BC327

BC327, BC328 Small Signal Transistors (PNP) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. ♦ These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. max. ∅ .022 (0.55) .098 (2.5) C B E ♦ On special request, these transistors are also manufactured in the pin configuration TO-18. MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 50 30 45 25 5 800 1 100 6251) 150 –65 to +150 Unit V V V V V mA A mA mW °C °C BC327 BC328 BC327 BC328 –VCES –VCES –VCEO –VCEO –VEBO –IC –ICM –IB Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 4/98 BC327, BC328 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol DC Current Gain at –VCE = 1 V, –IC = 100 mA Current Gain Group-16 -25 -40 at –VCE = 1 V, –IC = 300 mA Current Gain Group-16 -25 -40 Thermal Resistance Junction to Ambient Air Collector-Emitter Cutoff Current at –VCE = 45 V at –VCE = 25 V at –VCE = 45 V, Tamb = 125 °C at –VCE = 25 V, Tamb = 125 °C Collector-Emitter Breakdown Voltage at –IC = 10 mA BC327 BC328 BC327 BC328 BC327 BC328 Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE RthJA –ICES –ICES –ICES –ICES – V(BR)CEO – V(BR)CEO – V(BR)CES – V(BR)CES – V(BR)EBO –VCEsat –VBE fT CCBO 100 160 250 60 100 170 – – – – – 45 25 160 250 400 130 200 320 – 2 2 – – – – 250 400 630 – – – 2001) 100 100 10 10 – – – – – – – – K/W nA nA µA µA V V Collector-Emitter Breakdown Voltage at –IC = 0.1 mA BC327 BC328 50 30 – – – – V V Emitter-Base Breakdown Voltage at –IE = 0.1 mA Collector Saturation Voltage at –IC = 500 mA, –IB = 50 mA Base-Emitter Voltage at –VCE = 1 V, –IC = 300 mA Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 50 MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz 1) 5 – – – – – – – 100 12 – 0.7 1.2 – – V V V MHz pF Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328