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BA783

BA783

  • 厂商:

    GE

  • 封装:

  • 描述:

    BA783 - Bandswitching Diodes - General Semiconductor

  • 数据手册
  • 价格&库存
BA783 数据手册
BA782, BA783 Bandswitching Diodes SOD-123 .022 (0.55) FEATURES ♦ Silicon Epitaxial Planar Diode Switches ♦ For electronic bandswitching in radio and TV tuners in the frequency range of 50 … 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. with the type designations BA782S and BA783S. Cathode Mark .152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55) Top View max. .006 (0.15) max. .004 (0.1) max. .053 (1.35) .067 (1.70) .055 (1.40) ♦ These diodes are also available in SOD-323 case MECHANICAL DATA Case: SOD-123 Plastic Case Weight: approx. 0.01 g min. .010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Forward Continuous Current at Tamb = 25 °C Junction Temperature Storage Temperature Range VR IF Tj TS Value 35 100 125 –55 to +125 Unit V mA °C °C 4/98 256 BA782, BA783 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 100 mA Leakage Current at VR = 20 V Dynamic Forward Resistance at f = 50 to 1000 MHz, IF = 3 mA at f = 50 to 1000 MHz, IF = 10 mA Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz Series Inductance across Case BA782 BA783 BA782 BA783 VF IR rf rf rf rf Ctot Ctot Ctot LS Min. – – – – – – – – – – Typ. – – – – – – – – – 2.5 Max. 1 50 0.7 1.2 0.5 0.9 1.5 1.25 1.2 – Unit V nA Ω Ω Ω Ω pF pF pF BA782 BA783 nH RATINGS AND CHARACTERISTIC CURVES BA782, BA783 257
BA783 价格&库存

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