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ES1B

ES1B

  • 厂商:

    GE

  • 封装:

  • 描述:

    ES1B - SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER - General Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
ES1B 数据手册
ES1A THRU ES1D SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts DO-214AC Forward Current - 1.0 Ampere ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package ♦ Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diodes ♦ Ultrafast recovery times for high efficiency ♦ Low forward voltage ♦ Low leakage current ♦ Glass passivated chip junction ♦ High temperature soldering guaranteed: 250°C/10 seconds on terminals FEATURES 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.090 (2.29) 0.078 (1.98) MECHANICAL DATA 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93) Dimensions in inches and (millimeters) Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.002 ounces, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS ES1A ES1B ES1C ES1D UNITS Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=120°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 0.6A at 1.0A Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time (NOTE 1) Maximum reverse recovery time (NOTE 2) EA VRRM VRMS VDC I(AV) IFSM 50 35 50 EB 100 70 100 1.0 30.0 0.865 0.920 5.0 100 15.0 25.0 35.0 10.0 25.0 7.0 85.0 35.0 EC 150 105 150 ED 200 140 200 Volts Volts Volts Amp Amps VF IR trr Volts µA ns ns nC pF °C/W °C TA=25°C TA=100°C TA=25°C TA=100°C TA=25°C TA=100°C trr Qrr CJ RΘJA RΘJL TJ, TSTG Maximum stored charge (NOTE 2) Typical junction capacitance (NOTE 3) Maximum thermal resistance (NOTE 4) Operating and storage temperature range -55 to +150 NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/µs, Irr =10% IRM for measurement of trr (3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts (4) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area 4/98 RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1D FIG. 1 - MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) at TL=120°C RESISTIVE OR INDUCTIVE LOAD 0.2 x 0.2” (5.0 x 5.0mm) COPPER PAD AREAS 1.0 0.8 0.6 0.4 0.2 0 80 25 20 15 10 5.0 0 1 10 NUMBER OF CYCLES AT 60 HZ FIG. 4 - TYPICAL REVERSE LEAKAGE CHARACTERISTICS 90 100 110 120 130 140 150 100 LEAD TEMPERATURE, °C FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1,000 50 INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 100 TJ=125°C INSTANTANEOUS FORWARD CURRENT, AMPERES 10 TJ=25°C PULSE WIDTH=300µs 1% DUTY CYCLE 10 TJ=85°C 1 1 0.1 TJ=25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG. 5 - TYPICAL THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, °C/W FIG. 5 - TYPICAL JUNCTION CAPACITANCE 14 JUNCTION CAPACITANCE, pF 100 12 10 8.0 6.0 4.0 2.0 0 0.1 1 TJ=25°C f=1.0 MHZ Vsig=50mVp-p MOUNTED on 0.2 x 0.2”(5 x 7mm) COPPER PAD AREAS 10 10 100 1 0.1 1 10 100 REVERSE VOLTAGE, VOLTS t, PULSE DURATION, SEC
ES1B
### 物料型号 - 型号:ES1A至ES1D

### 器件简介 - 描述:ES1A至ES1D系列是表面安装超快速高效塑料整流器,反向电压范围为50至200伏特,正向电流为1.0安培。这些器件适用于表面安装应用,低轮廓封装,非常适合用于非常高频率的开关电源、逆变器和作为自由轮流通道。

### 引脚分配 - 极性:通过色带表示阴极端。

### 参数特性 - 最大重复峰值反向电压(VRRM):ES1A为50V,ES1B为100V,ES1C为150V,ES1D为200V。 - 最大RMS电压(VRMS):ES1A为35V,ES1B为70V,ES1C为105V,ES1D为140V。 - 最大直流阻断电压(VDc):与VRRM相同。 - 最大平均正向整流电流(I(AV)):ES1C为1.0A。 - 峰值正向浪涌电流(IFSM):ES1B为30.0A。 - 最大瞬时正向电压(VF):ES1B为0.865V和0.920V。 - 最大直流反向电流(IR):ES1B为5.0mA。 - 最大反向恢复时间(tr):ES1C为15.0ns。 - 最大反向恢复时间(trr):ES1C为25.0ns和35.0ns。 - 最大存储电荷(Qrr):ES1C为10.0nC和25.0nC。 - 典型结电容(CJ):ES1C为7.0pF。

### 功能详解 - 应用:非常适用于高效率的高频开关电源、逆变器和作为自由轮流通道。 - 特性:超快速恢复时间、低正向电压、低漏电流、玻璃钝化芯片连接、耐高温焊接保证:250°C/10秒在端子上。

### 应用信息 - 应用场景:高频开关电源、逆变器和自由轮流通道。

### 封装信息 - 封装类型:DO-214AC,JEDEC标准。 - 重量:0.002盎司,0.064克。

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