1N4150

1N4150 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ Silicon Epitaxial Planar Diode ♦ For general purpose and switching. max. ∅.079 (2.0) max. .150 (3.8) ♦ This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4150W and the MiniMELF case with the type designation LL4150. Cathode Mark min. 1.083 (27.5) max. ∅.020 (0.52) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Peak Reverse Voltage Maximum Average Rectified Current Maximum Power Dissipation at Tamb = 25 °C Maximum Junction Temperature Maximum Forward Voltage Drop at IF = 200 mA Maximum Reverse Current at VR = 50 V Max. Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF V RM I0 Ptot Tj VF IR trr Value 50 200 500 200 1.0 100 4.0 Unit V mA mW °C V nA ns 4/98