2N4401

ADVANCED INFORMATION ADVANCED INFORMATION 2N4401 SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP transistor 2N4403 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT4401 max. Æ 0.022 (0.55) 0.098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation at TA=25°C Derate above 25°C Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot 60 40 6.0 600 625 5.0 1.5 12 200 83.3 150 Ð55 to +150 Volts Volts Volts mA mW mW/°C W mW/°C °C/W ¡C/W ¡C ¡C Ptot RQJA RQJC Tj TS 2/17/99 2N4401 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector Cutoff Current at VEB = 0.4 V, VCE = 35 V Base Cutoff Current at VEB = 0.4 V, VCE = 35 V DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 2 V, IC = 0.1 mA 1 mA 10 mA 150 mA(1) 500 mA(1) V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEX IBEV 60 40 6.0 Ð Ð 0.75 Ð Ð Ð Ð Ð Ð 0.40 0.75 0.95 1.20 100 100 Volts Volts Volts Volts Volts Volts Volts nA nA hFE hFE hFE hFE hFE hie hre fT CCBO CEBO 20 40 80 100 40 1.0 0.1 ¥ 10-4 250 Ð Ð Ð Ð Ð 300 Ð 15 8 ¥ 10-4 Ð 6.5 30 Ð Ð Ð Ð Ð kW Ð MHz pF pF Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V, IE=0, f=1.0 MHZ Emitter-Base Capacitance at VEB = 0.5 V, IC=0, f=1.0 MHZ NOTES (1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2% 2N4401 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz Delay Time (see fig. 1) at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V Rise Time (see fig. 1) at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V Storage Time (see fig. 2) at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA Fall Time (see fig. 2) at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA hfe hoe td tr ts tf 40 1.0 Ð Ð Ð Ð 500 30 15 20 225 30 Ð mS ns ns ns ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME FIGURE 2 - TURN-OFF TIME 1.0 to 100 ms, DUTY CYCLE Å 2% +16 V 0 -2 V < 2 ns 1kW +30V 200W +16 V 0 C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope -14 V 1.0 to 100 ms, DUTY CYCLE Å 2% +30V 200W 1kW < 20 ns -4 V C S* < 10 pF