GF4435

GF4435 P-Channel Enhancement-Mode MOSFET NCHT TRENFE GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 VDS –30V RDS(ON) 20mΩ ID –8.0A ® Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0 °– 8 ° 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit –30 Unit V ± 20 – 8.0 – 50 2.5 1.6 –55 to 150 50 A W °C °C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Note: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. 7/10/01 GF4435 P-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) J = 25°C unless otherwise noted) Symbol Test Condition VDS = VGS, ID = – 250µA VDS = 0V, VGS = ± 20V VDS = – 30V, VGS = 0V VDS ≥ –5V, VGS = –10V VGS = 0V, ID = – 250µA VGS = –10V, ID = –8.0A VGS = –4.5V, ID = –5.0A Min Typ Max Unit VGS(th) IGSS IDSS ID(on) BVDSS RDS(on) gfs –1.0 – – – 40 – 30 – – – – – – – – 15.3 25.3 22 – 3.0 V nA µA A V mΩ S ± 100 –1.0 – – 20 35 – Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDS = –15V, ID = –8.0A Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = –15V, VGS = –10V ID = –4.6A VDD = –15V, RL = 15Ω ID ≈ –1A, VGEN = –10V RG = 6Ω VGS = 0V VDS = – 15V f = 1.0MHZ – – – – – – – – – – 54 8.5 10.3 24 12 78 37 2520 490 335 60 – – 30 30 120 80 – – – pF ns nC IS VSD IS = –2.1A, VGS = 0V – – – – 0.75 – 2.1 –1.2 A V VDD ton toff tr 90% Switching Test Circuit VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT VGEN RG G DUT 10% 50% 50% S Input, VIN 10% PULSE WIDTH GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 50 A = 25°C unless otherwise noted) Fig. 1 – Output Characteristics 50 VGS = --10V 40 Fig. 2 – Transfer Characteristics VDS = --10V 40 --ID -- Drain-to-Source Current (A) --6.0V --5.0V -- ID -- Drain Current (A) --4.5V 30 30 --4.0V 20 20 TJ = 125°C 10 25°C --55°C --3.5V 10 --3V 0 0 1 2 3 4 5 0 1 2 3 4 5 6 --VDS -- Drain-to-Source Voltage (V) -- VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature 2.4 2.2 0.06 0.055 Fig. 4 – On-Resistance vs. Drain Current RDS(ON) -- On-Resistance (Ω) --VGS(th) -- Gate-to-Source Threshold Voltage (V) 0.05 0.045 0.04 VGS = --4.5V 0.035 0.03 0.025 0.02 0.015 VGS = --10V 2 ID = --250µA 1.8 1.6 1.4 1.2 0.01 --50 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 TJ -- Junction Temperature (°C) -- ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = --10V ID = --8.0A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.08 ID = -- 8.0A 0.07 10 Fig. 7 – Gate Charge -- VGS -- Gate-to-Source Voltage (V) VDS = --15V ID = --4.6A 8 RDS(ON) -- On-Resistance (Ω) 0.06 0.05 0.04 0.03 0.02 0.01 0 2 4 6 8 10 TJ = 25°C TJ = 125°C 6 4 2 0 0 10 20 30 40 50 60 -- VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance 3500 3000 f = 1MHz VGS = 0V 100 Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 2500 2000 1500 1000 Coss 500 0 0 5 10 15 20 25 30 Crss --IS -- Source Current (A) C -- Capacitance (pF) Ciss 10 1 TJ = 125°C 0.1 25°C --55°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 --VDS -- Drain-to-Source Voltage (V) --VSD -- Source-to-Drain Voltage (V) GF4435 P-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature 35 ID = --250 A Fig. 11 – Transient Thermal Impedance -- BVDSS -- Drain-to-Source Breakdown Voltage (V) 34 33 32 31 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0.01 100 Fig. 13 – Maximum Safe Operating Area 10 0µ s 1m ID -- Drain Current (A) 10 10 10 0m s ms RDS(ON) Limit 1 1s s 10s 0.1 VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.1 1 DC 10 100 VDS -- Drain-Source Voltage (V)