BAS16

BAS16 Small Signal Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ Silicon Epitaxial Planar Diode Top View .056 (1.43) .052 (1.33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) Marking A6 3 Top View 1 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 250 2 1 0.5 3501) 150 –65 to +1501) Unit V V mA A A A mW °C °C VR V RM IF IFSM IFSM IFSM Ptot Tj TS Device on fiberglass substrate, see layout (SOT-23). 4/98 BAS16 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Leakage Current at VR = 25 V, Tj = 150 °C at VR = 75 V at VR = 75 V, Tj = 150 °C Capacitance at VR = 0; f = 1 MHz Reverse Recovery Time from IF = 10 mA to IR = 10 mA IR = 1 mA, RL = 100 Ω Thermal Resistance Junction to Ambient Air 1) Min. – – – – – – – – – Typ. – – – – – – – – – Max. 715 855 1000 1250 30 1 50 2 6 Unit mV mV mV mV µA µA µA pF ns VF VF VF VF IR IR IR Ctot trr BAS16 RthJA – – 4301) K/W K/W Device on fiberglass substrate, see layout (SOT-23). .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)