1N4148

1N4148 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diodes. ♦ This diode is also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation 1N4148W, the MiniMELF case with the type designation LL4148, and the SOT23 case with the type designation IMBD4148. max. .150 (3.8) max. ∅.020 (0.52) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR V RM I0 IFSM Ptot Tj TS 500 5001) 175 –65 to +175 mA mW °C °C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) 4/98 1N4148 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Capacitance at VF = VR = 0 V Voltage Rise when Switching ON tested with 50 mA Pulses tp = 0.1 µs, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. – Typ. – Max. 1 Unit V VF IR IR IR Ctot Vfr – – – – – – – – – – 25 5 50 4 2.5 nA µA µA pF V trr – – 4 ns RthJA ηv – 0.45 – – 3501) – K/W – Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES 1N4148 RATINGS AND CHARACTERISTIC CURVES 1N4148