BS828

BS828 DMOS Transistors (N-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) High breakdown voltage High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S28 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 240 240 ± 20 230 0.3101) 150 –65 to +150 Unit V V V mA W °C °C VDSS VDGS VGS ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 °C IF VF Value 0.3 0.85 Unit A V 4/98 BS828 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 Gate-Body Leakage Current at VGS = 15 V, VDS = 0 Drain Cutoff Current at VDS = 130 V, VGS = 0 at VDS = 70 V, VGS = 0.2 V Gate-Source Threshold Voltage at VGS = VDS, ID = 1 mA Drain-Source ON Resistance at VGS = 2.8 V, ID = 100 mA Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Capacitances at VDS = 20 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at VGS = 10 V, VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time 1) Min. 240 – Typ. 250 – Max. – 10 Unit V nA V(BR)DSS IGSS IDSS IDSX VGS(th) RDS(ON) RthSB RthJA – – – – – – – – 1.5 5.5 – – 1 25 2.5 8 3201) 4501) µA µA V Ω K/W K/W Ciss Coss Crss – – – 80 20 5 – – – pF pF pF ton toff – – 5 50 – – ns ns Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BS828 RATINGS AND CHARACTERISTIC CURVES BS828 RATINGS AND CHARACTERISTIC CURVES BS828