MBF110PFWSTG

MBF110 Solid-State Fingerprint Sensor Overview The Fujitsu MBF110 Solid-State Fingerprint Sensor is a direct contact, fingerprint acquisition device. It is a high performance, low power, low cost, capacitive sensor with an integrated twodimensional array of metal electrodes in the sensing array. Each metal electrode acts as one plate of a capacitor and the contacting finger acts as the second plate. A passivation layer on the device surface forms the dielectric between these two plates. Ridges and valleys on the finger yield varying capacitor values across the array, which is read to form an image of the fingerprint. Packages A block diagram of the MBF110 is shown in Figure 1. The MBF110 has an integrated 8-bit flash analog-to-digital converter The MBF110 is manufactured in standard CMOS technology and to digitize the output of the sensor array. The fingerprint image is is available in an 80-pin, VSPA 80/1 and LQFP 80/1. The 300 × transmitted on an 8-bit bi-directional bus interface compatible 300 sensor array has a 50 µm pitch and yields a 500-dpi image. The with most microprocessors. sensor surface is protected by a patented, ultra-hard, abrasion and For SETCUR resistor differences between the MBF110 see the Pin chemical resistant coating. Information table. Features • Non-optical solid-state device • 300 × 300 sensor array, 50 µm pitch • 1.5 cm × 1.5 cm sensor area • 500-dpi resolution • Operation from 3V to 5.5V • Ultra-hard protective coating y r a in im l e r P Applications • ATM • Smart cards 80-pin SOP (VSPA) 80-pin TSOP (LQFP) • Database and network access • Portable fingerprint acquisition • Access control (home, auto, office, etc.) • Cellular phone security access • Integrated 8-bit flash analog-to-digital converter • 8-bit microprocessor interface • Standard CMOS technology • Low power, less than 200 mW MBF110 Table of Contents Chip Operation .....................................................................................................................................................................1 Special Features ....................................................................................................................................................................2 MBF110 Pin Information for SOP 80/1 .................................................................................................................................. 2 MBF110 Connection Diagram ................................................................................................................................................3 Function Table ......................................................................................................................................................................4 Register Map ........................................................................................................................................................................4 Address Register Descriptions .................................................................................................................................................4 RAL (A3-A0 Address 0000) Write Only .............................................................................................................................4 Low Order Row Address Register ................................................................................................................................4 RAH (A3-A0 Address 0001) Write Only ............................................................................................................................5 High Order Row Address Register ...............................................................................................................................5 CAL (A3-A0 Address 0010) Read/Write.............................................................................................................................5 Low Order Column Address Register ...........................................................................................................................5 CAH (A3-A0 Address 0011) Write Only .............................................................................................................................6 High Order Column Address Register ..........................................................................................................................6 DTR (A3-A0 Address 0100) Write Only .............................................................................................................................6 Discharge Time Register ............................................................................................................................................6 DCR (A3-A0 Address 0101) Write Only .............................................................................................................................7 Discharge Current Register........................................................................................................................................7 RSR (A3-A0 Address 0110) Write Only ..............................................................................................................................7 Reserved..................................................................................................................................................................7 Row Capture and A/D Conversion Timing .................................................................................................................................8 A/D Converter ......................................................................................................................................................................8 Specifications ........................................................................................................................................................................8 Absolute Maximum Ratings ....................................................................................................................................................8 Operating Range ...................................................................................................................................................................8 DC Electrical Characteristics ..................................................................................................................................................8 Power Supply Characteristics, (VDD = 5.5V, fOSC = 40 MHz Standard Temperature Range)..................................................................................................9 Power Supply Characteristics, (VDD = 3.6V, Commercial Temperature Range, fOSC = 20 MHz ) ............................................................................................9 Read Cycle Timing at VDD = 3.0V, Standard Temperature Range................................................................................................10 Write Cycle Timing at VDD = 3.0V, Standard Temperature Range...............................................................................................11 Power Up and Initialization..................................................................................................................................................12 Image Capture ....................................................................................................................................................................13 y r a in im l e r P Fujitsu Fujitsu Microelectronics, -1 Microelectronics, Inc. Inc. Solid-State Fingerprint Sensor MBF110 – PFW1, SOP (VSPA) – 80 pin Package .................................................................................................................. 14 MBF110 – PFW, TSOP (LQFP) – 80 pin Package .................................................................................................................. 15 MBF110 Solder Pad Layout................................................................................................................................................. 16 Manufacturing Considerations.............................................................................................................................................. 17 Array Pixel Specifications .................................................................................................................................................... 17 MBF110 Ordering Information ............................................................................................................................................ 18 y r a in im l e r P 0 Fujitsu Microelectronics, Inc. Fujitsu Microelectronics, Inc. MBF110 SETCUR DCR RAH 300 x 300 Sensor Arrays A [3:0] RAL CE1 CE2 RD SELECT LOGIC CAH MUX CAL Temperature Sensor WR 8 Bit A/D D[7:0] DATA BUS BUFFER TEST XTAL1 XTAL2 ENCLK OSCILLATOR Chip Operation The sensor array is composed of 300 rows and 300 columns of sensor plates. Associated with each column are two sample-and-hold circuits. A fingerprint image is sensed or captured one row at a time. This“row capture”occurs in two phases. In the first phase, the sensor plates of the selected row are pre-charged to the VDD voltage. During this pre-charge period, an internal signal enables the first set of sample-and-hold circuits to store the pre-charged plate voltages of the row. In the second phase, the row of sensor plates is discharged with a current source. The rate at which a cell is discharged is proportional to the“discharge current.”After a period of time (referred to as the “discharge time”), an internal signal enables the second set of sample-and-hold circuits to store the final plate voltages. The difference between the pre-charged and discharged plate voltages is a y r a in im l e r P RSR DTR CONTROL LOGIC CLK OUT Resistance Sensor RSENSE CLK Figure 1. MBF110 Block Diagram measure of the capacitance of a sensor cell. After the row capture, the cells within the row are ready to be digitized. The sensitivity of the chip is adjusted by changing the discharge current and discharge time. The nominal value of the current source is controlled by an external resistor connected between the SETCUR pin and ground. The current source is controlled from the Discharge Current Register (DCR). The discharge time is controlled by the Discharge Time Register (DTR). The sensor array is a row-oriented device. Images are read out one row at a time. The High-Order Row Address Register (RAH) and the Low-Order Row Address Register (RAL) must be programmed to select a row to be captured. Writing to RAL initiates a row capture. The capture time is a function of the external clock and the DTR. After the discharge cycle, the outputs of the row elements will be stored in analog sample and hold circuits. Fujitsu Microelectronics, Inc. 1 Solid-State Fingerprint Sensor After the row capture is completed, the High-Order Column Address Register (CAH) and Low-Order Column Address Register (CAL) must be programmed to select an element within the captured row to be digitized. Writing to CAL causes the analog-to-digital (A/D) converter to digitize the difference between the outputs of the two sample-and-holds of the selected column cell. The output of the A/D converter is accessed by reading the CAL register. Rows can be accessed in any order; however, the selected row must be captured before the column cells are read. The column cells within a row can be accessed in any order. Special Features There are two programmable open-drain outputs that can be used for driving LEDs. The CLKOUT pin can be enabled to output a square-wave clock of the same frequency as the oscillator clock. CLKOUT can be used to drive external circuitry. When ENCLK is high, the clock signal is present at the CLKOUT pin. When ENCLK is low or unconnected, the CLKOUT output is held low. MBF110 Pin Information for SOP (VSPA) 80/1 Pin Number 34 35 36 37 38 39 40 17 18 19 21 22 24 25 26 27 32 31 15 Pin Name A3 A2 A1 A0 CE1 CE2 RD WR D7 D6 D5 D4 D3 D2 D1 D0 CLKOUT ENCLK LED1 Output Input Open-drain Output Open-drain Output Set Discharge Current Input Reserved pin Digital Power Supply Analog Power Supply Must be left disconnected. Place an external resistor R1 (200K – 680K ohms) between this pin and ground. Typical: FPS110, R1 = 680K; FPS110B, R1 = 200K; FPS110E, R1 = 200K LED driver This pin can be used to drive an LED. Clock Output Enable Clock Output This pin outputs the oscillator clock frequency when ENCLK is high. A high on this pin enables the CLKOUT pin. A low on this pin holds CLKOUT low. ENCLK has an internal pull-down resistor. Bi-directional Input Type Description Notes y r a in im l e r P Address Inputs Chip Enable, Active Low Chip Enable, Active High Read Enable, Active Low Write Enable, Active Low Data Bus Address signals connected to these pins select a register to read from or write to during data transfer. When CE1 is low and CE2 is high, the chip is selected. When CE1 is low and CE2 is high, the chip is selected. This pin must be low while WR is high and the chip selected in order to read a register on the chip. This pin must be low while the chip is selected to write to a register on the chip. Inputs when WR is low and chip is selected. Outputs when RD is low, WR is high, and chip is selected. 14 3 2 13 20, 33 1 2 LED2 SETCUR N/A TEST VDD VDDA Power Fujitsu Microelectronics, Inc. MBF110 MBF110 Pin Information for SOP (VSPA) 80/1 (Continued) Pin Number 16, 23, 28 4, 5 29 Pin Name VSS VSSA XTAL1 Type Ground (Center) Input Description Digital ground Analog ground Input to the On-Chip Oscillator Output of the On-Chip Oscillator Connected to Package Top Plate To use the internal oscillator connect a crystal circuit to this pin. If an external oscillator is used, its output is connected to this pin. XTAL1 is the clock source for internal timing. To use the internal oscillator connect a crystal circuit to this pin. If an external oscillator is used, leave XTAL2 unconnected. These pins should connect to chassis ground. Not connected. Notes 30 41-80 2, 6-12 XTAL2 GNDSHLD N/A Output Shield Ground N/A MBF110 Connection Diagram VDDA Reserved SETCUR VSSA VSSA Unconnected Unconnected Unconnected Unconnected Unconnected Unconnected Unconnected TEST LED2 LED1 VSS WRD7 D6 VDD D5 D4 VSS D3 D2 D1 D0 VSS XTAL1 XTAL2 ENCLK CLKOUT VDD A3 A2 A1 A0 CE1CE2 RD1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 y r a in im l e r P 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD GNDSHLD Fujitsu Microelectronics, Inc. 3 Solid-State Fingerprint Sensor Function Table CE1 H X L L L CE2 X L H H H RD X X H L H WR X X H H L Mode De-selected De-selected Standby Read Write Data Lines High-Z High-Z High-Z Data Out Data In Register Map A3 0 0 0 0 0 0 0 A2 0 0 0 0 1 1 1 A1 0 0 1 1 0 0 1 A0 0 1 0 1 0 1 0 Access Write Write Read/Write Write Write Write Write Register RAL RAH CAL CAH DTR Description Low Order Row Address Register High Order Row Address Register Low Order Column Address Register High Order Column Address Register Discharge Time Register Discharge Current Register Reserved Address Register Descriptions Refer to Row Capture and A/D Conversion Timing on page 9 to calculate row capture and A/D conversion times. RAL (A3-A0 Address 0000) Write Only MSB BIT7 RA7 BIT6 RA6 BIT5 RA5 y r a in im l e r P DCR RSR BIT4 RA4 BIT3 RA3 BIT2 RA2 Function Low Order Row Address Register This register and bit 0 of RAH form the 9-bit Row Address Register that selects the row to be captured. The 9-bit Row Address Register selects a row address from 0 through 299. Writing the RAL starts a row capture. Only RAL has to be written if RAH doesn’t change, otherwise RAH has to be written before RAL. LSB BIT1 RA1 BIT0 RA0 Bit Number [7:0] Bit Name RA[7:0] Low eight bits of Row Address Register. 4 Fujitsu Microelectronics, Inc. MBF110 RAH (A3-A0 Address 0001) Write Only High Order Row Address Register Bit 0 of this register and RAL form the 9-bit Row Address Register that selects the row to be converted. The L1 and L2 bits control two open-drain outputs that can be used to drive LEDs. MSB BIT7 L1 BIT6 L2 BIT5 – BIT4 – BIT3 – BIT2 – BIT1 – BIT0 RA8 LSB Bit Number 7 6 [5:1] 0 Bit Name L1 L2 – RA8 Function L1=0, LED1 output low L1=1, LED1 output high-Z CAL (A3-A0 Address 0010) Read/Write Low Order Column Address Register CAL is a read/write register. Writing to this address writes to the low-order 8 bits of the 9-bit Column Address Register. The 9-bit Column Address Register selects a column from 0 through 299. Writing to CAL causes the analog-to-digital (A/D) converter to MSB BIT7 CA7 BIT6 CA6 y r a in im l e r P L2=0, LED 2 output low L2=1, LED 2 output high-Z Reserved, write 0 to these bits. MSB of Row Address BIT5 CA5 BIT4 CA4 BIT3 CA3 BIT2 CA2 Function (WRITE) Low eight bits of Column Address Register. (READ) Output of A/D converter. begin digitizing its input. The input of the A/D converter is selected by bits 7 and 6 of the CAH register. The user should wait until the row capture is completed before writing to the CAL. Reading from this address returns the output of the A/D converter. After writing to CAL, the user should wait until A/D conversion completes before reading the A/D converter. LSB BIT1 CA1 BIT0 CA0 Bit Number [7:0] Bit Name CA[7:0] Fujitsu Microelectronics, Inc. 5 Solid-State Fingerprint Sensor CAH (A3-A0 Address 0011) Write Only High Order Column Address Register Bit 0 of this register and CAL form the 9-bit Column Address Register that selects a cell from the current row for digitizing. The user should wait until the row capture is completed before writing to CAH. MSB BIT7 R BIT6 T BIT5 – BIT4 – BIT3 – BIT2 – BIT1 – BIT0 CA8 LSB Bit Number [7:1] 0 Bit Name – CA8 Function Reserved, write 0 to these bits. MSB of Column Address Register DTR (A3-A0 Address 0100) Write Only Discharge Time Register MSB BIT7 PD BIT6 T6 BIT5 T5 Bit Number 7 Bit Name PD y r a in im l e r P BIT4 T4 BIT3 T3 BIT2 T2 Function Power down chip. PD=0, Chip in Normal Mode PD=1, Chip in Low Power Mode Discharge Time = T[6:0] * tOSC LSB BIT1 T1 BIT0 T0 [6:0] T[6:0] Selects the count to be loaded into the Discharge Timer. Discharge time is selected in increments of the oscillator period. Discharge Time is defined as the period between the sampling and holding of the pre-charged sensor cell to the sampling and holding of the discharging sensor cell. The Discharge Time can be calculated from the following equation: 6 Fujitsu Microelectronics, Inc. MBF110 DCR (A3-A0 Address 0101) Write Only Discharge Current Register MSB BIT7 F2 BIT6 F1 BIT5 TRST BIT4 DC4 BIT3 DC3 BIT2 DC2 BIT1 DC1 BIT0 DC0 LSB Bit Number Bit Name Function These two bits tell the chip the frequency of the external oscillator or crystal that is connected to the chip. F2 0 0 1 1 F1 0 1 0 1 XTAL Input 10-15 MHz 15-20 MHz 20-30 MHz 30-40 MHz [7:6] F2, F1 5 TRST [4:0] DC[4:0] RSR (A3-A0 Address 0110) Write Only Reserved MSB BIT7 – BIT6 – The user must initialize this resistor to zero. Bit Number [7:0] Bit Name – y r a in im l e r P TRST=0,Normal Timer Operation TRST=1,Halt and Clear Discharge Timer (doesn’t clear DTR) Selects the Discharge Current source value. BIT5 – BIT4 – BIT3 – BIT2 – Function Reserved. Write 0 to these bits. Timer Reset. Set this bit to halt and reset the Discharge Timer. Resetting the Discharge Timer is necessary to put the Discharge Timer in a known state after power-up or after returning to Normal mode from Low-power mode (See bit 7 of DTR). LSB BIT1 – BIT0 – Fujitsu Microelectronics, Inc. 7 Solid-State Fingerprint Sensor Row Capture and A/D Conversion Timing F2 0 0 1 1 F1 0 1 0 1 XTAL Input Range 10-15 MHz 15-20 MHz 20-30 MHz 30-40 MHz Row Capture Time in OSC Clock Periods 18+n 24+n 36+n 48+n A/D Conversion Time in OSC Clock Periods 13 15 23 30 NOTE: n is selected by bits T[6:0] of DTR. A/D Converter The integrated 8-bit flash A/D converter is a buffered device. Each write to CAL causes: 1) the result of the previous conversion to be latched and made readable at CAL, and 2) the A/D converter to start digitizing its current input. Consequently, it takes 301 writes to CAL in order to digitize the 300 cells of a row. Specifications* *All specifications in this document are preliminary and subject to change. Operating Range Symbol VDD VDDA Digital Supply Voltage Analog Supply Voltage Parameter Standard Temperature Range fOSC Oscillator Frequency VDD = 5.0V VDD = 3.0V DC Electrical Characteristics Symbol VOH VOL VOH VOL VIH VIL VIL ILI ILO Parameter Output High Voltage Output Low Voltage Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Input Low Voltage Input Leakage Current Output Leakage Current y r a in im l e r P • Storage Temperature: Min +3.0 +3.0 0 10 10 Test Conditions Min 2.4 – 2.4 – 2.0 VDD = 4.5V VDD = 3.00 GND ≤ Vin ≤ 5.5V GND ≤ Vout ≤ 5.5V -0.5 -0.5 -5.0 -5.0 VDD = 4.5V, IOH = -4 mA VDD = 4.5V, IOL = 8 mA VDD = 3.0V, IOH = -2 mA VDD = 3.0V, IOL = 4 mA Absolute Maximum Ratings -65° to +150° C • DC Voltage Applied to any Pins: -0.5 V to +7.0 V Max +5.5 +5.5 60 40 20 Unit V V °C MHz MHz Max – 0.4 0.4 VDD 0.8 0.6 5.0 5.0 Unit V V V V V V V µA µA 8 Fujitsu Microelectronics, Inc. MBF110 Power Supply Characteristics Symbol IDD1 IDD2 IDD3 IDD4 IDD5 IDD6 Digital Supply Current Parameter (VDD = 5.5V, fOSC=40 MHz Standard Temperature Range) Typ Test Conditions LP STD 100 20 10 20 20 30