BF823

BF821, BF823 Small Signal Transistors (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ PNP Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) especially suited for application in classB video output stages of TV receivers and monitors. ♦ As complementary types, the NPN transistors BF820 and BF822 are recommended. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code BF821 = 1W BF823 = 1Y Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 300 250 250 300 5 50 100 3001) 150 –65 to +150 Unit V V V V V mA mA mW °C °C BF821 BF823 BF823 BF821 –VCBO –VCBO –VCEO –VCER –VEBO –IC –ICM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BF821, BF823 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Breakdown Voltage at –IC = 100 µA, IE = 0 Collector-Emitter Breakdown Voltage at –IC = 10 mA, IB = 0 Collector-Emitter Breakdown Voltage at RBE = 2.7 kΩ, –IC = 10 mA Emitter-Base Breakdown Voltage at –IE = 100 µA, IC = 0 Collector-Base Cutoff Current at –VCB = 200 V, IE = 0 Collector-Emitter Cutoff Current at RBE = 2.7 kΩ, –VCE = 250 V at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C Collector Saturation Voltage at –IC = 30 mA, –IB = 5 mA DC Current Gain at –VCE = 20 V, –IC = 25 mA Gain-Bandwidth Product at –VCE = 10 V, –IC = 10 mA Feedback Capacitance at –VCE = 30 V, –IC = 0, f = 1 MHz Thermal Resistance Junction to Ambient Air 1) Min. 300 250 250 300 5 – Typ. – – – – – – Max. – – – – – 10 Unit V V V V V nA BF821 BF823 BF823 BF821 –V(BR)CBO –V(BR)CBO –V(BR)CEO –V(BR)CER –V(BR)EBO –ICBO –ICER –ICER –VCEsat hFE fT Cre RthJA – 50 60 – – – – – – – 50 10 0.8 – – 1.6 4301) nA µA V – MHz pF K/W Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)