BA782S

BA782S, BA783S Bandswitching Diodes SOD-323 FEATURES ♦ Silicon Epitaxial Planar Diode Switches .012 (0.3) ♦ For electronic bandswitching in radio and .106 (2.7) .091 (2.3) .079 (2.0) .063 (1.6) Cathode Mark Top View max. .049 (1.25) max. .006 (0.15) .059 (1.5) .043 (1.1) max. .004 (0.1) TV tuners in the frequency range of 50 … 1000 MHz.The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. with the type designations BA782 and BA783. ♦ These diodes are also available in SOD-123 case min. .010 (0.25) MECHANICAL DATA Dimensions in inches and (millimeters) Case: SOD-323 Plastic Package Weight: approx. 0.004 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Forward Continuous Current at Tamb = 25 °C Junction Temperature Storage Temperature Range VR IF Tj TS Value 35 100 125 –55 to +125 Unit V mA °C °C 4/98 258 BA782S, BA783S ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 100 mA Leakage Current at VR = 20 V Dynamic Forward Resistance at f = 50 to 1000 MHz, IF = 3 mA at f = 50 to 1000 MHz, IF = 10 mA Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz Series Inductance across Case BA782S BA783S BA782S BA783S VF IR rf rf rf rf Ctot Ctot Ctot LS Min. – – – – – – – – – – Typ. – – – – – – – – – 2.5 Max. 1 50 0.7 1.2 0.5 0.9 1.5 1.25 1.2 – Unit V nA Ω Ω Ω Ω pF pF pF BA782S BA783S nH RATINGS AND CHARACTERISTIC CURVES BA782S, BA783S 259