2N3904

NEW PRODUCT NEW PRODUCT NEW PRODUCT 2N3904 SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP transistor 2N3906 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT3904. C max. Æ 0.022 (0.55) 0.098 (2.5) E MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g B Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25¡C at TC = 25¡C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that leads are kept at ambient temperature. VCBO VCEO VEBO IC Ptot 60 40 6.0 200 625 1.5 V V V mA mW W ¡C/W ¡C ¡C RqJA Tj TS 250 (1) 150 Ð 65 to +150 1/5/99 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Collector-Emitter Cutoff Current VEB = 3 V, VCE = 30 V Emitter-Base Cutoff Current VEB = 3 V, VCE = 30 V DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Gain-Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V, f = 100 kHz Emitter-Base Capacitance at VEB = 0.5 V, f = 100 kHz V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEV IEBV hFE hFE hFE hFE hFE hie hre fT CCBO CEBO 60 40 6 Ð Ð Ð Ð Ð Ð 40 70 100 60 30 1 0.5 á 10Ð4 300 Ð Ð Ð Ð Ð 0.2 0.3 0.85 0.95 50 50 Ð Ð 300 Ð Ð 10 8 á 10Ð4 Ð 4 8 V V V V V V V nA nA Ð Ð Ð Ð Ð kW Ð MHz pF pF 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz Delay Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Rise Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Storage Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA Fall Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA hfe 100 400 Ð hoe 1 40 mS NF Ð 5 dB td Ð 35 ns tr Ð 35 ns ts Ð 200 ns tf Ð 50 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors