BS829

BS829 DMOS Transistors (P-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .045 (1.15) .037 (0.95) Top View .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S29 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at TSB = 50 °C Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 400 400 ±20 70 3501) 150 –65 to +150 Unit V V V mA mW °C °C –VDSS –VDGS VGS – ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.) at VGS = 0 V, IF = 350 mA, Tj = 25 °C 4/98 Value 350 1.0 Unit mA V IF VF BS829 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V Drain Cutoff Current at –VDS = 400 V, VGS = 0 V Gate-Source Threshold Voltage at VGS = VDS, –ID = 250 µA Drain-Source ON Resistance at VGS = 5 V, –ID = 100 mA Capacitance at –VDS = 25 V, VGS = 0 V, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time Thermal Resistance Junction to Ambient Air 1) Min. 400 – – – 1 – Typ. 430 – – – 1.5 40 Max. – 100 100 500 2.5 50 Unit V nA nA µA V Ω –V(BR)DSS –IGSSF –IGSSR –IDSS –VGS(th) RDS(on) CiSS COSS CrSS – – – 200 30 10 – – – pF pF pF ton toff RthJA – – – 10 50 – – – 3201) ns ns K/W Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)