BF423

BF421, BF423 Small Signal Transistors (PNP) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ PNP Silicon Epitaxial Transistors especially suited for application in class-B video output stages of TV receivers and monitors. ♦ As complementary types, the NPN tran- sistors BF420 and BF422 are recommended. max. ∅ .022 (0.55) .098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 300 250 250 300 5 50 100 8301) 150 –65 to +150 Unit V V V V V mA mA mW °C °C BF421 BF423 BF423 BF421 –VCBO –VCBO –VCEO –VCER –VEBO –IC –ICM Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 4/98 BF421, BF423 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Breakdown Voltage at –IC = 100 µA, IE = 0 Collector-Emitter Breakdown Voltage at –IC = 10 mA, IB = 0 Collector-Emitter Breakdown Voltage at RBE = 2.7 kΩ, at –IC = 10 mA Emitter-Base Breakdown Voltage at –IE = 100 µA, IC = 0 Collector-Base Cutoff Current at –VCB = 200 V, IE = 0 Collector-Emitter Cutoff Current at RBE = 2.7 kΩ, –VCE = 250 V at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C Collector Saturation Voltage at –IC = 30 mA, –IB = 5 mA DC Current Gain at –VCE = 20 V, –IC = 25 mA Gain-Bandwidth Product at –VCE = 10 V, –IC = 10 mA Feedback Capacitance at –VCE = 30 V, –IC = 0, f = 1 MHz Thermal Resistance Junction to Ambient Air 1) Min. 300 250 250 300 5 – Typ. – – – – – – Max. – – – – – 10 Unit V V V V V nA BF421 BF423 BF423 BF421 –V(BR)CBO –V(BR)CBO –V(BR)CEO –V(BR)CER –V(BR)EBO –ICBO –ICER –ICER –VCEsat hFE fT Cre RthJA – 50 60 – – – – – – – 50 10 0.8 – – 1.6 1501) nA µA V – MHz pF K/W Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.