2N4403

ADVANCED INFORMATION ADVANCED INFORMATION 2N4403 SMALL SIGNAL TRANSISTORS (PNP) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the NPN transistor 2N4401 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT4403. max. Æ 0.022 (0.55) 0.098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation at TA = 25¡C Derate above 25¡C Power Dissipation at TC = 25¡C Derate above 25¡C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range ÐVCBO ÐVCEO ÐVEBO ÐIC Ptot 40 40 5.0 600 625 5.0 1.5 12 200 83.3 150 Ð 55 to +150 Volts Volts Volts mA mW mW/¡C W mW/¡C ¡C/W ¡C/W ¡C ¡C Ptot RQJA RQJC Tj TS 2/17/99 2N4403 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Base Breakdown Voltage at ÐIC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at ÐIC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at ÐIE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage(1) at ÐIC = 150 mA, ÐIB = 15 mA at ÐIC = 500 mA, ÐIB = 50 mA Base-Emitter Saturation Voltage(1) at ÐIC = 150 mA, ÐIB = 15 mA at ÐIC = 500 mA, ÐIB = 50 mA Collector Cutoff Current at ÐVEB = 0.4 V, ÐVCE = 35 V Base Cutoff Current at ÐVEB = 0.4 V, ÐVCE = 35 V DC Current Gain at ÐVCE = 1 V, ÐIC = 0.1 mA at ÐVCE = 1 V, ÐIC = 1 mA at ÐVCE = 1 V, ÐIC = 10 mA at ÐVCE = 2 V, ÐIC = 150 mA(1) at ÐVCE = 2 V, ÐIC = 500 mA(1) Input Impedance at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHZ Voltage Feedback Ratio at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHZ Current Gain-Bandwidth Product at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHZ Collector-Base Capacitance at ÐVCB = 10 V, IE=0, f = 1.0 MHZ Emitter-Base Capacitance at ÐVEB = 0.5 V, IC=0, f = 1.0 MHZ NOTES (1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2% ÐV(BR)CBO 40 Ð Volts ÐV(BR)CEO ÐV(BR)EBO 40 5.0 Ð Ð Volts Volts ÐVCEsat ÐVCEsat Ð Ð 0.40 0.75 Volts Volts ÐVBEsat ÐVBEsat ÐICEX ÐIBEV 0.75 Ð Ð Ð 0.95 1.30 100 100 Volts Volts nA nA hFE hFE hFE hFE hFE hie 30 60 100 100 20 1.5 Ð4 Ð Ð Ð 300 Ð 15 Ð4 Ð Ð Ð Ð Ð kW Ð MHz pF pF hre fT CCB CEB 0.1 á 10 200 Ð Ð 8 á 10 Ð 8.5 30 2N4403 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Output Admittance at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Delay Time (see Fig. 1) at ÐIB1 = 15 mA, ÐIC = 150 mA, ÐVCC = 30V, ÐVEB = 2V Rise Time (see Fig. 1) at ÐIB1 = 15 mA, ÐIC = 150 mA, ÐVCC = 30V, ÐVEB = 2V Storage Time (see Fig. 2) at IB1 = ÐIB2 = 15 mA, ÐIC = 150 mA, ÐVCC = 30V Fall Time (see Fig. 2) at IB1 = ÐIB2 = 15 mA, ÐIC = 150 mA, ÐVCC = 30V, hfe 60 500 Ð mS ns hoe 1.0 100 td Ð 15 tr Ð 20 ns ts Ð 225 ns tf Ð 30 ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME FIGURE 2 - TURN-OFF TIME -30V < 2 ns +2 V 0 1kW -16 V 1.0 to 100ms Duty Cycle - 2% +4 V Scope rise time - 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF -16 V 1.0 to 100ms Duty Cycle - 2% +4 V 200W +14 V 0 1kW < 20 ns -30V 200W C S* < 10 pF