BF822

BF820, BF822 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) especially suited for application in class-B video output stages of TV receivers and monitors. ♦ As complementary types, the PNP transistors BF821 and BF823 are recommended. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code BF820 = 1V BF822 = 1X Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 300 250 250 300 5 50 100 3001) 150 –65 to +150 Unit V V V V V mA mA mW °C °C BF820 BF822 BF822 BF820 VCBO VCBO VCEO VCER VEBO IC ICM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BF820, BF822 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Breakdown Voltage at IC = 100 µA, IB = 0 Collector-Emitter Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at RBE = 2.7 kΩ, IC = 10 mA Emitter-Base Breakdown Voltage at IE = 100 µA, IB = 0 Collector-Base Cutoff Current at VCB = 200 V, IE = 0 Collector-Emitter Cutoff Current at RBE = 2.7 kΩ, VCE = 250 V at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C Collector Saturation Voltage at IC = 30 mA, IB = 5 mA DC Current Gain at VCE = 20 V, IC = 25 mA Gain-Bandwidth Product at VCE = 10 V, IC = 10 mA Feedback Capacitance at VCE = 30 V, IC = 0, f = 1 MHz Thermal Resistance Junction to Ambient Air 1) Min. 300 250 250 300 5 – Typ. – – – – – – Max. – – – – – 10 Unit V V V V V nA BF820 BF822 BF822 BF820 V(BR)CBO V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICBO ICER ICER VCEsat hFE fT Cre RthJA – 50 60 – – – – – – – 50 10 0.6 – – 1.6 4301) nA µA V – MHz pF K/W Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)