BC808

BC807, BC808 Small Signal Transistors (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ PNP Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) for switching, AF driver and amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. 1 2 max. .004 (0.1) ♦ These transistors are subdivided into three groups -16, -25 and -40 according to their current gain. .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) ♦ As complementary types, the NPN transistors BC817 and BC818 are recommended. .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Type BC807-16 -25 -40 BC808-16 -25 -40 Marking 5A 5B 5C 5E 5F 5G Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 50 30 45 25 5 500 1000 200 1000 3101) 150 – 65 to +150 Unit V V V V V mA mA mA mA mW °C °C BC807 BC808 BC807 BC808 –VCES –VCES –VCEO –VCEO –VEBO –IC –ICM –IBM IEM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BC807, BC808 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol DC Current Gain at –VCE = 1 V, –IC = 100 mA Current Gain Group-16 -25 -40 -16 at –VCE = 1 V, –IC = 300 mA -25 -40 Thermal Resistance Junction Substrate Backside Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at –IC = 500 mA, –IB = 50 mA Base-Emitter Voltage at –VCE = 1 V, –IC = 300 mA Collector-Emitter Cutoff Current at –VCE = 45 V at –VCE = 25 V at –VCE = 25 V, Tj = 150 °C Emitter-Base Cutoff Current at –VEB = 4 V Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 50 MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz 1) Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE RthSB RthJA –VCEsat –VBE 100 160 250 60 100 170 – – – – – – – – – – – – – – 250 400 600 – – – 3201) 4501) 0.7 1.2 – – – – – – K/W K/W V V BC807 BC808 –ICES –ICES –ICES –IEBO fT CCBO – – – – – – – – – 100 12 100 100 5 100 – nA nA µA nA MHz pF Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BC807, BC808 RATINGS AND CHARACTERISTIC CURVES BC807, BC808 RATINGS AND CHARACTERISTIC CURVES BC807, BC808