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BC847

BC847

  • 厂商:

    GE

  • 封装:

  • 描述:

    BC847 - Small Signal Transistors (NPN) - General Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
BC847 数据手册
BC846 THRU BC849 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) .045 (1.15) .037 (0.95) groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Type BC846A B BC847A B C Marking 1A 1B 1E 1F 1G Type BC848A B C BC849B C Marking 1J 1K 1L 2B 2C Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage BC846 BC847 BC848, BC849 BC846 BC847 BC848, BC849 BC846 BC847 BC848, BC849 BC846, BC847 BC848, BC849 VCBO VCBO VCBO VCES VCES VCES VCEO VCEO VCEO VEBO VEBO IC ICM IBM –IEM Ptot Tj TS Value 80 50 30 80 50 30 65 45 30 6 5 100 200 200 200 3101) 150 –65 to +150 Unit V V V V V V V V V V V mA mA mA mA mW °C °C Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Device on fiberglass substrate, see layout 5/98 BC846 THRU BC849 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol h-Parameters at VCE = 5 V, IC = 2 mA, f = 1 kHz, Small Signal Current Gain Current Gain Group A B C Current Gain Group A Input Impedance B C Current Gain Group A Output Admittance B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at VCE = 5 V, IC = 10 µA Current Gain Group A B C at VCE = 5 V, IC = 2 mA Current Gain Group A B C Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Collector-Emitter Cutoff Current BC846 at VCE = 80 V BC847 at VCE = 50 V BC848, BC849 at VCE = 30 V BC846 at VCE = 80 V, Tj = 125 °C BC847 at VCE = 50 V, Tj = 125 °C BC848, BC849 at VCE = 30 V, Tj = 125 °C Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz 1) Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre – – – 1.6 3.2 6 – – – – – – 220 330 600 2.7 4.5 8.7 18 30 60 1.5 · 10–4 2 · 10–4 3 · 10–4 – – – 4.5 8.5 15 30 60 110 – – – – – – kΩ kΩ kΩ µS µS µS – – – hFE hFE hFE hFE hFE hFE RthSB RthJA VCEsat VCEsat VBEsat VBEsat VBE VBE ICES ICES ICES ICES ICES ICES fT – – – 110 200 420 – – – – – – 580 – – – – – – – – 90 150 270 180 290 520 – – 90 200 700 900 660 – 0.2 0.2 0.2 – – – 300 – – – 220 450 800 3201) 4501) 250 600 – – 700 720 15 15 15 4 4 4 – – – – – – – K/W K/W mV mV mV mV mV mV nA nA nA µA µA µA MHz Device on fiberglass substrate, see layout BC846 THRU BC849 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Capacitance at VCB = 10 V, f = 1 MHz Emitter-Base Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz BC846, BC847, BC848 BC849 at VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 30…15000 Hz CCBO CEBO Min. – – Typ. 3.5 9 Max. 6 – Unit pF pF F F F – – – 2 1.2 1.4 10 4 4 dB dB dB BC849 .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) 66 RATINGS AND CHARACTERISTIC CURVES BC846 THRU BC849 RATINGS AND CHARACTERISTIC CURVES BC846 THRU BC849 68 RATINGS AND CHARACTERISTIC CURVES BC846 THRU BC849
BC847
### 物料型号 - BC846:NPN硅外延平面晶体管,适用于自动插入厚膜和薄膜电路。 - BC847:与BC846类似,但提供A、B、C三个电流增益分组。 - BC848:与BC847类似,提供A、B、C三个电流增益分组。 - BC849:低噪声型号,提供B、C两个电流增益分组。

### 器件简介 这些晶体管是专为开关和音频放大应用设计的NPN硅外延平面晶体管,特别适用于自动插入厚膜和薄膜电路。

### 引脚分配 - 引脚配置:1=基极,2=发射极,3=集电极。

### 参数特性 - 最大额定值: - 集电极-基极电压(VCBO):BC846为80V,BC847为50V,BC848和BC849为30V。 - 集电极-发射极电压(VCEO):BC846为65V,BC847为45V,BC848和BC849为30V。 - 发射极-基极电压(VEBO):6V。 - 集电极电流(IC):100mA。 - 峰值集电极电流(ICM):200mA。 - 峰值基极电流(IBM):200mA。 - 峰值发射极电流(IEM):200mA。 - 功率耗散(Ptot):310mW(TSB=50°C)。 - 结温(Tj):150°C。

### 功能详解 这些晶体管根据电流增益分为A、B、C三个组。BC846提供A和B组,BC847和BC848提供所有三个组,BC849是低噪声型号,提供B和C组。作为互补型号,推荐使用PNP晶体管BC856至BC859。

### 应用信息 适用于开关和音频放大应用,特别适合自动插入厚膜和薄膜电路。

### 封装信息 - 封装:SOT-23塑料封装,重量约为0.008克。
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