1N4151

1N4151 SMALL SIGNAL DIODES FEATURES DO-35 min. 1.083 (27.5) ¨ Silicon Epitaxial Planar Diode ¨ Fast switching diode. ¨ This diode is also available in other case styles including the SOD-123 case with the type designation 1N4151W and the Mini-MELF case with the type designation LL4151. max. .150 (3.8) max. ÆŸ.079 (2.0) Cathode Mark min. 1.083 (27.5) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g max. ÆŸ.020 (0.52) Dimensions in inches and (millimeters) Dimensions in inches and (millimeters) MAXIMUM RATINGS Ratings at 25¡C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 ¡C and f ³ 50 Hz Surge Forward Current at t < 1s and Tj = 25¡C Power Dissipation at Tamb = 25¡C Junction Temperature Storage Temperature Range VR VRM 50 75 150(1) Volts Volts IO mA IFSM Ptot Tj TS 500 500(1) 175 Ð 65 to +175 mA mW ¡C ¡C NOTES: (1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1/4/99 1N4151 ELECTRICAL CHARACTERISTICS Ratings at 25 ¡C ambient temperature unless otherwise specified SYMBOL MIN. TYP. MAX. UNIT Forward Voltage at IF = 50 mA Leakage Current at VR = 50 V at VR = 50 V, Tj = 150 ¡C Reverse Breakdown Voltage Tested with 5mA pulses Capacitance at VF = VR = 0 V Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 W Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHZ, VRF = 2 V VF Ð Ð 1.0 Volts IR IR V(BR)R Ctot Ð Ð 75 Ð Ð Ð Ð Ð 50 50 Ð 2 nA mA Volts pF trr trr RQJA hv Ð Ð Ð 0.45 Ð Ð Ð Ð 4 2 350(1) Ð ns ns ¡C/W Ð NOTES: (1) Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTICS CURVES 1N4151 RATINGS AND CHARACTERISTICS CURVES 1N4151