FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00021-2v0-E
Memory FRAM
256 K (32 K × 8) Bit SPI
MB85RS256B
■ DESCRIPTION
MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS256B adopts the Serial Peripheral Interface (SPI).
The MB85RS256B is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256B can be used for 1012 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS256B does not take long time to write data like Flash memories or E2PROM, and MB85RS256B
takes no wait time.
■ FEATURES
: 32,768 words × 8 bits
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Operating frequency
: All commands except READ 33 MHz (Max)
READ command
25 MHz (Max)
High endurance
: 1012 times / byte
Data retention
: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
Operating power supply voltage : 2.7 V to 3.6 V
Low power consumption
: Operating power supply current 6 mA (Typ@33 MHz)
Standby current 9 μA (Typ)
Operation ambient temperature range : -40 °C to +85 °C
Package
: 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
• Bit configuration
• Serial Peripheral Interface
•
•
•
•
•
•
•
Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.2
MB85RS256B
■ PIN ASSIGNMENT
(TOP VIEW)
CS
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
GND
4
5
SI
(FPT-8P-M02)
■ PIN FUNCTIONAL DESCRIPTIONS
Pin No. Pin Name
CS
Chip Select pin
This is an input pin to make chips select. When CS is “H” level, device is in deselect
(standby) status and SO becomes High-Z. Inputs from other pins are ignored for this
time. When CS is “L” level, device is in select (active) status. CS has to be “L” level before
inputting op-code.
WP
Write Protect pin
This is a pin to control writing to a status register. The writing of status register (see “■
STATUS REGISTER”) is protected in related with WP and WPEN. See “■ WRITING
PROTECT” for detail.
7
HOLD
Hold pin
This pin is used to interrupt serial input/output without making chips deselect. When
HOLD is “L” level, hold operation is activated, SO becomes High-Z, SCK and SI become
do not care. While the hold operation, CS has to be retained “L” level.
6
SCK
Serial Clock pin
This is a clock input pin to input/output serial data. SI is loaded synchronously to a rising
edge, SO is output synchronously to a falling edge.
5
SI
Serial Data Input pin
This is an input pin of serial data. This inputs op-code, address, and writing data.
2
SO
Serial Data Output pin
This is an output pin of serial data. Reading data of FRAM memory cell array and status
register data are output. This is High-Z during standby.
8
VDD
Supply Voltage pin
4
GND
Ground pin
1
3
2
Functional description
DS501-00021-2v0-E
MB85RS256B
■ BLOCK DIAGRAM
Control Circuit
SCK
HOLD
Row Decoder
CS
Address Counter
Serial-Parallel Converter
SI
FRAM Cell Array
32,768 ✕ 8
FRAM
Status Register
Column Decoder/Sense Amp/
Write Amp
WP
Data Register
SO
Parallel-Serial Converter
DS501-00021-2v0-E
3
MB85RS256B
■ SPI MODE
MB85RS256B corresponds to the SPI mode 0 (CPOL = 0, CPHA = 0) , and SPI mode 3 (CPOL = 1, CPHA = 1) .
CS
SCK
SI
7
6
5
MSB
4
3
2
1
0
LSB
SPI Mode 0
CS
SCK
SI
7
6
5
4
MSB
3
2
1
0
LSB
SPI Mode 3
4
DS501-00021-2v0-E
MB85RS256B
■ SERIAL PERIPHERAL INTERFACE (SPI)
MB85RS256B works as a slave of SPI. More than 2 devices can be connected by using microcontroller
equipped with SPI port. By using a microcontroller not equipped with SPI port, SI and SO can be bus
connected to use.
SCK
MOSI
MISO
SO
SPI
Microcontroller
SI
SO
SCK
SCK
MB85RS256B
MB85RS256B
CS
SI
CS
HOLD
HOLD
SS1
SS2
HOLD1
HOLD2
MOSI : Master Out Slave In
MISO : Master In Slave Out
SS
: Slave Select
System Configuration with SPI Port
SO
SI
SCK
Microcontroller
MB85RS256B
CS
HOLD
System Configuration without SPI Port
DS501-00021-2v0-E
5
MB85RS256B
■ STATUS REGISTER
Bit No.
Bit Name
Function
WPEN
Status Register Write Protect
This is a bit composed of nonvolatile memories (FRAM). WPEN protects
writing to a status register (refer to “■ WRITING PROTECT”) relating with
WP input. Writing with the WRSR command and reading with the RDSR
command are possible.
6 to 4
⎯
Not Used Bits
These are bits composed of nonvolatile memories, writing with the WRSR
command is possible, and “000” is written before shipment. These bits are
not used but they are read with the RDSR command.
3
BP1
2
BP0
7
1
WEL
0
0
Block Protect
This is a bit composed of nonvolatile memory. This defines size of write
protect block for the WRITE command (refer to “■ BLOCK PROTECT”).
Writing with the WRSR command and reading with the RDSR command
are possible.
Write Enable Latch
This indicates FRAM Array and status register are writable. The WREN
command is for setting, and the WRDI command is for resetting. With the
RDSR command, reading is possible but writing is not possible with the
WRSR command. WEL is reset after the following operations.
After power ON.
After WRDI command recognition.
The rising edge of CS after WRSR command recognition.
The rising edge of CS after WRITE command recognition.
This is a bit fixed to “0”.
■ OP-CODE
MB85RS256B accepts 8 kinds of command specified in op-code. Op-code is a code composed of 8 bits
shown in the table below. Do not input invalid codes other than those codes. If CS is risen while inputting
op-code, the command are not performed.
Name
Description
Op-code
WREN
Set Write Enable Latch
0000 0110B
WRDI
Reset Write Enable Latch
0000 0100B
RDSR
Read Status Register
0000 0101B
WRSR
Write Status Register
0000 0001B
READ
Read Memory Code
0000 0011B
WRITE
Write Memory Code
0000 0010B
Read Device ID
1001 1111B
Fast Read Memory Code
0000 1011B
RDID
FSTRD
6
DS501-00021-2v0-E
MB85RS256B
■ COMMAND
• WREN
The WREN command sets WEL (Write Enable Latch) . WEL has to be set with the WREN command before
writing operation (WRSR command and WRITE command) . WREN command is applicable to “Up to
33 MHz operation”.
CS
0
1
2
3
4
5
6
7
SCK
SI
Invalid
0
0
0
0
0
1
1
Invalid
0
High-Z
SO
• WRDI
The WRDI command resets WEL (Write Enable Latch) . Writing operation (WRSR command and WRITE
command) are not performed when WEL is reset. WRDI command is applicable to “Up to 33 MHz operation”.
CS
0
1
2
3
4
5
6
7
SCK
SI
Invalid
SO
DS501-00021-2v0-E
0
0
0
0
0
1
0
0
Invalid
High-Z
7
MB85RS256B
• RDSR
The RDSR command reads status register data. After op-code of RDSR is input to SI, 8-cycle clock is input
to SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. In the
RDSR command, repeated reading of status register is enabled by sending SCK continuously before rising
of CS. RDSR command is applicable to “Up to 33 MHz operation”.
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
0
Invalid
1
Data Out
High-Z
SO
Invalid
MSB
LSB
• WRSR
The WRSR command writes data to the nonvolatile memory bit of status register. After performing WRSR
op-code to a SI pin, 8 bits writing data is input. WEL (Write Enable Latch) is not able to be written with WRSR
command. A SI value correspondent to bit 1 is ignored. Bit 0 of the status register is fixed to “0” and cannot
be written. The SI value corresponding to bit 0 is ignored. WP signal level shall be fixed before performing
WRSR command, and do not change the WP signal level until the end of command sequence. WRSR
command is applicable to “Up to 33 MHz operation”.
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Data In
Instruction
SI
SO
8
0
0
0
0
0
0
0
1
7
MSB
High-Z
6
5
4
3
2
1
0
LSB
DS501-00021-2v0-E
MB85RS256B
• READ
The READ command reads FRAM memory cell array data. Arbitrary 16 bits address and op-code of READ
are input to SI. The most significant address bit is invalid. Then, 8-cycle clock is input to SCK. SO is output
synchronously to the falling edge of SCK. While reading, the SI value is invalid. When CS is risen, the READ
command is completed, but keeps on reading with automatic address increment which is enabled by continuously sending clocks to SCK in unit of 8 cycles before CS rising. When it reaches the most significant
address, it rolls over to the starting address, and reading cycle keeps on infinitely. READ command is
applicable to “Up to 25 MHz operation”.
CS
0
1
2
3
4
5
6
7
8
9 10 11 12 13
18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCK
SI
SO
16-bit Address
OP-CODE
5 4
0 0 0 0 0 0 1 1 X 14 13 12 11 10
MSB
High-Z
3
2
1
Invalid
0
LSB MSB
7
6
Data Out
5
4
3
2
1
LSB
0
Invalid
• WRITE
The WRITE command writes data to FRAM memory cell array. WRITE op-code, arbitrary 16 bits of address
and 8 bits of writing data are input to SI. The most significant address bit is invalid. When 8 bits of writing
data is input, data is written to FRAM memory cell array. Risen CS will terminate the WRITE command, but
if you continue sending the writing data for 8 bits each before CS rising, it is possible to continue writing with
automatic address increment. When it reaches the most significant address, it rolls over to the starting
address, and writing cycle can be continued infinitely. WRITE command is applicable to “Up to 33MHz
operation”.
CS
0
1
2
3
4
5
6
7
8
9 10 11 12 13
18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCK
SI
SO
16-bit Address
OP-CODE
0 0 0 0 0 0 1 0 X 14 13 12 11 10
5 4
MSB
High-Z
DS501-00021-2v0-E
Data In
3
2
1
0
7
6
LSB MSB
5
4
3
2
1
0
LSB
9
MB85RS256B
• FSTRD
The FSTRD command reads FRAM memory cell array data. Arbitrary 16 bits address and op-code of FSTRD
are input to SI followed by 8 bits dummy. The most significant address bit is invalid. Then, 8-cycle clock is
input to SCK. SO is output synchronously to the falling edge of SCK. While reading, the SI value is invalid.
When CS is risen, the FSTRD command is completed, but keeps on reading with automatic address increment which is enabled by continuously sending clocks to SCK in unit of 8 cycles before CS rising. When it
reaches the most significant address, it rolls over to the starting address, and reading cycle keeps on infinitely.
FSTRD command is applicable to “Up to 33 MHz operation”.
CS
0
1
2
3 4
5
6
7
8
OP-CODE
0 0 0 0 1 0
1
1 X 14 13 12
MSB
21 22 23 24 25
9 10 11
30 31 32 33 34 35 36 37 38 39
SCK
SI
16-bit Address
2
High-Z
8-bit Dummy
Invalid
X X
1 0 X X
LSB
MSB
7 6
SO
5
Data Out
4 3 2 1
LSB
0
Invalid
• RDID
The RDID command reads fixed Device ID. After performing RDID op-code to SI, 32-cycle clock is input to
SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. The output
is in order of Manufacturer ID (8bit)/Continuation code (8bit)/Product ID (1st Byte)/Product ID (2nd Byte).
RDID command is applicable to “Up to 33 MHz operation”.
In the RDID command, SO holds the output state of the last bit after 32-bit Device ID output by continuously
sending SCK clock before CS is risen. RDID command is applicable to “Up to 33 MHz operation”.
CS
0
1
2
3
4
5
6
7
1
0
0
1
1
1
1
1
8
31 32 33 34 35 36 37 38 39
9 10 11
SCK
SI
Invalid
Data Out
SO
High-Z
Data Out
8
31 30 29 28
7
6
5
4
3
2
MSB
1
0
LSB
bit
Manufacturer ID
Continuation code
7
0
0
6
0
1
5
0
1
4
0
1
3
0
1
Proprietary use
10
Product ID (1st Byte)
0
0
0
Product ID (2nd Byte)
0
0
0
2
1
1
1
0
1
0
0
1
Density
0
0
Hex
04H Fujitsu
7FH
Hex
1
0
1
05H
Proprietary use
0
1
0
0
1
Hex
09H
Density: 00101B =
256kbit
DS501-00021-2v0-E
MB85RS256B
■ BLOCK PROTECT
Writing protect block for WRITE command is configured by the value of BP0 and BP1 in the status register.
BP1
BP0
Protected Block
0
0
None
0
1
6000H to 7FFFH (upper 1/4)
1
0
4000H to 7FFFH (upper 1/2)
1
1
0000H to 7FFFH (all)
■ WRITING PROTECT
Writing operation of the WRITE command and the WRSR command are protected with the value of WEL,
WPEN, WP as shown in the table.
WEL
WPEN
WP
Protected Blocks
Unprotected Blocks
Status Register
0
X
X
Protected
Protected
Protected
1
0
X
Protected
Unprotected
Unprotected
1
1
0
Protected
Unprotected
Protected
1
1
1
Protected
Unprotected
Unprotected
■ HOLD OPERATION
Hold status is retained without aborting a command if HOLD is “L” level while CS is “L” level. The timing for
starting and ending hold status depends on the SCK to be “H” level or “L” level when a HOLD pin input is
transited to the hold condition as shown in the diagram below. In case the HOLD pin transited to “L” level
when SCK is “L” level, return the HOLD pin to “H” level at SCK being “L” level. In the same manner, in case
the HOLD pin transited to “L” level when SCK is “H” level, return the HOLD pin to “H” level at SCK being “H”
level. Arbitrary command operation is interrupted in hold status, SCK and SI inputs become do not care.
And, SO becomes High-Z while reading command (RDSR, READ). If CS is rising during hold status, a
command is aborted. In case the command is aborted before its recognition, WEL holds the value before
transition to HOLD status.
CS
SCK
HOLD
Hold Condition
DS501-00021-2v0-E
Hold Condition
11
MB85RS256B
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Min
Max
Unit
Power supply voltage*
VDD
− 0.5
+ 4.0
V
Input voltage*
VIN
− 0.5
VDD + 0.5
V
VOUT
− 0.5
VDD + 0.5
V
TA
− 40
+ 85
°C
Tstg
− 55
+ 125
°C
Output voltage*
Operation ambient temperature
Storage temperature
*:These parameters are based on the condition that VSS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Typ
Max
Unit
Power supply voltage*
VDD
2.7
3.3
3.6
V
Input high voltage*
VIH
VDD × 0.8
⎯
VDD + 0.5
V
Input low voltage*
VIL
− 0.5
⎯
+ 0.6
V
Operation ambient temperature
TA
− 40
⎯
+ 85
°C
*:These parameters are based on the condition that VSS is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
12
DS501-00021-2v0-E
MB85RS256B
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Input leakage current*1
Output leakage current*
2
Symbol
Condition
|ILI|
|ILO|
Value
Unit
Min
Typ
Max
VIN = 0 V to VDD
⎯
⎯
10
μA
VOUT = 0 V to VDD
⎯
⎯
10
μA
SCK = 25 MHz
⎯
4
5
mA
SCK = 33 MHz
⎯
5
6
mA
Operating power supply current
IDD
Standby current
ISB
All inputs VSS or
SCK = SI = CS = VDD
⎯
9
50
μA
Output high voltage
VOH
IOH = −2 mA
VDD × 0.8
⎯
⎯
V
Output low voltage
VOL
IOL = 2 mA
⎯
⎯
0.4
V
*1 : Applicable pin : CS, WP, HOLD, SCK, SI
*2 : Applicable pin : SO
DS501-00021-2v0-E
13
MB85RS256B
2. AC Characteristics
Value
Parameter
Symbol
Up to 25MHz operation
Up to 33MHz operation*
Min
Max
Min
Max
Unit
SCK clock frequency
fCK
0
25
0
33
MHz
Clock high time
tCH
20
⎯
15
⎯
ns
Clock low time
tCL
20
⎯
15
⎯
ns
Chip select set up time
tCSU
10
⎯
10
⎯
ns
Chip select hold time
tCSH
10
⎯
10
⎯
ns
Output disable time
tOD
⎯
20
⎯
20
ns
Output data valid time
tODV
⎯
18
⎯
13
ns
Output hold time
tOH
0
⎯
0
⎯
ns
Deselect time
tD
60
⎯
40
⎯
ns
Data in rising time
tR
⎯
50
⎯
50
ns
Data falling time
tF
⎯
50
⎯
50
ns
Data set up time
tSU
5
⎯
5
⎯
ns
Data hold time
tH
5
⎯
5
⎯
ns
HOLD set up time
tHS
10
⎯
10
⎯
ns
HOLD hold time
tHH
10
⎯
10
⎯
ns
HOLD output floating time
tHZ
⎯
20
⎯
20
ns
HOLD output active time
tLZ
⎯
20
⎯
20
ns
* : All commands except READ are applicable to “Up to 33 MHz operation”.
READ command is applicable to “Up to 25MHz operation”.
AC Test Condition
Power supply voltage
Operation ambient temperature
Input voltage magnitude
Input rising time
Input falling time
Input judge level
Output judge level
14
: 2.7 V to 3.6 V
: − 40 °C to + 85 °C
: 0.3 V to 2.7 V
: 5 ns
: 5 ns
: VDD/2
: VDD/2
DS501-00021-2v0-E
MB85RS256B
AC Load Equivalent Circuit
3.3 V
1.2 k
Output
30 pF
0.95 k
3. Pin Capacitance
Parameter
Symbol
Condition
Output capacitance
CO
Input capacitance
CI
VDD = VIN = VOUT = 0 V,
f = 1 MHz, TA = +25 °C
DS501-00021-2v0-E
Value
Unit
Min
Max
⎯
10
pF
⎯
10
pF
15
MB85RS256B
■ TIMING DIAGRAM
• Serial Data Timing
tD
CS
tCSH
tCSU
tCH
tCL
tCH
SCK
tSU
tH
Valid in
SI
tODV
SO
tOH
tOD
High-Z
High-Z
: H or L
• Hold Timing
CS
SCK
tHS
tHH
tHS
tHS
tHH
tHS
tHH
tHH
HOLD
High-Z
SO
tHZ
16
tLZ
High-Z
tHZ
tLZ
DS501-00021-2v0-E
MB85RS256B
■ POWER ON/OFF SEQUENCE
If VDD falls down below 2.0 V, VDD is required to be started from 1.0 V or less to prevent malfunctions when
the power is turned on again (see the figure below).
tr
tpd
tpu
VDD
VDD
3.0 V
3.0 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
GND
GND
CS >VDD × 0.8*
CS
CS >VDD × 0.8*
CS : do not care
CS
* : CS (Max) < VDD + 0.5 V
Parameter
Symbol
Value
Min
Max
Unit
CS level hold time at power OFF
tpd
200
⎯
ns
CS level hold time at power ON
tpu
85
⎯
ns
tr
0.05
200
ms
Power supply rising time
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Item
Min
1
Read/Write Endurance*
2
Data Retention*
12
10
Max
Unit
Parameter
⎯
Times/byte
Operation Ambient Temperature TA = + 85 °C
10
⎯
95
⎯
≥ 200
⎯
Operation Ambient Temperature TA = + 85 °C
Years
Operation Ambient Temperature TA = + 55 °C
Operation Ambient Temperature TA = + 35 °C
*1 : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory operates
with destructive readout mechanism.
*2 : Minimun values define retention time of the first reading/writing data right after shipment, and these values
are calculated by qualification results.
■ NOTE ON USE
Data written before performing IR reflow is not guaranteed after IR reflow.
DS501-00021-2v0-E
17
MB85RS256B
■ ESD AND LATCH-UP
Test
DUT
Value
ESD HBM (Human Body Model)
JESD22-A114 compliant
≥ |2000 V|
ESD MM (Machine Model)
JESD22-A115 compliant
≥ |200 V|
ESD CDM (Charged Device Model)
JESD22-C101 compliant
⎯
Latch-Up (I-test)
JESD78 compliant
MB85RS256BPNF-G-JNE1
⎯
Latch-Up (Vsupply overvoltage test)
JESD78 compliant
⎯
Latch-Up (Current Method)
Proprietary method
⎯
Latch-Up (C-V Method)
Proprietary method
⎯
• Current method of Latch-Up Resistance Test
Protection Resistance
A
Test terminal
IIN
VIN
VDD
+
DUT
-
VSS
VDD
(Max.Rating)
V
Reference
terminal
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under IIN = ± 300 mA.
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
18
DS501-00021-2v0-E
MB85RS256B
• C-V method of Latch-Up Resistance Test
Protection Resistance
A
1
Test
2 terminal
SW
+
VIN
V
-
C
200pF
VDD
DUT
VDD
(Max.Rating)
VSS
Reference
terminal
Note : Charge voltage alternately switching 1 and 2 approximately 2 sec interval. This switching process is
considered as one cycle. Repeat this process 5 times. However, if the latch-up condition occurs before
completing 5times, this test must be stopped immediately.
DS501-00021-2v0-E
19
MB85RS256B
■ REFLOW CONDITIONS AND FLOOR LIFE
Item
Condition
Method
IR (infrared reflow) , Convection
Times
2
Before unpacking
Please use within 2 years after production.
From unpacking to 2nd reflow
Within 8 days
In case over period of floor life
Baking with 125 °C+/-3 °C for
24hrs+2hrs/-0hrs is required.
Then please use within 8 days.
(Please remember baking is up to 2 times)
Floor life
Floor life condition
Between 5 °C and 30 °C and also below 70%RH required.
(It is preferred lower humidity in the required temp range.)
Reflow Profile
260°C
255°C
Liquidous
Temperature
170 °C
to
190 °C
(b)
RT
(c)
(a)
(a) Average ramp-up rate
(b) Preheat & Soak
(c) Average ramp-up rate
(d) Peak temperature
(d’) Liquidous temperature
(e) Cooling
(d)
(e)
(d')
: 1 °C/s to 4 °C/s
: 170 °C to 190 °C, 60 s to 180 s
: 1 °C/s to 4 °C/s
: Temperature 260 °C Max; 255 °C within 10 s
: Up to 230 °C within 40 s or
Up to 225 °C within 60 s or
Up to 220 °C within 80 s
: Natural cooling or forced cooling
Note : Temperature on the top of the package body is measured.
20
DS501-00021-2v0-E
MB85RS256B
■ RESTRICTED SUBSTANCES
This product complies with the regulations below (Based on current knowledge as of November 2011).
• EU RoHS Directive (2002/95/EC)
• China RoHS (Administration on the Control of Pollution Caused by Electronic Information Products
(
))
• Vietnam RoHS (30/2011/TT-BCT)
Restricted substances in each regulation are as follows.
Substances
Threshold
Contain status*
Lead and its compounds
1,000 ppm
❍
Mercury and its compounds
1,000 ppm
❍
100 ppm
❍
Hexavalent chromium compound
1,000 ppm
❍
Polybrominated biphenyls (PBB)
1,000 ppm
❍
Polybrominated diphenyl ethers (PBDE)
1,000 ppm
❍
Cadmium and its compounds
* : The mark of “❍” shows below a threshold value.
DS501-00021-2v0-E
21
MB85RS256B
■ ORDERING INFORMATION
Package
Shipping form
Minimum shipping
quantity
MB85RS256BPNF-G-JNE1
8-pin plastic SOP
(FPT-8P-M02)
Tube
1
MB85RS256BPNF-G-JNERE1
8-pin plastic SOP
(FPT-8P-M02)
Embossed Carrier tape
1500
Part number
22
DS501-00021-2v0-E
MB85RS256B
■ PACKAGE DIMENSION
8-pin plastic SOP
Lead pitch
1.27 mm
Package width ×
package length
3.9 mm × 5.05 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
1.75 mm MAX
Weight
0.06 g
(FPT-8P-M02)
8-pin plastic SOP
(FPT-8P-M02)
+0.25
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+.010
+0.03
*1 5.05 –0.20 .199 –.008
0.22 –0.07
+.001
.009 –.003
8
5
*2 3.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005)
0~8°
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
DS501-00021-2v0-E
23
MB85RS256B
■ MARKING
[MB85RS256BPNF-G-JNE1]
[MB85RS256BPNF-G-JNERE1]
RS256B
E11150
300
[FPT-8P-M02]
24
DS501-00021-2v0-E
MB85RS256B
■ PACKING INFORMATION
1. Tube
1.1 Tube Dimensions
• Tube/stopper shape
Tube
Transparent polyethylene terephthalate
(treated to antistatic)
Stopper
(treated to antistatic)
Tube length: 520 mm
Tube cross-sections and Maximum quantity
Maximum quantity
Package form
Package code
FPT-8P-M02
SOP, 8, plastic (2)
pcs/
tube
pcs/inner
box
pcs/outer
box
95
7600
30400
1.8
2.6
7.4
6.4
4.4
©2006-2010 FUJITSU SEMICONDUCTOR LIMITED
C 2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1
F08008-SET1-PET:FJ99L-0022-E0008-1-K-3
t = 0.5
Transparent polyethylene terephthalate
(Dimensions
in mm)
DS501-00021-2v0-E
25
MB85RS256B
1.2 Tube Dry pack packing specifications
IC
Tube
Stopper
For SOP
Index mark
Label I *1*3
Aluminum Iaminated bag
Heat seal
Dry pack
Desiccant
Humidity indicater
Aluminum Iaminated bag
(tubes inside)
Inner box
Cushioning material
Inner box
Label I
*1*3
Cushioning material
Outer box*2
Outer box
Use adhesive tapes.
Label II-A *3
Label II-B *3
*1: For a product of witch part number is suffixed with “E1”, a “ G
bag and the inner boxes.
Pb
” marks is display to the moisture barrier
*2: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*3: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributer.
26
DS501-00021-2v0-E
MB85RS256B
1.3 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
DS501-00021-2v0-E
27
MB85RS256B
1.4 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
L
W
H
540
125
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
565
270
180
(Dimensions in mm)
28
DS501-00021-2v0-E
MB85RS256B
2. Emboss Tape
2.1 Tape Dimensions
PKG code
FPT-8P-M02
Maximum storage capacity
Reel No
3
pcs/reel
pcs/inner box
pcs/outer box
1500
1500
10500
ø1.5 +0.1
–0
8±0.1
1.75±0.1
2±0.05
4±0.1
B
0.3±0.05
A
B
A
5.5±0.1
12 +0.3
–0.1
5.5±0.05
ø1.5 +0.1
–0
SEC.B-B
2.1±0.1
6.4±0.1
0.4
3.9±0.2
SEC.A-A
C
2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1
(Dimensions in mm)
Material : Conductive polystyrene
Heat proof temperature : No heat resistance.
Package should not be baked
by using tape and reel.
DS501-00021-2v0-E
29
MB85RS256B
2.2 IC orientation
• ER type
Index mark
(User Direction of Feed)
(User Direction of Feed)
(Reel side)
2.3 Reel dimensions
Reel cutout dimensions
E
∗
D
C
B
A
W1
W2
r
W3
∗:
Reel No
Hub unit width dimensions
1
2
3
4
5
6
7
8
Tape width
8
12
16
24
Symbol
A
254 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2 254 ± 2 330 ± 2
C
13 ± 0.2
D
21 ± 0.8
E
10
11
44
12
13
56
12
Dimensions in mm
14
15
16
24
330 ± 2
150 +2
-0
100 +2
-0
150 +2
-0
100 +2
-0
100 ± 2
13 +0.5
-0.2
20.5 +1
-0.2
2 ± 0.5
W1
8.4 +2
-0
W2
less than
14.4
less than 18.4
less than 22.4
less than 30.4
less than 38.4
less than 50.4
less than
62.4
less than
18.4
less than
22.4
less than
30.4
W3
7.9 ~ 10.9
11.9 ~ 15.4
15.9 ~ 19.4
23.9 ~ 27.4
31.9 ~ 35.4
43.9 ~ 47.4
55.9 ~
59.4
12.4 ~
14.4
16.4 ~
18.4
24.4 ~
26.4
r
30
32
100 +2
-0
100 +2
-0
B
9
12.4 +2
-0
16.4 +2
-0
24.4 +2
-0
32.4 +2
-0
44.4 +2
-0
+0.1
56.4 +2
12.4 +1
16.4 +1
-0
-0
-0 24.4 -0
1.0
DS501-00021-2v0-E
MB85RS256B
2.4 Taping (φ330mm Reel) Dry Pack Packing Specifications
Outside diameter: φ 330mm reel
Label I *1, *4
Embossed
tapes
Label I *1, *4
Desiccant
Humidity indicator
Aluminum laminated bag
Dry pack
Label I *1, *4
Heat seal
Inner box
Inner box
Label I *1, *4
Taping
Outer box *2, *3
Outer box
Use adhesive tapes.
Label II-A *4
Label II-B *4
*1: For a product of witch part number is suffixed with “E1”, a “ G
bag and the inner boxes.
Pb
” marks is display to the moisture barrier
*2: The size of the outer box may be changed depending on the quantity of inner boxes.
*3: The space in the outer box will be filled with empty inner boxes, or cushions, etc.
*4: Please refer to an attached sheet about the indication label.
Note: The packing specifications may not be applied when the product is delivered via a distributer.
DS501-00021-2v0-E
31
MB85RS256B
2.5 Product label indicators
Label I: Label on Inner box/Moisture Barrier Bag/ (It sticks it on the reel for the emboss taping)
[C-3 Label (50mm × 100mm) Supplemental Label (20mm × 100mm)]
XXXXXXXXXXXXXX
(Customer part number or FJ part number)
C-3 Label
(LEAD FREE mark)
(3N)1 XXXXXXXXXXXXXX XXX
(Part number and quantity)
QC PASS
(3N)2 XXXXXXXXXX XXXXXX
(FJ control number)
XXX pcs
XXXXXXXXXXXXXX
(Quantity)
(Customer part number or FJ part number)
(Customer part number or FJ part number
bar code)
XXXX/XX/XX (Packed years/month/day) ASSEMBLED IN xxxx
XXXXXXXXXXXXXX (Customer part number or FJ part number)
(FJ control number bar code)
XX/XX
XXXX-XXX XXX
(Package count)
XXXX-XXX XXX
XXXXXXXXXX (FJ control number ) (Lot Number and quantity)
XXXXXXXXXXXXXX (Comment)
Perforated line
Supplemental Label
Label II-A: Label on Outer box [D Label] (100mm × 100mm)
D Label
XXXXXXXXXXXXX (Customer Name)
(CUST.)
XXXXXXXXX (Delivery Address)
(DELIVERY POINT)
XXXXXXXXXXXXXX
(TRANS.NO.) (FJ control number)
XXXXXXXXXXXXXX
(PART NO.)
(Customer part number or
FJ part number)
XXX (FJ control number)
XXX (FJ control number)
XXX (FJ control number)
XXXXXXXXXXXXXX
(Part number)
(PART NAME) XXXXXXXXXXXXXX (Part number)
XXX/XXX
(Q’TY/TOTAL Q’TY)
(CUSTOMER'S
REMARKS)
XXXXXXXXXXXXXXXXXXXX
(3N)3 XXXXXXXXXXXXXX XXX
XX
(UNIT)
(PACKAGE COUNT)
XXX/XXX
(3N)4 XXXXXXXXXXXXXX XXX
(FJ control number + Product quantity)
(FJ control number + Product quantity
bar code)
(Part number + Product quantity)
(3N)5 XXXXXXXXXX
(FJ control number)
(Part number + Product quantity bar code)
(FJ control number bar code)
Label II-B: Outer boxes product indicate
XXXXXXXXXXXXXX
(Lot Number)
XXXX-XXX
XXXX-XXX
(Part number)
(Count)
X
X
(Quantity)
XXX
XXX
XXX
Note: Depending on shipment state, “Label II-A” and “Label II-B” on the external boxes might not be printed.
32
DS501-00021-2v0-E
MB85RS256B
2.6 Dimensions for Containers
(1) Dimensions for inner box
H
W
L
Tape width
L
W
H
12, 16
24, 32
44
40
365
50
345
65
56
75
(Dimensions in mm)
(2) Dimensions for outer box
H
W
L
L
W
H
415
400
315
(Dimensions in mm)
DS501-00021-2v0-E
33
MB85RS256B
■ MAJOR CHANGES IN THIS EDITION
A change on a page is indicated by a vertical line drawn on the left side of that page.
Page
Section
Change Results
■ FEATURES
Revised the Data retention
10 years ( + 85 °C)
→10 years ( + 85 °C), 95 years ( + 55 °C),
over 200 years ( + 35 °C)
■ COMMAND
• RDID
Deleted the following description:
“RDID command is applicable to “Up to 33 MHz operation”.”
1
10
17
■ POWER ON/OFF SEQUENCE Revised the following description:
“VDD pin is required to be rising from 0 V because turning the
power on from an intermediate level may cause
malfunctions, when the power is turned on.”
→ “If VDD falls down below 2.0 V, VDDin is required to be started
from 1.0 V or less to prevent malfunctions when the power is
turned on again (see the figure below).”
Moved the following description under the table:
“If the device does not operate within the specified conditions of
read cycle, write cycle or power on/off sequence, memory data
can not be guaranteed.”
18
21
34
■ FRAM CHARACTERISTICS
Revised the table and Note
■ ESD AND LATCH-UP
Revised the following description:
“occurred” → “occur”
■ RESTRICTED SUBSTANCES
Revised the following description:
“the below regulations” → “the regulations below”
“as belows” → “as follows”
DS501-00021-2v0-E
MB85RS256B
MEMO
DS501-00021-2v0-E
35
MB85RS256B
FUJITSU SEMICONDUCTOR LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-0033, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fsl/en/
For further information please contact:
North and South America
FUJITSU SEMICONDUCTOR AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://us.fujitsu.com/micro/
Asia Pacific
FUJITSU SEMICONDUCTOR ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://sg.fujitsu.com/semiconductor/
Europe
FUJITSU SEMICONDUCTOR EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.
30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District,
Shanghai 201204, China
Tel : +86-21-6146-3688 Fax : +86-21-6146-3660
http://cn.fujitsu.com/fss/
Korea
FUJITSU SEMICONDUCTOR KOREA LTD.
902 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fsk/
FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.
2/F, Green 18 Building, Hong Kong Science Park,
Shatin, N.T., Hong Kong
Tel : +852-2736-3232 Fax : +852-2314-4207
http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does
not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any
third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right
by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or
other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in
weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations
of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
工商网监
湘ICP备2023018690号
