BS850

BS850 DMOS Transistors (P-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Top View .056 (1.43) .052 (1.33) 2 max. .004 (0.1) .007 (0.175) .005 (0.125) 1 .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S50 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 60 60 ± 20 250 0.3101) 150 –65 to +150 Unit V V V mA W °C °C –VDSS –VDGS VGS –ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.12 A, Tj = 25 °C IF VF Value 0.3 0.85 Unit A V 4/98 BS850 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 Gate Threshold Voltage at VGS = VDS, –ID = 1 mA Gate-Body Leakage Current at –VGS = 15 V, VDS = 0 Drain Cutoff Current at –VDS = 25 V, VGS = 0 Drain-Source ON Resistance at –VGS = 10 V, –ID = 200 mA Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Forward Transconductance at –VDS = 10 V, –ID = 200 mA, f = 1 MHz Input Capacitance at –VDS = 10 V, VGS = 0, f = 1 MHz Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time 1) Min. 60 1.0 – – – – – – – Typ. 90 2 – – 3.5 – – 200 60 Max. – 3.0 10 0.5 5.0 3201) 4501) – – Unit V V nA µA Ω K/W K/W mS pF –V(BR)DSS VGS(th) –IGSS –IDSS RDS(ON) RthSB RthJA gm Ciss ton toff – – 5 25 – – ns ns Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BS850 RATINGS AND CHARACTERISTIC CURVES BS850 RATINGS AND CHARACTERISTIC CURVES BS850