MB85RS128A

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-0v01-E Memory FRAM 128K (16 K × 8) Bit SPI MB85RS128A ■ DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128A adopts the Serial Peripheral Interface (SPI). The MB85RS128A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS128A does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS128A takes no wait time. ■ FEATURES • • • • • • • • Bit configuration Operating power supply voltage Operating frequency Serial Peripheral Interface Operating temperature range Data retention High endurance Package : : : : : : : : 16,384 words × 8 bits 3.0 V to 3.6 V 25 MHz (Max) SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) −40 °C to +85 °C 10 years (+55 °C) 10 Billion Read/writes 8-pin plastic SOP (FPT-8P-M02) Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2011.6 MB85RS128A ■ PIN ASSIGNMENT (TOP VIEW) CS 1 8 VCC SO 2 7 HOLD WP 3 6 SCK GND 4 5 SI (FPT-8P-M02) ■ PIN FUNCTIONAL DESCRIPTIONS Pin No. Pin Name Functional description Chip Select This is an input pin to make chips select. When CS is “H”, device is in deselect (standby) status as long as device is not write status internally, and SO becomes High-Z. Other inputs from pins are ignored for this time. When CS is “L”, device is in select (active) status. CS has to be “L” before inputting op-code. Write Protect This is a pin to control writing to a status register. When WP is “L”, writing to a status register is not operated. Hold This pin is used to interrupt serial input/output without making chips deselect. When HOLD is “L”, hold operation is activated, SO becomes High-Z, SCK and SI become don’t care. While the hold operation, CS has to be retained “L”. Serial Clock This is a clock input pin to input/output serial data. SI is loaded synchronously to a rising edge, SO is output synchronously to a falling edge. Serial Data Input This is an input pin of serial data. This inputs op-code, address, and writing data. Serial Data Output This is an output pin of serial data. Reading data of FRAM memory cell array and status register data are output. This is High-Z during standby. Supply Voltage Ground 1 CS 3 WP 7 HOLD 6 SCK 5 SI 2 8 4 SO VCC GND 2 DS501-00008-0v01-E MB85RS128A ■ BLOCK DIAGRAM Serial-Parallel Converter Row-Decoder SI FRAM Cell Array 16,384 ✕ 8 CS Address Counter SCK Control Circuit FRAM Status Register HOLD Column Decoder/Sense Amp/ Write Amp WP Data Register SO Parallel-Serial Converter DS501-00008-0v01-E 3 MB85RS128A ■ SPI MODE MB85RS128A corresponds to the SPI mode 0 (CPOL = 0, CPHA = 0) , and SPI mode 3 (CPOL = 1, CPHA = 1) . CS SCK SI 7 MSB 6 5 4 3 2 1 0 LSB SPI Mode 0 CS SCK SI 7 MSB 6 5 4 3 2 1 0 LSB SPI Mode 3 4 DS501-00008-0v01-E MB85RS128A ■ SERIAL PERIPHERAL INTERFACE (SPI) MB85RS128A works as a slave of SPI. More than 2 devices can be connected by using microcontroller equipped with SPI port. By using a microcontroller not equipped with SPI port, SI and SO can be bus connected to use. SCK MOSI MISO SO SI SCK SO SI SCK SPI Microcontroller MB85RS128A CS SS1 SS2 HOLD1 HOLD2 HOLD MB85RS128A CS HOLD MOSI : Master Out Slave In MISO : Master In Slave Out SS : Slave Select System Configuration with SPI Port Microcontroller SO SI SCK MB85RS128A CS HOLD System Configuration without SPI Port DS501-00008-0v01-E 5 MB85RS128A ■ STATUS REGISTER Bit No. Bit Name Function Status Register Write Protect This is a bit composed of nonvolatile memories (FRAM). WPEN is related to WP input to protect writing to a status register (refer to “■ WRITING PROTECT”). Writing with the WRSR command and reading with the RDSR command are possible. Not Used Bits These are bits composed of nonvolatile memories, writing with the WRSR command is possible, and “000” is written before shipment. These bits are not used but they are read with the RDSR command. Block Protect This is a bit composed of nonvolatile memory (FRAM). This defines block size for writing protect with the WRITE command (refer to “■ BLOCK PROTECT”). Writing with the WRSR command and reading with the RDSR command are possible. Write Enable Latch This indicates FRAM memory and status register are writable. The WREN command is for setting, and the WRDI command is for resetting. With the RDSR command, reading is possible but writing is not possible with the WRSR command. WEL is reset after the following operations. The time when power is up. The time when the WRDI command is input. The time when the WRSR command is input. The time when the WRITE command is input. This is a bit fixed to “0”. 7 WPEN 6 to 4 ⎯ 3 2 BP1 BP0 1 WEL 0 0 ■ OP-CODE MB85RS128A accepts 6 kinds of command specified in op-code. Op-code is a code composed of 8 bits shown in the table below. Do not input invalid codes other than those codes. If CS is risen while inputting op-code, the command are not performed. Name Description Op-code WREN WRDI RDSR WRSR READ WRITE Set Write Enable Latch Reset Write Enable Latch Read Status Register Write Status Register Read Memory Code Write Memory Code 0000 0110B 0000 0100B 0000 0101B 0000 0001B 0000 0011B 0000 0010B 6 DS501-00008-0v01-E MB85RS128A ■ COMMAND • WREN The WREN command sets WEL (Write Enable Latch) . WEL has to be set with the WREN command before writing operation (WRSR command and WRITE command) . CS 0 SCK 1 2 3 4 5 6 7 SI Invalid 0 0 0 0 0 1 1 0 Invalid SO High-Z • WRDI The WRDI command resets WEL (Write Enable Latch) . Writing operation (WRITE command and WRSR command) are not performed when WEL is reset. CS 0 SCK 1 2 3 4 5 6 7 SI Invalid 0 0 0 0 0 1 0 0 Invalid SO High-Z DS501-00008-0v01-E 7 MB85RS128A • RDSR The RDSR command reads status register data. After op-code of RDSR is input to SI, 8-cycle clock is input to SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. Continuously reading status register is enabled by keep on sending SCK before rising CS with the RDSR command. CS 0 SCK 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SI 0 0 0 0 0 1 0 1 Invalid Data Out SO High-Z MSB LSB Invalid • WRSR The WRSR command writes data to the nonvolatile memory bit of status register. After performing WRSR op-code to a SI pin, 8 bits writing data is input. WEL (Write Enable Latch) is not able to be written with WRSR command. a SI value correspondent to bit 1 is ignored. Bit 0 of the status register is fixed to “0” and cannot be written. The SI value corresponding to bit 0 is ignored. CS 0 SCK Instruction SI 0 0 0 0 0 0 0 1 7 6 MSB High-Z Data In 5 4 3 2 1 0 LSB 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SO 8 DS501-00008-0v01-E MB85RS128A • READ The READ command reads FRAM memory cell array data. Arbitrary 16 bits address and op-code of READ are input to SI. The most significant address bit is invalid. Then, 8-cycle clock is input to SCK. SO is output synchronously to the falling edge of SCK. While reading, the SI value is invalid. When CS is risen, the READ command is completed, but keep on reading address with automatic increment is enabled by continuously sending clock for 8 cycles each to SCK before CS is risen. When it reaches the most significant address, it rolls over to come back to the starting address, and reading cycle keeps on infinitely. CS 0 SCK SI SO 16-bit Address OP-CODE 0 0 0 0 0 0 1 1 X X 13 12 11 10 54 MSB High-Z 3 2 1 0 LSB MSB 7 6 5 Invalid Data Out 4 3 2 1 LSB 0 Invalid 1 2 3 4 5 6 7 8 9 10 11 12 13 18 19 20 21 22 23 24 25 26 27 28 29 30 31 • WRITE The WRITE command writes data to FRAM memory cell array. WRITE op-code, arbitrary 16 bits of address and 8 bits of writing data are input to SI. The most significant address bit is invalid. When 8 bits of writing data is input, data is written to FRAM memory cell array. Risen CS will terminate the WRITE command, but if you continue sending the writing data for 8 bits each before CS is risen, it is possible to continue writing with automatic address increment. When it reaches the most significant address, it rolls over, comes back to the starting address, and writing cycle can be continued infinitely. CS 0 SCK SI SO 16-bit Address OP-CODE 0 0 0 0 0 0 1 0 X X 13 12 11 10 54 MSB High-Z Data In 3 2 1 0 7 6 5 4 3 2 1 0 LSB LSB MSB 1 2 3 4 5 6 7 8 9 10 11 12 13 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DS501-00008-0v01-E 9 MB85RS128A ■ BLOCK PROTECT Writing protect block is configured by the WRITE command with BP1, BP0 value of the status register. BP1 BP0 Protected Block 0 0 1 1 0 1 0 1 None 3000H to 3FFFH (upper 1/4) 2000H to 3FFFH (upper 1/2) 0000H to 3FFFH (all) ■ WRITING PROTECT Writing operation of the WRITE command and the WRSR command are protected with the value of WEL, WPEN, WP as shown in the table. WEL WPEN WP Protected Blocks Unprotected Blocks Status Register 0 1 1 1 X 0 1 1 X X 0 1 Protected Protected Protected Protected Protected Unprotected Unprotected Unprotected Protected Unprotected Protected Unprotected ■ HOLD OPERATION Hold status is retained without aborting a command if HOLD is “L” while CS is “L”. The timing for starting and ending hold status depends on the SCK to be “H” or “L” when a HOLD pin input is transited as shown in the diagram below. Arbitrary command operation is interrupted in hold status, SCK and SI inputs become don’t care. And, SO becomes High-Z while reading command (RDSR, READ) . If CS is risen with hold status, a command is aborted and device is reset. CS SCK HOLD Hold Condition Hold Condition 10 DS501-00008-0v01-E MB85RS128A ■ ABSOLUTE MAXIMUM RATINGS Parameter Power supply voltage* Input voltage* Output voltage* Operating temperature Storage temperature Symbol VCC VIN VOUT TA Tstg Rating Min − 0.5 − 0.5 − 0.5 − 40 − 40 Max + 4.0 VCC + 0.5 VCC + 0.5 + 85 + 125 Unit V V V °C °C *:These parameters are based on the condition that VSS is 0 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Power supply voltage* Input high voltage* Input low voltage* Operating temperature Symbol VCC VIH VIL TA Value Min 3.0 VCC × 0.8 − 0.5 − 40 Typ 3.3 ⎯ ⎯ ⎯ Max 3.6 VCC + 0.5 + 0.6 + 85 Unit V V V °C *:These parameters are based on the condition that VSS is 0 V. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. DS501-00008-0v01-E 11 MB85RS128A ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics (within recommended operating conditions) Parameter Input leakage current Output leakage current Operating power supply current Standby current Output high voltage Output low voltage Symbol ILI ILO ICC ISB VOH VOL Condition VIN = 0 V to VCC VOUT = 0 V to VCC SCK = 25 MHz All inputs VSS or SCK = SI = CS = VCC IOH = −2 mA IOL = 2 mA Value Min ⎯ ⎯ ⎯ ⎯ VCC × 0.8 ⎯ Typ ⎯ ⎯ 5 3 ⎯ ⎯ Max 10 10 10 50 ⎯ 0.4 Unit μA μA mA μA V V 12 DS501-00008-0v01-E MB85RS128A 2. AC Characteristics (within recommended operating conditions) Parameter SCK clock frequency Clock high time Clock low time Chip select set up time Chip select hold time Output disable time Output data valid time Output hold time Deselect time Data in rise time Data fall time Data set up time Data hold time HOLD set up time HOLD hold time HOLD output floating time HOLD output active time Symbol fCK tCH tCL tCSU tCSH tOD tODV tOH tD tR tF tSU tH tHS tHH tHZ tLZ Value Min 0 20 20 10 10 ⎯ ⎯ 0 60 ⎯ ⎯ 5 5 10 10 ⎯ ⎯ Max 25 ⎯ ⎯ ⎯ ⎯ 20 18 ⎯ ⎯ 50 50 ⎯ ⎯ ⎯ ⎯ 20 20 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns AC Test Condition Power supply voltage Operation temperature Input voltage magnitude Input rising time Input falling time Input judge level Output judge level : 3.0 V to 3.6 V : − 40 °C to + 85 °C : 0.3 V to 2.7 V : 5 ns : 5 ns : VCC/2 : VCC/2 DS501-00008-0v01-E 13 MB85RS128A AC Load Equivalent Circuit 3.3 V 1.2 k Output 30 pF 0.95 k 3. Pin Capacitance Parameter Output capacitance Input capacitance Symbol CO CI Value Min ⎯ ⎯ Max 10 10 Unit pF pF 14 DS501-00008-0v01-E MB85RS128A ■ TIMING DIAGRAM • Serial Data Timing tD CS tCSH tCH SCK tSU tH tCL tCSU SI Valid in tODV High-Z tOH tOD High-Z SO : don't care • Hold Timing CS SCK tHS tHS tHH tHS tHH tHS tHH tHH HOLD SO High-Z High-Z tHZ tLZ tHZ tLZ DS501-00008-0v01-E 15 MB85RS128A ■ POWER ON/OFF SEQUENCE tpd VCC tr tpu VCC 3.0 V VIH (Min) 3.0 V VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) GND GND CS CS >VCC × 0.8* CS : don't care CS >VCC × 0.8* CS * : CS (Max) < VCC + 0.5 V Note : • Because turning the power-on from an intermediate level may cause malfunctions, when the power is turned on, VCC is required to be started from 0 V. • If the device does not operate within the specified conditions of read cycle, write cycle, power on/ off sequence, memory data can not be guaranteed. Parameter CS level hold time at power OFF CS level hold time at power ON Power supply rising time Symbol tpd tpu tr Value Min 200 85 0.05 Max ⎯ ⎯ 200 Unit ns ns ms ■ NOTES ON USE After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow. 16 DS501-00008-0v01-E MB85RS128A ■ ORDERING INFORMATION Part number TBD TBD Package 8-pin plastic SOP (FPT-8P-M02) 8-pin plastic SOP (FPT-8P-M02) Embossed Carrier tape Remarks Note : Please confirm the ordering information with the sales representatives. DS501-00008-0v01-E 17 MB85RS128A ■ PACKAGE DIMENSION 8-pin plastic SOP Lead pitch Package width × package length Lead shape Sealing method Mounting height Weight 1.27 mm 3.9 mm × 5.05 mm Gullwing Plastic mold 1.75 mm MAX 0.06 g (FPT-8P-M02) 8-pin plastic SOP (FPT-8P-M02) Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. +.010 *1 5.05 –0.20 .199 –.008 8 +0.25 0.22 –0.07 5 +0.03 +.001 .009 –.003 *2 3.90±0.30 6.00±0.40 (.154±.012) (.236±.016) Details of "A" part 45° 1.55±0.20 (Mounting height) (.061±.008) 0.25(.010) 0.40(.016) 1 4 "A" 0~8° 1.27(.050) 0.44±0.08 (.017±.003) 0.13(.005) M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.15±0.10 (.006±.004) (Stand off) 0.10(.004) C 2002-2010 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-4-9 Dimensions in mm (inches). Note: The values in parentheses are reference values. Please check the latest package dimension at the following URL. http://edevice.fujitsu.com/package/en-search/ 18 DS501-00008-0v01-E MB85RS128A MEMO DS501-00008-0v01-E 19 MB85RS128A FUJITSU SEMICONDUCTOR LIMITED Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America FUJITSU SEMICONDUCTOR AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. 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