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BAT42

BAT42

  • 厂商:

    GE

  • 封装:

  • 描述:

    BAT42 - Schottky Diodes - General Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT42 数据手册
BAT42, BAT43 Schottky Diodes DO-35 min. 1.083 (27.5) FEATURES ♦ For general purpose applications ♦ These diodes feature very low turnmax. ∅.079 (2.0) max. .150 (3.8) on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with the type designations BAT42W to BAT43W and in the MiniMELF case with type designations LL42 to LL43. Cathode Mark min. 1.083 (27.5) ♦ These diodes are also available in the SOD-123 max. ∅.020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, δ < 0.5, Tamb = 25 °C Surge Forward Current at tp < 10 ms, Tamb = 25 °C Power Dissipation1) at Tamb = 65 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 30 2001) 5001) 41) 2001) 125 –65 to +125 –65 to +150 Unit V mA mA A mW °C °C °C V RRM IF IFRM IFSM Ptot Tj Tamb TS Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature 4/98 BAT42, BAT43 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 200 mA at IF = 10 mA at IF = 50 mA at IF = 2 mA at IF = 15mA Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 25 V at VR = 25 V, Tj = 100 °C Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, RL = 100 Ω Detection Efficiency at RL = 15 KΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V Thermal Resistance Junction to Ambient Air 1) Min. 30 Typ. – Max. – Unit V V(BR)R BAT42 BAT42 BAT43 BAT43 VF VF VF VF VF – – – 0.26 – – – – – – 1 0.4 0.65 0.33 0.45 V V V V V IR IR Ctot trr – – – – – – 7 – 0.5 100 – 5 µA µA pF ns ηv 80 – – % RthJA – – 0.31) K/mW Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature
BAT42
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:文档详细列出了该微控制器的所有引脚及其功能,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:包括工作电压、工作频率、内存大小等关键参数。

5. 功能详解:详细介绍了微控制器的各个功能模块,如GPIO、ADC、定时器等。

6. 应用信息:提供了该微控制器在不同领域的应用案例,如工业控制、医疗设备等。

7. 封装信息:介绍了该微控制器的封装类型,包括LQFP48封装。
BAT42 价格&库存

很抱歉,暂时无法提供与“BAT42”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BAT42W
  •  国内价格
  • 20+0.11341
  • 200+0.10641
  • 500+0.09941
  • 1000+0.09241
  • 3000+0.08891
  • 6000+0.084

库存:873

BAT42W-7-F
  •  国内价格
  • 1+0.1386
  • 30+0.13365
  • 100+0.1287
  • 500+0.1188
  • 1000+0.11385
  • 2000+0.11088

库存:166

BAT42WS-7-F
  •  国内价格
  • 1+0.32901
  • 10+0.2991
  • 30+0.27916
  • 100+0.24925
  • 500+0.23529
  • 1000+0.22532

库存:1898