1N4151W

1N4151W SMALL SIGNAL DIODES FEATURES SOD-123 .022 (0.55) ¨ Silicon Epitaxial Planar Diode ¨ Fast switching diode. ¨ This diode is also available in other case styles including the SOD-123 case with the type designation 1N4151W and the Mini-MELF case with the type designation LL4151. Cathode Mark .152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55) Top View MECHANICAL DATA max. .004 (0.1) max. .053 (1.35) max. .006 (0.15) .067 (1.70) .055 (1.40) Case: SOD-123 Plastic Case Weight: approx. 0.01 g min. .010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 ¡C and f ³ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 ¡C Power Dissipation at Tamb = 25 ¡C Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that electrodes are kept at ambient temperature VR VRM 50 75 V V IO IFSM Ptot Tj TS 150 (1) 500 410 (1) 150 Ð 65 to +150 mA mA mW ¡C ¡C 1/4/99 1N4151W ELECTRICAL CHARACTERISTICS Ratings at 25 ¡C ambient temperature unless otherwise specified SYMBOL MIN. TYP. MAX. UNIT Forward Voltage at IF = 50 mA Leakage Current at VR = 50 V at VR = 20 V, Tj = 150¡C Reverse Breakdown Voltage Tested with 5mA pulses Capacitance at VF = VR = 0 V Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 W Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V NOTES: (1) Valid provided that electrodes are kept at ambient temperature (SOD-123) VF IR IR V(BR)R Ctot Ð Ð Ð 75 Ð Ð Ð Ð Ð Ð 1.0 50 50 Ð 2 V nA mA V pF trr trr RthJA hv Ð Ð Ð 0.45 Ð Ð Ð Ð 4 2 450 (1) Ð ns ns ¡C/W Ð Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTICS CURVES 1N4151W RATINGS AND CHARACTERISTICS CURVES 1N4151W