BAS85

BAS85 Schottky Diodes MiniMELF FEATURES ♦ For general purpose applications ♦ This diode features low turn-on voltage. ∅ .063 (1.6) .055 (1.4) Cathode Mark The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. designation BAT85. ♦ This diode is also available in a DO-35 case with type .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Continuous Reverse Voltage Forward Continuous Current at Tamb = 25 °C Peak Forward Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Power Dissipation at Tamb = 65 °C Junction Temperature Storage Temperature Range 1) Value 30 2001) 3001) 6001) 2001) 125 –55 to +150 Unit V mA mA mA mW °C °C VR IF IFM IFSM Ptot Tj TS Valid provided that electrodes are kept at ambient temperature. 4/98 BAS85 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 10 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA Leakage Current at VR = 25 V Capacitance at VR = 1 V, f = 1 MHz Thermal Resistance Junction to Ambient Air Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA 1) Min. 30 Typ. – Max. – Unit V V(BR)R VF VF VF VF VF IR Ctot RthJA trr – – – – – – – – – – – – 0.5 – 0.2 – – – 0.24 0.32 0.4 – 0.8 2 10 4301) 5 V V V V V µA pF K/W ns Valid provided that electrodes are kept at ambient temperature.