1N4148
Small Signal Diodes
DO-35
min. 1.083 (27.5)
FEATURES ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diodes. ♦ This diode is also available in other
max. ∅.079 (2.0)
Cathode Mark
min. 1.083 (27.5)
case styles including: the SOD-123 case with the type designation 1N4148W, the MiniMELF case with the type designation LL4148, and the SOT23 case with the type designation IMBD4148.
max. .150 (3.8)
max. ∅.020 (0.52)
MECHANICAL DATA
Case: DO-35 Glass Case Weight: approx. 0.13 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
Value 75 100 1501)
Unit V V mA
VR V RM I0
IFSM Ptot Tj TS
500 5001) 175 –65 to +175
mA mW °C °C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
4/98
1N4148
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Capacitance at VF = VR = 0 V Voltage Rise when Switching ON tested with 50 mA Pulses tp = 0.1 µs, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
1)
Min. –
Typ. –
Max. 1
Unit V
VF
IR IR IR Ctot Vfr
– – – – –
– – – – –
25 5 50 4 2.5
nA µA µA pF V
trr
–
–
4
ns
RthJA ηv
– 0.45
– –
3501) –
K/W –
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
Rectification Efficiency Measurement Circuit
RATINGS AND CHARACTERISTIC CURVES 1N4148
RATINGS AND CHARACTERISTIC CURVES 1N4148
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