MB85RC64TAPNF-G-BDERE1

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00044-2v0-E Memory FRAM 64 K (8 K × 8) Bit I2C MB85RC64TA ■ DESCRIPTION The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 1013 cycles, significantly outperforming Flash memory and E2PROM in the number. The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM. ■ FEATURES : 8,192 words × 8 bits : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). : 3.4 MHz (Max @HIGH SPEED MODE) 1 MHz (Max @FAST MODE PLUS) Read/write endurance : 1013 times / byte Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C) Operating power supply voltage : 1.8 V to 3.6 V Low power consumption : Operating power supply current 170 μA (Typ @3.4 MHz) Standby current 8 μA (Typ) Sleep current 4 μA (Typ) Operation ambient temperature range : − 40 °C to + 85 °C Package : 8-pin plastic SOP (FPT-8P-M09) 8-pin plastic SON (LCC-8P-M04) RoHS compliant • Bit configuration • Two-wire serial interface • Operating frequency • • • • • • Copyright 2016 FUJITSU SEMICONDUCTOR LIMITED 2016.10 MB85RC64TA ■ PIN ASSIGNMENT (TOP VIEW) (TOP VIEW) 1 A0 8 VDD A1 2 7 WP A2 3 6 SCL 4 VSS 5 A0 1 8 VDD A1 2 7 WP A2 3 6 SCL VSS 4 5 SDA SDA (FPT-8P-M09) (LCC-8P-M04) ■ PIN FUNCTIONAL DESCRIPTIONS Pin Number 2 Pin Name Functional Description 1 to 3 A0 to A2 Device Address pins The MB85RC64TA can be connected to the same data bus up to 8 devices. Device addresses are used in order to identify each of these devices. Connect these pins to VDD pin or VSS pin externally. Only if the combination of VDD and VSS pins matches a Device Address Code inputted from the SDA pin, the device operates. In the open pin state, A0, A1 and A2 pins are internally pulleddown and recognized as the “L” level. 4 VSS Ground pin 5 SDA Serial Data I/O pin This is an I/O pin which performs bidirectional communication for both memory address and writing/reading data. It is possible to connect multiple devices. It is an open drain output, so a pull-up resistor is required to be connected to the external circuit. 6 SCL Serial Clock pin This is a clock input pin for input/output serial data. Data is sampled on the rising edge of the clock and output on the falling edge. 7 WP Write Protect pin When the Write Protect pin is the “H” level, the writing operation is disabled. When the Write Protect pin is the “L” level, the entire memory region can be overwritten. The reading operation is always enabled regardless of the Write Protect pin input level. The Write Protect pin is internally pulled down to VSS pin, and that is recognized as the “L” level (write enabled) when the pin is the open state. 8 VDD Supply Voltage pin DS501-00044-2v0-E MB85RC64TA ■ BLOCK DIAGRAM Control Logic SCL WP Row Decoder Serial/Parallel Converter Address Counter SDA FRAM Array 8,192 × 8 Column Decoder/Sense Amp/ Write Amp A0, A1, A2 ■ I2C (Inter-Integrated Circuit) The MB85RC64TA has the two-wire serial interface; the I2C bus, and operates as a slave device. The I2C bus defines communication roles of “master” and “slave” devices, with the master side holding the authority to initiate control. Furthermore, an I2C bus connection is possible where a single master device is connected to multiple slave devices in a party-line configuration. In this case, it is necessary to assign a unique device address to the slave device, the master side starts communication after specifying the slave to communicate by addresses. • I2C Interface System Configuration Example VDD Pull-up Resistors SCL SDA I2C Bus Master I2C Bus MB85RC64TA A2 0 A1 0 A0 0 I2C Bus MB85RC64TA A2 0 A1 0 A0 1 I2C Bus MB85RC64TA A2 0 A1 1 ... A0 0 Device address DS501-00044-2v0-E 3 MB85RC64TA ■ I2C COMMUNICATION PROTOCOL The I2C bus is a two wire serial interface that uses a bidirectional data bus (SDA) and serial clock (SCL). A data transfer can only be initiated by the master, which will also provide the serial clock for synchronization. The SDA signal should change while the SCL is the “L” level. However, as an exception, when starting and stopping communication sequence, the SDA is allowed to change while the SCL is the “H” level. • Start Condition To start read or write operations by the I2C bus, change the SDA input from the “H” level to the “L” level while the SCL input is in the “H” level. • Stop Condition To stop the I2C bus communication, change the SDA input from the “L” level to the “H” level while the SCL input is in the “H” level. In the reading operation, inputting the stop condition finishes reading and enters the standby state. In the writing operation, inputting the stop condition finishes inputting the rewrite data and enters the standby state. • Start Condition, Stop Condition SCL SDA “H” or “L” Start Stop Note : At the write operation, the FRAM device does not need the programming wait time (tWC) after issuing the Stop Condition. 4 DS501-00044-2v0-E MB85RC64TA ■ ACKNOWLEDGE (ACK) In the I2C bus, serial data including address or memory information is sent in units of 8 bits. The acknowledge signal indicates that every 8 bits of the data is successfully sent and received. The receiver side usually outputs the “L” level every time on the 9th SCL clock after each 8 bits are successfully transmitted and received. On the transmitter side, the bus is temporarily released to Hi-Z every time on this 9th clock to allow the acknowledge signal to be received and checked. During this Hi-Z-released period, the receiver side pulls the SDA line down to indicate the “L” level that the previous 8 bits communication is successfully received. In case the slave side receives Stop condition before sending or receiving the ACK “L” level, the slave side stops the operation and enters to the standby state. On the other hand, the slave side releases the bus state after sending or receiving the NACK “H” level. The master side generates Stop condition or Start condition in this released bus state. • Acknowledge timing overview diagram 1 SCL 2 3 8 SDA 9 ACK Start DS501-00044-2v0-E The transmitter side should always release SDA on the 9th bit. At this time, the receiver side outputs a pull-down if the previous 8 bits data are received correctly (ACK response). 5 MB85RC64TA ■ DEVICE ADDRESS WORD (Slave address) Following the start condition, the master sends the 8 bits device address word to start I2C communication. The device address word (8 bits) consists of a device Type code (4 bits), device address code (3 bits), and a read/write code (1 bit). • Device Type Code (4 bits) The upper 4 bits of the device address word are a device type code that identifies the device type, and are fixed at “1010” for the MB85RC64TA. • Device Address Code (3 bits) Following the device type code, the 3 bits of the device address code are input in order of A2, A1 and A0. The device address code identifies one device from up to eight devices connected to the bus. Each MB85RC64TA is given a unique 3 bits code on the device address pin (external hardware pin A2, A1 and A0). The slave only responds if the received device address code is equal to this unique 3 bits code. • Read/Write Code (1 bit) The 8th bit of the device address word is the R/W (read/write) code. When the R/W code is “0”, a write operation is enabled, and the R/W code is “1”, a read operation is enabled for the MB85RC64TA. It turns to a stand-by state if the device code is not “1010” or device address code does not equal to pins A2, A1 and A0. • Device Address Word Start 1 2 3 4 5 6 7 8 9 1 2 .. SCL SDA ACK S 1 0 1 Device Code 0 A2 A1 A0 R/W A .. Device Address Code Read/Write Code Access from master Access from slave S Start Condition A ACK (SDA is the "L" level) 6 DS501-00044-2v0-E MB85RC64TA ■ DATA STRUCTURE In the I2C bus, the acknowledge “L” level is output on the 9th bit by a slave, after the 8 bits of the device address word following the start condition are input by a master. After confirming the acknowledge response by the master, the master outputs 8 bits × 2 memory address to the slave. When the each memory address input ends, the slave again outputs the acknowledge “L” level. After this operation, the I/O data follows in units of 8 bits, with the acknowledge “L” level output after every 8 bits. It is determined by the R/W code whether the data line is driven by the master or the slave. However, the clock line shall be driven by the master. For a write operation, the slave will accept 8 bits from the master, then send an acknowledge. If the master detects the acknowledge, the master will transfer the next 8 bits. For a read operation, the slave will place 8 bits on the data line, then wait for an acknowledge from the master. ■ FRAM ACKNOWLEDGE -- POLLING NOT REQUIRED The MB85RC64TA performs write operations at the same speed as read operations, so any waiting time for an ACK polling* does not occur. The write cycle takes no additional time. *: In E2PROM, the Acknowledge Polling is performed as a progress check whether rewriting is executed or not. It is normal to judge by the 9th bit of Acknowledge whether rewriting is performed or not after inputting the start condition and then the device address word (8 bits) during rewriting. ■ WRITE PROTECT (WP) The entire memory array can be write protected using the Write Protect pin. When the Write Protect pin is set to the “H” level, the entire memory array will be write protected. When the Write Protect pin is the “L” level, entire memory array will be rewritten. Reading is allowed regardless of the WP pin's “H” level or “L” level. Note : The Write Protect pin is pulled down internally to VSS pin, therefore if the Write Protect pin is open, the pin status is detected as the “L” level (write enabled). DS501-00044-2v0-E 7 MB85RC64TA ■ COMMAND • Byte Write If the device address word (R/W “0” input) is sent following the start condition, the slave responds with an ACK. After this ACK, write addresses and data are sent in the same way, and the write ends by generating a stop condition at the end. S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A 0 00XXXXX Address Low 8bits A Write Data 8bits A P X X X X X X XX Access from master MSB LSB Access from slave S Start Condition P Stop Condition A ACK (SDA is the "L" level) Note : In the MB85RC64TA, input “000” as the upper 3 bits of the MSB. • Page Write If additional 8 bits are continuously sent after the same command (except stop condition) as Byte Write, a page write is performed. The memory address rolls over to first memory address (0000H) at the end of the address. Therefore, if more than 8 Kbytes are sent, the data is overwritten in order starting from the start of the memory address that was written first. Because FRAM performs the high-speed write operations, the data will be written to FRAM right after the ACK response finished. S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A Address Low 8bits A Write Data 8bits A Write Data ... A P Access from master Access from slave S Start Condition P Stop Condition A ACK (SDA is the "L" level) Note : It is not necessary to take a period for internal write operation cycles from the buffer to the memory after the stop condition is generated. 8 DS501-00044-2v0-E MB85RC64TA • Current Address Read When the previous write or read operation finishes successfully up to the stop condition and assumes the last accessed address is “n”, then the address at “n+1” is read by sending the following command unless turning the power off. If the memory address is last address, the address counter will roll over to 0000H. The current address in memory address buffer is undefined immediately after the power is turned on. Access from master Access from slave S Start Condition (n+1) address S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits N P P Stop Condition A ACK(SDA is the "L" level) N NACK (SDA is the "H" level) • Random Read The one byte of data from the memory address saved in the memory address buffer can be read out synchronously to SCL by specifying the address in the same way as for a write, and then issuing another start condition and sending the Device Address Word (R/W “1” input). The final NACK is issued by the receiver that receives the data. In this case, this bit is issued by the master side. S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A Address Low 8bits A S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits N P Access from master Access from slave S Start Condition P Stop Condition A ACK (SDA is the "L" level) N NACK (SDA is the "H" level) DS501-00044-2v0-E 9 MB85RC64TA • Sequential Read Data can be received continuously following the Device address word (R/W “1” input) after specifying the address in the same way as for Random Read. If the read reaches the end of address, the internal read address automatically rolls over to first memory address 0000H and keeps reading. ... A Read Data 8bits A Read Data ... A Read Data 8bits N P Access from master Access from slave P Stop Condition A ACK (SDA is the "L" level) N NACK (SDA is the "H" level) 10 DS501-00044-2v0-E MB85RC64TA • High Speed Mode MB85RC64TA supports High Speed mode up to 3.4 MHz. By sending an entry command (0000 1XXX) after start condition from the master side, it informs to the slave that the data transmission with High Speed mode will start. Since there is no slave side which is allowed to respond to this entry command, NACK response continues from the slave side. After the master side recognizes this NACK response, the master side changes its state to High Speed mode and enables the bidirectional communication up to 3.4 MHz. By sending Stop condition, it exits out of the state in High Speed communication. Byte Write @High Speed Mode S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A Address Low 8bits A Write Data 8bits A P Address High 8bits A Address Low 8bits A Write Data 8bits A Read Data 8bits N P Page Write @High Speed Mode S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A Write Data ... A P Current Address Read @High Speed Mode S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 1 A Random Address Read @High Speed Mode S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A Address Low 8bits A S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits N P Address High 8bits A Address Low 8bits A S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits A Sequential Read @High Speed Mode S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A ... A Read Data 8bits A Read Data ... A Read Data 8bits ... N P Access from master Standard Mode Fast Mode Fast Mode Plus DS501-00044-2v0-E High Speed Mode Access from slave S Start Condition P Stop Condition ACK(SDA is the “L” level) NACK(SDA is the “H” level) A A N N 11 MB85RC64TA • Sleep Mode MB85RC64TA provides Sleep mode which reduces less current consumption than Standby mode, by stooping the internal regulator circuits. Following sequences enable the Sleep mode transition. a) The master sends start condition followed by F8H. b) After ACK response from slave, the master sends the device address word. In this device address word, Read/Write code are Don't care. c) After ACK response from slave, the master re-sends the start condition followed by 86H. d) The slave moves to Sleep mode after ACK response to the master. S 1 1 1 1 1 0 0 0 A 1 0 1 0 A2 A1 A0 R/W A S 1 0 0 0 0 1 1 0 A P Access from master Access from slave S Start Condition P Stop Condition A ACK(SDA is the “L” level) Even if the MB85RC64TA stays in the Sleep mode, SDA and SCL signals are monitored. Following sequences enable the transition to Standby mode after recovery time (tREC) of internal regulator circuits. a) The master sends start condition followed by device address word. In this device address word, Read/Write code are Don't care. b) At the rising edge of 9th clock from start condition, an internal regulator starts to operate its recovery sequence. c) After the recovery time (tREC) passed, standby mode enabled. After returning to Standby mode, reading and writing are enabled by sending each command starts with start condition. S 1 0 1 0 A2 A1 A0 R/W X Recovery operation S 1 0 1 0 A2 A1 A0 R/W A ͐ Access from master Start recovery operation Access from slave 12 S Start Condition A ACK(SDA is the “L” level) DS501-00044-2v0-E MB85RC64TA • Device ID The Device ID command reads fixed Device ID. The size of Device ID is 3 bytes and consists of manufacturer ID and product ID. The Device ID is read-only and can be read out by following sequences. a) The master sends the Reserved Slave ID F8H after the START condition. b) The master sends the device address word after the ACK response from the slave. In this device address word, R/W code are “Don't care”. c) The master re-sends the START condition followed by the Reserved Slave ID F9H after the ACK response from the slave. d) The master read out the Device ID succeedingly in order of Data Byte 1st / 2nd / 3rd after the ACK response from the slave. e) The master responds the NACK (SDA is the “H” level) after reading 3 bytes of the Device ID. In case the master respond the ACK after reading 3 bytes of the Device ID, the master re-reading the Device ID from the 1st byte. Reserved Reserved R S Slave ID A 1 0 1 0 A2 A1 A0 / A S Slave ID A Data Byte A Data Byte A Data Byte N P W 1st 2nd 3rd (F9H) (F8H) Access from master Access from slave S Start Condition P Stop Condition A ACK (SDA is the "L" level) N NACK (SDA is the "H" level) Data Byte 1st Manufacture ID = 00AH Data Byte 2nd Data Byte 3rd Product ID = 358H 11 10 9 8 7 6 5 4 3 Fujitsu Semiconductor 2 1 0 11 10 9 8 Density = 3H 7 6 5 4 3 2 Proprietary use 1 0 0 0 0 0 1 0 0 0 1 0 0 0 0 DS501-00044-2v0-E 0 0 0 0 1 0 1 1 1 1 0 13 MB85RC64TA ■ SOFTWARE RESET SEQUENCE OR COMMAND RETRY In case the malfunction has occurred after power on, the master side stopped the I2C communication during processing, or unexpected malfunction has occurred, execute the following (1) software recovery sequence just before each command, or (2) retry command just after failure of each command. (1) Software Reset Sequence Since the slave side may be outputting “L” level, do not force to drive “H” level, when the master side drives the SDA port. This is for preventing a bus conflict. The additional hardware is not necessary for this software reset sequence. 9 set of “Start Conditions and one “1” data” SCL SDA Hi-Z state by pull up Resistor Send “Start Condition and one data “1””. Repeat these 9 times just before Write or Read command. (2) Command Retry Command retry is useful to recover from failure response during I2C communication. 14 DS501-00044-2v0-E MB85RC64TA ■ ABSOLUTE MAXIMUM RATINGS Parameter Rating Symbol Min Max Unit Power supply voltage* VDD − 0.5 + 4.0 V Input voltage* VIN − 0.5 VDD + 0.5 ( ≤ 4.0) V VOUT − 0.5 VDD + 0.5 ( ≤ 4.0) V TA − 40 + 85 °C Tstg − 55 + 125 °C Output voltage* Operation ambient temperature Storage temperature *: These parameters are based on the condition that VSS is 0 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Power supply voltage*1 VDD 1.8 3.3 3.6 V Operation ambient temperature*2 TA − 40 ⎯ + 85 °C *1: These parameters are based on the condition that VSS is 0 V. *2: Ambient temperature when only this device is working. Please consider it to be the almost same as the package surface temperature. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. DS501-00044-2v0-E 15 MB85RC64TA ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics (within recommended operating conditions) Parameter Symbol Input leakage current*1 Output leakage current* 2 Operating power supply current Condition Value Min Typ Max Unit |ILI| VIN = 0 V to VDD ⎯ ⎯ 1 μA |ILO| VOUT = 0 V to VDD ⎯ ⎯ 1 μA SCL = 0.1 MHz ⎯ 35 ⎯ μA SCL = 1 MHz ⎯ 80 100 μA SCL = 3.4 MHz ⎯ 170 190 μA ⎯ 8 10 μA 4 6 μA IDD Standby current ISB SCL, SDA = VDD A0, A1, A2, WP = 0 V or VDD or Open Under Stop Condition Sleep current IZZ SCL, SDA = VDD A0, A1, A2, WP = 0 V “H” level input voltage VIH VDD = 1.8 V to 3.6 V VDD × 0.7 ⎯ VDD V “L” level input voltage VIL VDD = 1.8 V to 3.6 V VSS ⎯ VDD × 0.3 V “L” level output voltage VOL IOL = 3 mA ⎯ ⎯ 0.4 V Input resistance for WP, A0, A1 and A2 pins RIN VIN = VIL (Max) 50 ⎯ ⎯ kΩ VIN = VIH (Min) 1 ⎯ ⎯ MΩ *1: Applicable pin: SCL,SDA *2: Applicable pin: SDA 16 DS501-00044-2v0-E MB85RC64TA 2. AC Characteristics Value STANDARD MODE FAST MODE FAST MODE PLUS Min Max Min Max Min Max Min Max 0 100 0 400 0 4000 ⎯ 600 ⎯ TLOW 4700 ⎯ 1300 ⎯ SCL/SDA rising time Tr ⎯ 1000 ⎯ SCL/SDA falling time Tf ⎯ 300 Start condition hold THD:STA 4000 Start condition setup TSU:STA SDA input hold Parameter Symbol SCL clock frequency Unit 1000 0 3400 kHz *1 ⎯ 60 ⎯ ns *2 500 ⎯ 160 ⎯ ns 300 ⎯ 300 ⎯ 80 ns ⎯ 300 ⎯ 120 ⎯ 80 ns ⎯ 600 ⎯ 250 ⎯ 160 ⎯ ns 4700 ⎯ 600 ⎯ 250 ⎯ 160 ⎯ ns THD:DAT 0 ⎯ 0 ⎯ 0 ⎯ 0 ⎯ ns SDA input setup TSU:DAT 250 ⎯ 100 ⎯ 50 ⎯ 15*4 ⎯ ns SDA output hold TDH:DAT 0 ⎯ 0 ⎯ 0 ⎯ 0 ⎯ ns Stop condition setup TSU:STO 4000 ⎯ 600 ⎯ 250 ⎯ 160 ⎯ ns SDA output access after SCL falling TAA ⎯ 3000 ⎯ 900 ⎯ 450*3 ⎯ 130 ns Pre-charge time TBUF 4700 ⎯ 1300 ⎯ 500 ⎯ 300 ⎯ ns Noise suppression time (SCL and SDA) TSP ⎯ 50 ⎯ 50 ⎯ 50 ⎯ 5 ns Clock high time Clock low time FSCL HIGH SPEED MODE THIGH 260 *1: 300 ns @VDD ≤ 2.7 V *2: 600 ns @VDD ≤ 2.7 V *3: 550 ns @VDD ≤ 2.7 V *4: 20 ns @VDD ≤ 2.7 V AC characteristics were measured under the following measurement conditions. Power supply voltage : 1.8 V to 3.6 V Operation ambient temperature : − 40 °C to + 85 °C Input voltage magnitude : Vss to VDD Input rising time : 5 ns Input falling time : 5 ns Input judge level : VDD/2 Output judge level : VDD/2 Output load capacitance : 100 pF DS501-00044-2v0-E 17 MB85RC64TA 3. AC Timing Definitions TSU:DAT SCL VIH VIL SDA Start THD:DAT VIH VIH VIH VIH VIL VIL VIL VIL VIH VIH VIH VIH VIL VIL VIL VIL TSU:STA THD:STA TSU:STO Tr THIGH SCL Stop VIH Tf TLOW VIH VIL VIL VIH VIH VIL VIL VIH SDA Stop VIH VIL Start VIH VIL VIH VIL VIL TBUF Tr T TDH:DAT f TAA Tsp VIH SCL VIL VIL VIH SDA VIL Valid VIH VIL VIL 1/FSCL 4. Pin Capacitance Parameter Symbol Conditions I/O capacitance CI/O Input capacitance CIN VDD = 3.3 V, f = 1 MHz, TA = + 25 °C Value Unit Min Typ Max ⎯ ⎯ 8 pF ⎯ ⎯ 8 pF 5. AC Test Load Circuit 3.3 V 1.1 kΩ Output 100 pF 18 DS501-00044-2v0-E MB85RC64TA ■ POWER ON/OFF SEQUENCE tf tpd tr tpu VDD VDD VDD (Min) VDD (Min) VIH (Min) VIH (Min) VIL (Max) VIL (Max) 0V 0V SDA, SCL > VDD × 0.8 * SDA, SCL SDA, SCL : Don't care SDA, SCL > VDD × 0.8 * SDA, SCL * : SDA, SCL (Max) < VDD + 0.5 V Parameter Symbol Value Min Max Unit SDA, SCL level hold time during power down tpd 85 ⎯ ns SDA, SCL level hold time during power up tpu 250 ⎯ μs Power supply rising time tr 0.05 ⎯ ms/V Power supply falling time tf 0.1 ⎯ ms/V tREC ⎯ 400 μs Internal regulator recovery time If the device does not operate within the specified conditions of read cycle, write cycle or power on/off sequence, memory data can not be guaranteed. ■ FRAM CHARACTERISTICS Item Min Max Read/Write Endurance*1 1013 ⎯ Times/byte Operation Ambient Temperature TA = + 85 °C 10 ⎯ Operation Ambient Temperature TA = + 85 °C 95 ⎯ ≥ 200 ⎯ 2 Data Retention* Unit Years Parameter Operation Ambient Temperature TA = + 55 °C Operation Ambient Temperature TA = + 35 °C *1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates with destructive readout mechanism. *2 : Minimum values define retention time of the first reading/writing data right after shipment, and these values are calculated by qualification results. DS501-00044-2v0-E 19 MB85RC64TA ■ NOTE ON USE • We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed. • During the access period from the start condition to the stop condition, keep the level of WP, A0, A1 and A2 pins to the “H” level or the “L” level. ■ ESD AND LATCH-UP Test DUT Value ESD HBM (Human Body Model) JESD22-A114 compliant ≥ |2000 V| ESD MM (Machine Model) JESD22-A115 compliant ≥ |200 V| ESD CDM (Charged Device Model) JESD22-C101 compliant ≥ |1000 V| Latch-Up (I-test) JESD78 compliant MB85RC64TAPNF-G-BDE1 ⎯ Latch-Up (Vsupply overvoltage test) JESD78 compliant ⎯ Latch-Up (Current Method) Proprietary method ⎯ Latch-Up (C-V Method) Proprietary method ≥ |200 V| • Current method of Latch-Up Resistance Test Protection Resistance A IIN VIN Test terminal VDD + DUT - VSS VDD (Max.Rating) V Reference terminal Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow. Confirm the latch up does not occur under IIN = ± 300 mA. In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be increased to the level that meets the specific requirement. 20 DS501-00044-2v0-E MB85RC64TA • C-V method of Latch-Up Resistance Test Protection Resistance A 1 Test 2 terminal SW + VIN V - C 200pF VDD DUT VDD (Max.Rating) VSS Reference terminal Note Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is considered as one cycle. Repeat this process 5 times. However, if the latch-up condition occurs before completing 5 times, this test must be stopped immediately. ■ REFLOW CONDITIONS AND FLOOR LIFE [ JEDEC MSL ] : Moisture Sensitivity Level 3 (ISP/JEDEC J-STD-020D) ■ CURRENT STATUS ON CONTAINED RESTRICTED SUBSTANCES This product complies with the regulations of REACH Regulations, EU RoHS Directive and China RoHS. DS501-00044-2v0-E 21 MB85RC64TA ■ ORDERING INFORMATION Package Shipping form Minimum shipping quantity MB85RC64TAPNF-G-BDE1 8-pin, plastic SOP (FPT-8P-M09) Tube ⎯* MB85RC64TAPNF-G-BDERE1 8-pin, plastic SOP (FPT-8P-M09) Embossed Carrier tape 1500 MB85RC64TAPN-G-AMEWE1 8-pin, plastic SON (LCC-8P-M04) Embossed Carrier tape 1500 Part number *: Please contact our sales office about minimum shipping quantity. 22 DS501-00044-2v0-E MB85RC64TA ■ PACKAGE DIMENSION 8-pin plastic SOP 1.27 mm Lead pitch Package width × package length 3.9 mm × 4.89 mm Lead shape Gullwing Sealing method Plastic mold Mounting heigth 1.73 mm MAX Weight 0.08 g (FPT-8P-M09) 8-pin plastic SOP 㸦FPT-8P-M09㸧 Note 1) *1: These dimensions do not include resin protrution. Note 2) *2: These dimensions do not include resin protrution. 5pin 8pin 㹼 0.17MAX 3.81㹼3.99*2 0.12MAX “F” 4×R0.05 1pin 4pin 1.27(Typ) +0.063 0.42 -0.064 5.30MAX 0.22 -0.017 +0.034 0.102㹼0.254 1.55㹼1.73 1.5(Typ) 4.80㹼4.98*1 0.406㹼0.889 Details of “F” part C 2015 FUJITSU SEMICONDUCTOR LIMITED F08-17Sc Dimenssions in mm (Continued) DS501-00044-2v0-E 23 MB85RC64TA (Continued) 8-pin plastic SON Lead pitch 0.5 mm Package width × package length 2.0 mm × 3.0 mm Sealing method Plastic mold Mounting height 0.75 mm MAX Weight 0.015g (LCC-8P-M04) 8-pin plastic SON (LCC-8P-M04) 1.6±0.10 (.063±.004) 2.00±0.07 (.079±.003) 0.40±0.07 (.016±.003) 3.00±0.07 (.118±.003) 1.40±0.10 (.055±.004) INDEX AREA 1PIN CORNER (C0.30(C.012)) 0.50(.020) TYP 0.05(.002) MAX C 24 0.25±0.05 (.010±.002) 0.70±0.05 (.028±.002) 0.15(.006) 2011 FUJITSU SEMICONDUCTOR LIMITED HMbC8-04Sc-1-1 Dimensions in mm (inches). Note: The values in parentheses are reference values. DS501-00044-2v0-E MB85RC64TA ■ MARKING [MB85RC64TAPNF-G-BDE1] [MB85RC64TAPNF-G-BDERE1] C 6 4 TA 11547 701 [FPT-8P-M09] [MB85RC64TAPN-G-AMEWE1] Y Y WW C64 TA 0XX [LCC-8P-M04] DS501-00044-2v0-E 25 MB85RC64TA ■ MAJOR CHANGES IN THIS EDITION A change on a page is indicated by a vertical line drawn on the left side of that page. Page Section Change Results 26 1 ■ FEATURES Added Data retention under 85 °C. 19 ■ FRAM CHARACTERISTICS Added Data retention under 85 °C. DS501-00044-2v0-E MB85RC64TA MEMO DS501-00044-2v0-E 27 MB85RC64TA FUJITSU SEMICONDUCTOR LIMITED Shin-Yokohama Chuo Building, 2-100-45 Shin-Yokohama, Kohoku-ku, Yokohama, Kanagawa 222-0033, Japan http://jp.fujitsu.com/fsl/en/ All Rights Reserved. FUJITSU SEMICONDUCTOR LIMITED, its subsidiaries and affiliates (collectively, "FUJITSU SEMICONDUCTOR") reserves the right to make changes to the information contained in this document without notice. Please contact your FUJITSU SEMICONDUCTOR sales representatives before order of FUJITSU SEMICONDUCTOR device. Information contained in this document, such as descriptions of function and application circuit examples is presented solely for reference to examples of operations and uses of FUJITSU SEMICONDUCTOR device. FUJITSU SEMICONDUCTOR disclaims any and all warranties of any kind, whether express or implied, related to such information, including, without limitation, quality, accuracy, performance, proper operation of the device or non-infringement. If you develop equipment or product incorporating the FUJITSU SEMICONDUCTOR device based on such information, you must assume any responsibility or liability arising out of or in connection with such information or any use thereof. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any damages whatsoever arising out of or in connection with such information or any use thereof. Nothing contained in this document shall be construed as granting or conferring any right under any patents, copyrights, or any other intellectual property rights of FUJITSU SEMICONDUCTOR or any third party by license or otherwise, express or implied. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any infringement of any intellectual property rights or other rights of third parties resulting from or in connection with the information contained herein or use thereof. The products described in this document are designed, developed and manufactured as contemplated for general use including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high levels of safety is secured, could lead directly to death, personal injury, severe physical damage or other loss (including, without limitation, use in nuclear facility, aircraft flight control system, air traffic control system, mass transport control system, medical life support system and military application), or (2) for use requiring extremely high level of reliability (including, without limitation, submersible repeater and artificial satellite). FUJITSU SEMICONDUCTOR shall not be liable for you and/or any third party for any claims or damages arising out of or in connection with above-mentioned uses of the products. Any semiconductor devices fail or malfunction with some probability. You are responsible for providing adequate designs and safeguards against injury, damage or loss from such failures or malfunctions, by incorporating safety design measures into your facility, equipments and products such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions. The products and technical information described in this document are subject to the Foreign Exchange and Foreign Trade Control Law of Japan, and may be subject to export or import laws or regulations in U.S. or other countries. You are responsible for ensuring compliance with such laws and regulations relating to export or re-export of the products and technical information described herein. All company names, brand names and trademarks herein are property of their respective owners. Edited: System Memory Business Division