BAS4

BAS40 THRU BAS40-06 Schottky Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 BAS40 Marking: 43 3 BAS40-04 Marking: 44 3 Top View 1 2 1 2 BAS40-05 Marking: 45 BAS40-06 Marking: 46 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Power Dissipation1) at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 40 2001) 6001) 2001) 150 –55 to +150 Unit V mA mA mW °C °C VRRM IF IFSM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BAS40 THRU BAS40-06 ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage Tested with 10 µA Pulses Leakage Current Pulse Test tp < 300 µs at VR = 30 V Forward Voltage Pulse Test tp < 300 µs at IF = 1 mA at IF = 40 mA Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA Thermal Resistance Junction to Ambient Air 1) Min. 40 – Typ. – 20 Max. – 100 Unit V nA V(BR)R IR VF VF Ctot trr RthJA – – – – – – – 4.0 – – 380 1000 5 5 4301) mV mV pF ns K/W Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)