1N4150W

1N4150W SMALL SIGNAL DIODES FEATURES SOD-123 .022 (0.55) ¨ Silicon Epitaxial Planar Diode ¨ For general purpose and switching. ¨ This diode is also available in other case styles including the DO-35 case with the type designation 1N4150 and the MiniMELF case with the type designation LL4150. max. .006 (0.15) Cathode Mark .152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55) Top View max. .004 (0.1) max. .053 (1.35) .067 (1.70) .055 (1.40) MECHANICAL DATA Case: SOD-123 Plastic Case Weight: approx. 0.01 g min. .010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Peak Reverse Voltage Maximum Average Rectified Current Maximum Power Dissipation at Tamb = 25¡C Maximum Forward Voltage Drop at IF = 200 mA Maximum Reverse Current at VR = 50 V Maximum Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF Maximum Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that electrodes are kept at ambient temperature VRM IO Ptot VF IR Trr Tj TS 50 200 410 (1) V mA mW V nA ns ¡C ¡C 1.0 100 4.0 150 Ð65 to +150 1/4/99