
V
“H” level input voltage*
VIH
VDD × 0.8
⎯
5.5
V
“L” level input voltage*
VIL
VSS
⎯
VDD × 0.2
V
Operation ambient temperature
TA
− 40
⎯
+ 85
°C
*: These parameters are based on the condition that Vss is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS501-00010-6v0-E
11
MB85RC16V
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value
Min
Typ
Max
Unit
|ILI|
VIN = 0 V to VDD
⎯
⎯
1
μA
Output leakage current*
|ILO|
VOUT = 0 V to VDD
⎯
⎯
1
μA
Operating power supply current
IDD
SCL = 400 kHz
⎯
40
80
μA
SCL = 1000 kHz
⎯
90
130
μA
Input leakage current*1
2
Standby current
ISB
“L” level output voltage
VOL
Input resistance for WP pin
RIN
SCL, SDA = VDD
WP = 0 V or VDD or OPEN
TA = + 25 °C in stop condition
IOL = 3 mA
⎯
5
10
μA
⎯
⎯
0.4
V
VIN = VIL (Max)
50
⎯
⎯
kΩ
VIN = VIH (Min)
1
⎯
⎯
MΩ
*1: Applicable pin: SCL,SDA
*2: Applicable pin: SDA
12
DS501-00010-6v0-E
MB85RC16V
2. AC Characteristics
Value
Parameter
Symbol
STANDARD MODE
FAST MODE
FAST MODE PLUS
Min
Max
Min
Max
Min
Max
Unit
SCL clock frequency
FSCL
0
100
0
400
0
1000
kHz
Clock high time
THIGH
4000
⎯
600
⎯
400
⎯
ns
Clock low time
TLOW
4700
⎯
1300
⎯
600
⎯
ns
SCL/SDA rising time
Tr
⎯
1000
⎯
300
⎯
300
ns
SCL/SDA falling time
Tf
⎯
300
⎯
300
⎯
100
ns
Start condition hold
THD:STA
4000
⎯
600
⎯
250
⎯
ns
Start condition setup
TSU:STA
4700
⎯
600
⎯
250
⎯
ns
SDA input hold
THD:DAT
20
⎯
20
⎯
20
⎯
ns
SDA input setup
TSU:DAT
250
⎯
100
⎯
100
⎯
ns
SDA output hold
TDH:DAT
0
⎯
0
⎯
0
⎯
ns
Stop condition setup
TSU:STO
4000
⎯
600
⎯
250
⎯
ns
SDA output access after
SCL falling
TAA
⎯
3000
⎯
900
⎯
550
ns
Pre-charge time
TBUF
4700
⎯
1300
⎯
500
⎯
ns
⎯
50
ns
Noise suppression time
TSP
⎯
50
⎯
50
(SCL and SDA)
AC characteristics were measured under the following measurement conditions.
Power supply voltage : STANDARD MODE and FAST MODE
: FAST MODE PLUS
3.0 V to 5.5 V
4.5 V to 5.5 V
Operation ambient temperature: − 40 °C to + 85 °C
Input voltage amplitude: VDD × 0.2 to VDD × 0.8
Input rising time
: 5 ns
Input falling time
: 5 ns
Input judge level
: VDD/2
Output judge level
: VDD/2
DS501-00010-6v0-E
13
MB85RC16V
3. AC Timing Definitions
TSU:DAT
SCL
VIH
Start
VIL
SDA
THD:DAT
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
TSU:STA THD:STA
TSU:STO
Tr
THIGH
SCL
Stop
VIH
Tf
TLOW
VIH
VIL
VIL
VIH
VIH
VIL
VIL
VIH
SDA
Stop
VIH
VIL
Start
VIH
VIL
VIH
VIL
VIL
TBUF
Tr
T
TDH:DAT f
TAA
Tsp
VIH
SCL
VIL
VIL
VIH
SDA
VIL
Valid
VIH
VIL
VIL
1/FSCL
4. Pin capacitance
Parameter
Symbol
Conditions
I/O capacitance
CI/O
Input capacitance
CIN
VDD = VIN = VOUT = 0V,
f = 1 MHz, TA = + 25 °C
Value
Min
Typ
Max
Unit
⎯
⎯
15
pF
⎯
⎯
15
pF
5. AC Test Load Circuit
5.5 V
1.8 kΩ
Output
100 pF
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DS501-00010-6v0-E
MB85RC16V
■ POWER ON/OFF SEQUENCE
tf
tpd
tOFF
tr
tpu
VDD
VDD
2.7 V
2.7 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
0V
0V
SDA, SCL > VDD × 0.8 *
SDA, SCL
SDA, SCL : Don't care
SDA, SCL > VDD × 0.8 *
SDA, SCL
* : SDA, SCL (Max) < VDD + 0.5 V
Parameter
Symbol
SDA, SCL level hold time during power down
SDA, SCL level hold time during power up
Value
Unit
Min
Max
tpd
85
⎯
ns
tpu
85
⎯
ns
Power supply rising time
tr
0.5
50
ms
Power supply falling time
tf
0.01
50
ms
tOFF
50
⎯
ms
Power off time
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Item
Min
Max
Read/Write Endurance*1
1012
⎯
Times/byte Operation Ambient Temperature TA = + 85 °C
10
⎯
Operation Ambient Temperature TA = + 85 °C
95
⎯
≥ 200
⎯
2
Data Retention*
Unit
Years
Parameter
Operation Ambient Temperature TA = + 55 °C
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
Data written before performing IR reflow is not guaranteed after IR reflow.
DS501-00010-6v0-E
15
MB85RC16V
■ ESD AND LATCH-UP
Test
DUT
Value
ESD HBM (Human Body Model)
JESD22-A114 compliant
≥ |2000 V|
ESD MM (Machine Model)
JESD22-A115 compliant
≥ |200 V|
ESD CDM (Charged Device Model)
JESD22-C101 compliant
≥ |1000 V|
Latch-Up (I-test)
JESD78 compliant
MB85RC16VPNF-G-JNE1
Latch-Up (Vsupply overvoltage test)
JESD78 compliant
⎯
⎯
Latch-Up (Current Method)
Proprietary method
≥ |300 mA|
Latch-Up (C-V Method)
Proprietary method
⎯
• Current method of Latch-Up Resistance Test
Protection Resistor
A
Test terminal
IIN
VIN
VDD
+
DUT
-
VSS
VDD
(Max.Rating)
V
Reference
terminal
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under IIN = ± 300 mA.
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
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MB85RC16V
• C-V method of Latch-Up Resistance Test
Protection Resistor
A
1
Test
2 terminal
SW
+
VIN
V
-
C
200pF
VDD
DUT
VDD
(Max.Rating)
VSS
Reference
terminal
Note : Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is
considered as one cycle.
Repeat this process 5 times. However, if the latch-up condition occurs before completing 5 times, this
test must be stopped immediately.
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MB85RC16V
■ REFLOW CONDITIONS AND FLOOR LIFE
Item
Condition
Method
IR (infrared reflow) , Convection
Times
2
Before unpacking
Please use within 2 years after production.
From unpacking to 2nd reflow
Within 8 days
In case over period of floor life
Baking with 125 °C+/-3 °C for
24hrs+2hrs/-0hrs is required.
Then please use within 8 days.
(Please remember baking is up to 2 times)
Floor life
Floor life condition
Between 5 °C and 30 °C and also below 70%RH required.
(It is preferred lower humidity in the required temp range.)
Reflow Profile
260°C
255°C
Liquidous
Temperature
170 °C
to
190 °C
(b)
RT
(c)
(a)
(a) Average ramp-up rate
(b) Preheat & Soak
(c) Average ramp-up rate
(d) Peak temperature
(d’) Liquidous temperature
(e) Cooling
(d)
(e)
(d')
: 1 °C/s to 4 °C/s
: 170 °C to 190 °C, 60 s to 180 s
: 1 °C/s to 4 °C/s
: Temperature 260 °C Max; 255 °C within 10 s
: Up to 230 °C within 40 s or
Up to 225 °C within 60 s or
Up to 220 °C within 80 s
: Natural cooling or forced cooling
Note : Temperature on the top of the package body is measured.
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MB85RC16V
■ RESTRICTED SUBSTANCES
This product complies with the regulations below (Based on current knowledge as of November 2011).
• EU RoHS Directive (2002/95/EC)
• China RoHS (Administration on the Control of Pollution Caused by Electronic Information Products
(
))
• Vietnam RoHS (30/2011/TT-BCT)
Restricted substances in each regulation are as follows.
Substances
Threshold
Contain status*
Lead and its compounds
1,000 ppm
❍
Mercury and its compounds
1,000 ppm
❍
100 ppm
❍
Hexavalent chromium compound
1,000 ppm
❍
Polybrominated biphenyls (PBB)
1,000 ppm
❍
Polybrominated diphenyl ethers (PBDE)
1,000 ppm
❍
Cadmium and its compounds
* : The mark of “❍” shows below a threshold value.
DS501-00010-6v0-E
19
MB85RC16V
■ ORDERING INFORMATION
Package
Shipping form
Minimum shipping
quantity
MB85RC16VPNF-G-JNE1*
8-pin, plastic SOP
(FPT-8P-M02)
Tube
1
MB85RC16VPNF-G-JNERE1*
8-pin, plastic SOP
(FPT-8P-M02)
Embossed Carrier tape
1500
MB85RC16VPNF-G-JNN1E1
8-pin, plastic SOP
(FPT-8P-M02)
Tube
1
MB85RC16VPNF-G-JNN1ERE1
8-pin, plastic SOP
(FPT-8P-M02)
Embossed Carrier tape
1500
Part number
* : These part numbers are not recommended to use for new design.
20
DS501-00010-6v0-E
MB85RC16V
■ PACKAGE DIMENSION
8-pin plastic SOP
Lead pitch
1.27 mm
Package width ×
package length
3.9 mm × 5.05 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
1.75 mm MAX
Weight
0.06 g
(FPT-8P-M02)
8-pin plastic SOP
(FPT-8P-M02)
+0.25
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+.010
+0.03
*1 5.05 –0.20 .199 –.008
0.22 –0.07
+.001
.009 –.003
8
5
*2 3.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005)
0~8°
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
DS501-00010-6v0-E
21
MB85RC16V
■ MARKING
[MB85RC16VPNF-G-JNE1]
[MB85RC16VPNF-G-JNERE1]
RC16V
E11150
300
[FPT-8P-M02]
22
DS501-00010-6v0-E
MB85RC16V
■ PACKING INFORMATION
1. Tube
1.1 Tube Dimensions
• Tube/stopper shape
Tube
Transparent polyethylene terephthalate
(treated to antistatic)
Stopper
(treated to antistatic)
Tube length: 520 mm
Tube cross-sections and Maximum quantity
Maximum quantity
Package form
Package code
FPT-8P-M02
SOP, 8, plastic (2)
pcs/
tube
pcs/inner
box
pcs/outer
box
95
7600
30400
1.8
2.6
7.4
6.4
4.4
©2006-2010 FUJITSU SEMICONDUCTOR LIMITED
C 2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1
F08008-SET1-PET:FJ99L-0022-E0008-1-K-3
t = 0.5
Transparent polyethylene terephthalate
(Dimensions
in mm)
DS501-00010-6v0-E
23
MB85RC16V
1.2 Tube Dry pack packing specifications
IC
Tube
Stopper
For SOP
Index mark
Label I *1*3
Aluminum Iaminated bag
Heat seal
Dry pack
Desiccant
Humidity indicater
Aluminum Iaminated bag
(tubes inside)
Inner box
Cushioning material
Inner box
Label I
*1*3
Cushioning material
Outer box*2
Outer box
Use adhesive tapes.
Label II-A *3
Label II-B *3
*1: For a product of witch part number is suffixed with “E1”, a “ G
bag and the inner boxes.
Pb
” marks is display to the moisture barrier
*2: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*3: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributer.
24
DS501-00010-6v0-E
MB85RC16V
1.3 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
DS501-00010-6v0-E
25
MB85RC16V
1.4 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
L
W
H
540
125
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
565
270
180
(Dimensions in mm)
26
DS501-00010-6v0-E
MB85RC16V
2. Emboss Tape
2.1 Tape Dimensions
PKG code
FPT-8P-M02
Maximum storage capacity
Reel No
3
pcs/reel
pcs/inner box
pcs/outer box
1500
1500
10500
ø1.5 +0.1
–0
8±0.1
1.75±0.1
2±0.05
4±0.1
B
0.3±0.05
A
B
A
5.5±0.1
12 +0.3
–0.1
5.5±0.05
ø1.5 +0.1
–0
SEC.B-B
2.1±0.1
6.4±0.1
0.4
3.9±0.2
SEC.A-A
C
2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1
(Dimensions in mm)
Material : Conductive polystyrene
Heat proof temperature : No heat resistance.
Package should not be baked
by using tape and reel.
DS501-00010-6v0-E
27
MB85RC16V
2.2 IC orientation
• ER type
Index mark
(User Direction of Feed)
(User Direction of Feed)
(Reel side)
2.3 Reel dimensions
Reel cutout dimensions
E
∗
D
C
B
A
W1
W2
r
W3
∗:
Reel No
Hub unit width dimensions
1
2
3
4
5
6
7
8
Tape width
8
12
16
24
Symbol
A
254 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2
C
13 ± 0.2
D
21 ± 0.8
E
10
11
44
12
13
56
12
Dimensions in mm
14
15
16
24
330 ± 2
150 +2
-0
100 +2
-0
150 +2
-0
100 +2
-0
100 ± 2
13 +0.5
-0.2
20.5 +1
-0.2
2 ± 0.5
W1
8.4 +2
-0
W2
less than
14.4
less than 18.4
less than 22.4
less than 30.4
less than 38.4
less than 50.4
less than
62.4
less than
18.4
less than
22.4
less than
30.4
W3
7.9 ~ 10.9
11.9 ~ 15.4
15.9 ~ 19.4
23.9 ~ 27.4
31.9 ~ 35.4
43.9 ~ 47.4
55.9 ~
59.4
12.4 ~
14.4
16.4 ~
18.4
24.4 ~
26.4
r
28
32
100 +2
-0
100 +2
-0
B
9
12.4 +2
-0
16.4 +2
-0
24.4 +2
-0
32.4 +2
-0
44.4 +2
-0
+0.1
56.4 +2
12.4 +1
16.4 +1
-0
-0
-0 24.4 -0
1.0
DS501-00010-6v0-E
MB85RC16V
2.4 Taping (φ330mm Reel) Dry Pack Packing Specifications
Outside diameter: φ 330mm reel
Label I *1, *4
Embossed
tapes
Label I *1, *4
Desiccant
Humidity indicator
Aluminum laminated bag
Dry pack
Label I *1, *4
Heat seal
Inner box
Inner box
Label I *1, *4
Taping
Outer box *2, *3
Outer box
Use adhesive tapes.
Label II-A *4
Label II-B *4
*1: For a product of witch part number is suffixed with “E1”, a “ G
bag and the inner boxes.
Pb
” marks is display to the moisture barrier
*2: The size of the outer box may be changed depending on the quantity of inner boxes.
*3: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*4: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributer.
DS501-00010-6v0-E
29
MB85RC16V
2.5 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
30
DS501-00010-6v0-E
MB85RC16V
2.6 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
Tape width
L
W
H
12, 16
24, 32
44
40
365
50
345
65
56
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
415
400
315
(Dimensions in mm)
DS501-00010-6v0-E
31
MB85RC16V
■ MAJOR CHANGES IN THIS EDITION
A change on a page is indicated by a vertical line drawn on the left side of that page.
Page
Section
Change Results
■ FEATURES
1
11
Revised the Data retention
10 years ( + 85 °C)
→10 years ( + 85 °C), 95 years ( + 55 °C),
over 200 years ( + 35 °C)
■ ABSOLUTE MAXIMUM RANGES Revised the Storage Temperature
− 40 °C → − 55 °C
■ POWER ON/OFF SEQUENCE
Revised the following description:
“POWER ON SEQUENCE”
→ “POWER ON/OFF SEQUENCE”
Deleted the following description:
“VDD pin is required to be rising from 0V because turning the
power-on from an intermediate level may cause malfunctions,
when the power is turned on.”
15
Added the following description:
“If the device does not operate within the specified conditions
of read cycle, write cycle or power on/off sequence, memory
data can not be guaranteed.”
■ FRAM CHARACTERISTICS
32
Revised the table and Note
DS501-00010-6v0-E
MB85RC16V
MEMO
DS501-00010-6v0-E
33
MB85RC16V
MEMO
34
DS501-00010-6v0-E
MB85RC16V
MEMO
DS501-00010-6v0-E
35
MB85RC16V
FUJITSU SEMICONDUCTOR LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-0033, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fsl/en/
For further information please contact:
North and South America
FUJITSU SEMICONDUCTOR AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://us.fujitsu.com/micro/
Asia Pacific
FUJITSU SEMICONDUCTOR ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://sg.fujitsu.com/semiconductor/
Europe
FUJITSU SEMICONDUCTOR EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.
30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District,
Shanghai 201204, China
Tel : +86-21-6146-3688 Fax : +86-21-6146-3660
http://cn.fujitsu.com/fss/
Korea
FUJITSU SEMICONDUCTOR KOREA LTD.
902 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fsk/
FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.
2/F, Green 18 Building, Hong Kong Science Park,
Shatin, N.T., Hong Kong
Tel : +852-2736-3232 Fax : +852-2314-4207
http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does
not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any
third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right
by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or
other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in
weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations
of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
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湘ICP备2023018690号
