FESB8GT

FESB8GT

  • 厂商:

    GE

  • 封装:

  • 描述:

    FESB8GT - FAST EFFICIENT PLASTIC RECTIFIER - General Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
FESB8GT 数据手册
NEW PRODUCT NEW PRODUCT NEW PRODUCT FESB8AT THRU FESB8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts TO-263AB Forward Current - 8.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low leakage, high voltage ♦ High surge current capability ♦ Superfast recovery time, for high efficiency ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed 0.380 (9.65) 0.420 (10.67) 0.245 (6.22) MIN K 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.320 (8.13) 0.360 (9.14) 1 K 2 0.575 (14.60) 0.625 (15.88) 0.047 (1.19) 0.055 (1.40) SEATING PLATE -T- 0.090 (2.29) 0.110 (2.79) 0.018 (0.46) 0.025 (0.64) 0.027 (0.686) 0.037 (0.940) 0.080 (2.03) 0.110 (2.79) MECHANICAL DATA Case: JEDEC TO-263AB molded plastic body Terminals: Plated lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08 ounce, 2.24 grams 0.095 (2.41) 0.100 (2.54) PIN 1 K - HEATSINK PIN 2 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS FESB 8AT FESB 8BT FESB 8CT FESB 8DT FESB 8FT FESB 8GT FESB 8HT FESB 8JT UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC=100°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 8.0A Maximum DC reverse current at rated DC blocking voltage at TC=25°C TC=100°C VRRM VRMS VDC I(AV) 50 35 50 100 70 100 150 105 150 200 140 200 8.0 300 210 300 400 280 400 500 350 500 600 Volts 420 Volts 600 Volts Amps IFSM VF IR trr CJ RΘJC TJ, TSTG 35.0 0.95 125.0 1.3 10.0 500.0 50.0 85.0 3.0 -65 to +150 50.0 1.5 Amps Volts µA ns pF °C/W °C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to case mounted on heatsink 4/98 RATINGS AND CHARACTERISTIC CURVES FESB8AT THRU FESB8JT FIG. 1 - MAXIMUM FORWARD CURRENT DERATING CURVES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 10 AVERAGE FORWARD RECTIFIED CURRENT, AMPERES HEATSINK, CASE TEMPERATURE, TC 150 PEAK FORWARD SURGE CURRENT, AMPERES RESISTIVE OR INDUCTIVE LOAD 8.0 125 100 75 50 25 0 1 TC=100°C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 6.0 4.0 FREE AIR, AMBIENT, TEMPERATURE TA 2.0 0 0 50 100 150 10 NUMBER OF CYCLES AT 60 HZ 100 AMBIENT TEMPERATURE, °C FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE LEAKAGE CHARACTERISTICS 40 INSTANTANEOUS FORWARD CURRENT, AMPERES 100 TJ=125°C 10 TJ=25°C INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 10 25 TJ=1 °C 1.0 1 TJ= 100 °C PULSE WIDTH=300µs 1% DUTY CYCLE 50 - 200V 300 - 400V 500 - 600V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 TJ= 25° C 50-400V 500-600V FIG. 5 - TYPICAL JUNCTION CAPACITANCE 0.01 1,000 JUNCTION CAPACITANCE, pF TJ=25°C f=1.0 MHz Vsig=50mVp-p 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, % 100 50 - 400V 500 - 600V 10 0.1 1 10 100 REVERSE VOLTAGE, VOLTS
FESB8GT
### 物料型号 - FESB8AT - FESB8BT - FESB8CT - FESB8DT - FESB8FT - FESB8GT - FESB8HT - FESB8JT

### 器件简介 这些是快速高效的塑料整流器,反向电压范围从50到600伏特,正向电流为8.0安培。它们采用TO-263AB封装,具有以下特点: - 塑料封装符合UL94V-0可燃性等级 - 玻璃钝化芯片结构 - 低漏电、高电压 - 高浪涌电流能力 - 超快恢复时间,提高效率 - 符合CECC 802/回流焊接标准

### 引脚分配 根据JEDEC TO-263AB塑封体,引脚为镀铅可焊,符合MIL-STD-750, Method 2026标准。

### 参数特性 - 最大重复峰值反向电压(VRRM):50至600伏特不等 - 最大RMS电压(VRMS):35至420伏特不等 - 最大直流阻断电压(VDC):50至600伏特不等 - 最大平均正向整流电流(I(AV)):8.0安培 - 峰值正向浪涌电流(IFSM):125.0安培 - 最大瞬时正向电压(VF):0.95至1.5伏特不等 - 最大直流反向电流(IR):10.0毫安至500.0毫安不等 - 最大反向恢复时间(trr):35.0纳秒至50.0纳秒不等 - 典型结电容(CJ):85.0皮法至50.0皮法不等 - 典型热阻(ReJC):3.0摄氏度/瓦特 - 工作结与存储温度范围(TJ,TSTG):-65至+150摄氏度

### 功能详解 这些肖特基整流器具有超快恢复时间和高效率,适用于需要高浪涌电流和低正向压降的应用。

### 应用信息 适用于需要高效率和高浪涌电流能力的整流应用,如电源、电机驱动等。

### 封装信息 采用JEDEC TO-263AB塑封体,重量为0.08盎司(2.24克),可任意位置安装。
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