BC817

BC817, BC818 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) for switching, AF driver and amplifier applications. in thick- and thin-film circuits. ♦ Especially suited for automatic insertion ♦ These transistors are subdivided into three groups -16, -25 and -40 according to their current gain. .045 (1.15) .037 (0.95) 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) ♦ As complementary types, the PNP transistors BC807 and BC808 are recommended. .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Type BC817-16 -25 -40 BC818-16 -25 -40 Marking 6A 6B 6C 6E 6F 6G Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 50 30 45 25 5 800 1000 200 1000 3101) 150 – 65 to +150 Unit V V V V V mA mA mA mA mW °C °C BC817 BC818 BC817 BC818 VCES VCES VCEO VCEO VEBO IC I CM IBM –IEM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BC817 THRU BC818 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group-16 -25 -40 -16 at VCE = 1 V, IC = 300 mA -25 -40 Thermal Resistance Junction Substrate Backside Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at VCE = 1 V, IC = 300 mA Collector-Emitter Cutoff Current at VCE = 45 V at VCE = 25 V at VCE = 25 V, Tj = 150 °C Emitter-Base Cutoff Current at VEB = 4 V Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz 1) Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE RthSB RthJA VCEsat VBE 100 160 250 60 100 170 – – – – – – – – – – – – – – 250 400 600 – – – 3201) 4501) 0.7 1.2 – – – – – – K/W K/W V V BC817 BC818 ICES ICES ICES IEBO fT CCBO – – – – – – – – – – 100 12 100 100 5 100 – nA nA µA nA MHz pF Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BC817, BC818 RATINGS AND CHARACTERISTIC CURVES BC817, BC818 RATINGS AND CHARACTERISTIC CURVES BC817, BC818