BS870

BS870 DMOS Transistors (N-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Top View .056 (1.43) .052 (1.33) 2 max. .004 (0.1) .007 (0.175) .005 (0.125) 1 .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S70 .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 60 60 ± 20 250 0.3101) 150 –65 to +150 Unit V V V mA W °C °C VDSS VDGS VGS ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 °C 4/98 Value 0.3 0.85 Unit A V IF VF BS870 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 Gate Threshold Voltage at VGS = VDS , ID = 1 mA Gate-Body Leakage Current at VGS = 15 V, VDS = 0 Drain Cutoff Current at VDS = 25 V, VGS = 0 Drain-Source ON Resistance at VGS = 10 V, ID = 200 mA Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Forward Transconductance at VDS = 10 V, ID = 200 mA, f = 1 MHz Input Capacitance at VDS = 10 V, VGS = 0, f = 1 MHz Switching Times at VGS = 10 V, VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time 1) Min. 60 1.0 – – – – – – – Typ. 80 2 – – 3.5 – – 200 30 Max. – 3.0 10 0.5 5.0 3201) 4501) – – Unit V V nA µA Ω K/W K/W mS pF V(BR)DSS VGS(th) IGSS IDSS RDS(ON) RthSB RthJA gm Ciss ton toff – – 5 25 – – ns ns Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BS870 Drain-source current versus gate threshold voltage mA 3 10 BS870 VDS = VGS T = 25 °C A 10 IDS 10 2 1 10 -1 10 -2 10 -3 0 1 2 3 4 VGS(TO) 5V RATINGS AND CHARACTERISTIC CURVES BS870 RATINGS AND CHARACTERISTIC CURVES BS870